OLED-CELL制程及设备介绍

,2014,天马微电子股份有限公司,.All rights reserved,2014,天马微电子股份有限公司,.All rights reserved,*,单击此处编辑母版标题样式,OLED CELL制程及设备介绍,2014-08-4,目录,Contents,1,OLED CELL制程功能简介,2,OLED CELL工艺流程简介,3,CELL内各工艺制程及设备介绍,Gap sealing,偏光片贴附,CELL,测 试,Cell Aging,Cell 切 割,1/4 切 割,清 洗,检 查,磨 边,Array,CELL前,Cr 的 刻 蚀,ITO 的 刻 蚀,制 作 绝 缘 层,阴 极 隔 离 柱,OLED CELL制程功能简介,5.5G Array基板4分切割以便投入蒸镀,1/4中片切割成Panel,前制程&本制程不良检出,完成Aging/Gap seal/偏光片贴附后output to MOD,OLED CELL工艺流程简介,Array,OLED,TP/Cover iutput,LTPS Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED封装,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,【,1/4切割目的,】：利用,刀轮,，将5.5G 单板Glass(1300,1500mm,)切割成1/4中片(650,750mm,)，以便适用于OLED蒸镀封装设备。,LTPS,/Cover,Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀/封装,OLED CELL工艺流程及设备介绍,【,切割原理,】：,利用高硬度的聚合金刚石刀轮，在玻璃表面形成沿着刀轮行进方向，垂直于玻璃表面的纵向裂纹，从而使玻璃能沿切割方向断开。,以产生Median Crack为主,其它Crack越小越好。,LTPS,/Cover,Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀/封装,OLED CELL工艺流程及设备介绍,【,切割设备,】：,【,切割,品质要求,】：,切割尺寸精度、,切割,深度、玻璃强度。,【,切割工艺参数,】：,刀轮角度,、,切割压力,、,切割速度,、,刀轮下压量,等；,插孔,挡片,刀头,单体机,全自动,全自动,LTPS,/Cover,Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀/封装,砂轮,OLED CELL工艺流程及设备介绍,砂 轮,【,磨边目的,】：利用高速旋转的,砂轮,，将切割后Glass,倒角,，及边缘,磨边,，将不良（崩缺、裂纹、凸缘等）研磨掉，避免此类不良在后制程中导致破片。,LTPS,/Cover,Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀/封装,OLED CELL工艺流程及设备介绍,【,磨边设备,】：,【,磨边工艺参数,】：,研磨量、研磨角度；,【,磨边品质要求,】：,研磨精度,搬送单元,CCD Align单元,研磨砂轮单元,砂轮,Glass Cover,研磨平台单元,LTPS,/Cover,Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀/封装,OLED CELL工艺流程及设备介绍,毛 刷,2流体喷淋,纯水洗净,Air Knife风干,【,清洗目的,】：利用,毛刷,、,2流体喷淋,去离子水等冲洗干净Glass，并,风刀风干,，避免Particle污染后制程。,LTPS,/Cover,Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀/封装,OLED CELL工艺流程及设备介绍,OLED,【,检查目的,】：利用CCD Camera扫视Glass基板边缘，识别边缘缺陷（,崩缺、裂纹、凸缘等,）并拦截不良Glass。,LTPS,/Cover,Input,1/4切割,磨边(Grinding),清洗(Clean),外观检查,OLED蒸镀/封装,OLED CELL工艺流程及设备介绍,【,Cell切割目的,】：利用刀轮，将贴合后中片Glass切割成Cell。,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,【,OLED Cell切割设备,】：,切割-翻面-切割 机型,俯视图,上切割-下切割 机型,侧视图,上下同时切割 机型,侧视图,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,【,Cell Aging目的,】：通过,点亮,OLED产品并施加一定,电压,、,电流,、,温度,，持续一定,时间,，使OLED有机发光材料有效融合，,改善发光稳定性及显示寿命,。,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,【,Cell Aging设备,】：,Align System,Aging Chamber System,Unloading System,Blade,最小Pitch:85um,FPCB,最小Pitch:180um,Pogo Pin,最小Pitch:300um,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,【,一次VT目的,】：,不良检测,：利用测试治具点亮产品，在特定画面下检测筛选出显示不良品（不良主要为Array/OLED蒸镀阶段的点类/线类/mura类不良）；,Device监控,：点亮产品，测量亮度、对比度、色坐标、CIE等光学指标是否正常。,【,二次VT目的,】：利用测试治具点亮产品，在特定画面下检测筛选出显示不良品（不良主要为一次电测可能漏检的前制程不良以及偏光片类显示不良）。,亮度：XXXX,对比度：XXXX,CIE：XXXX,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,【,VT治具,】：,Number of signal output:42signals,Number of power output:10powers,Editing of signal width is 0.1us step.,Rising time of signal is under 100ns.,Maximum level of signal is-15V+15V.,Maximum power output level is-20V+20V.,Maximum current output 2,000mA.,PG,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,LED UV,LED UV,LED UV,喷 阀,【,Gap sealing目的,】：利用,喷阀,喷射,UV胶,至AMOLED边缘（Pad区边缘除外），使胶渗入基板与封装玻璃之间的缝隙。并,LED 线性UV侧照固化,，借以增强产品的粘合强度与,防水性,。,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,流片方向,OLED CELL工艺流程及设备介绍,【,Gap sealing设备,】：,Tray上料,喷涂封胶,UV固化,下料,撞针,UV1,UV3,UV2,喷阀,CCD,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,【,Gap sealing工艺参数,】：,点胶压力、点胶循环时间、点胶速度、UV固化时间；,【,Gap sealing品质要求,】,：,喷涂精度、溢胶高度、UV胶气泡等；,OLED CELL工艺流程及设备介绍,【,Polishing clean,目的,】：利用研磨装置、毛刷、2流体喷淋等手段洗净,毛 刷,2流体喷淋,纯水洗净,Air Knife风干,研磨带,研磨头旋转清洗,研磨带清洗,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,离 型 膜,偏光片本体,保 护 膜,表面附有胶粘剂,【,偏光片贴附目的,】：将偏光片剥离离型膜后贴附于AMOLED产品,出光侧玻璃表面,，使偏光片对OLED显示起到,防眩光和消光作用,。,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,Out,put,OLED CELL工艺流程及设备介绍,【,圆偏光片作用原理,】：对OLED显示起到防眩光和消光作用。,without films,with films,有外光入射,without films,with films,无,外光入射,OLED偏光片,/4 位相差板,Cell i,n,put,清洗覆膜,Cell切割,清洗(Clean),TP测试,Cell Aging,一次,VT,Gap Sealing,Peeling,Polishing clean,偏光板贴附,二次,VT,Pol Rework,Auto Clave,Cell,O