薄膜技术讲义

,按一下以編輯母片標題樣式,*,按一下以編輯母片,第二層,第三層,第四層,第五層,按一下以編輯母片標題樣式,按一下以編輯母片,第二層,第三層,第四層,第五層,*,(Sputter ),講師:蕭忠良,1,金屬濺鍍(,Sputter),1.物理氣相沈積,(Physical Vapor Deposition ),之濺鍍(,Sputter),1-1.原理:利用電漿(,Plasma),所產生的離,子，對靶材(,Target),的撞擊，使,電漿的氣相內具鍍物的粒子後,，產生沈積現象形成薄膜。,2,1-2.目的:在晶片(,wafer),上，濺鍍,Ti/W & Au,即,UBM(under barrier metal),層。,1-3.,UBM,層:,Ti/W 4500 & Au 1000 ,Wafer,Ti/W 500 ,TiW/N 3000 ,Ti/W 1000 ,Au 1000 ,3,1-4.,UBM,的功能性:,(1)附著(,A,dhesion),(2),屏障(,B,arrier),(3),導電(,C,onductive),1-5.,UBM,的重要性:,(1)附著不良導致:,UBM,層分離,(2)屏障不良導致:,Ti/W,層氧化、金擴散,與鋁形成合金,(3)導電不良導致:,Bump,缺陷或未生成,4,Sputter Process,1.,Dry etch(,移除,Al,氧化層,:6070 ),1-1.Ar bombard,1-2.RF-Etch,2.Sputter (Ion bombard),2-1.Dc Sputter,2-2.Magnetron Dc Sputter,2-3.RF Sputter,5,Sputter (Ion bombard),Plasma,+,+,+,+,+,+,+,+,+,+,+,+,+,+,High Voltage,+,Ar,Ar,+,+,positive,-,negative,Ar gas,Ti or Au,Target,e,-,Wafer,Ar,+,Ar,+,Ar,+,6,Dry Etch(Ar bombard),Plasma,+,+,+,+,+,+,+,+,+,+,+,+,+,+,High Voltage,+,Ar,Ar gas,Grid,+,Ar,Substrate,e,-,PBN,Ar,Ar,Ar,7,DC Etch For Non Conductive Material,Situation:All positive and negative will be bound.(no plasma,survive),8,RF Etch For Non Conductive Material,Situation:electron can move freely at chamber,(plasma survive),9,Self-bias For RF Supply,Situation:The substrate is always negative,Principle:Due to the electron have higher mobility,the number of electron hitting the substrate,is higher than the number of ions,+,Ar,+,Ar,+,Ar,+,Ar,10,Negative Potential on Substrate,Formula:V,a,/V,b,=(A,b,/A,a,),4,(plasma is positive slightly),Situation:The substrate is always negative,11,Magnetron Dc Sputter,目的:1.增加電子行徑距離(增加離子密度),2.使離子對靶的轟擊較均勻,原因:1.高真空環境可增加離子在暗區動,能與自由半徑，但離子密度與,Ar,利用率下降,2.增加靶材使用壽命,12,Presputter,不同濺鍍物污染靶材,濺鍍初期合金靶材的原子穩定度,Metal A,Metal B,沉積時間,13,Sputter Stress,Stress=,內應力+外應力+熱應力,內應力:外來雜質與本身缺陷,外應力:不同界面材質晶格差異,熱應力:與熱膨脹係數有關,Compressive(-),Tensile(+),14,Sputter Formula,轉移動能=4*,E,ion,M*m/(M+m),2,濺鍍產額=,*,E,ion,M*m/U,M,(M+m),2,R=Me*Ve/B*Q,15,