GOOD集成电路工艺和版图设计EDA讲座

单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,*,集成电路工艺和版图设计,概述,Jian FangIC Design Center, UESTC,1,IC常用术语,园片：硅片,芯片(Chip, Die)：,6,、8,：硅（园）片直径：1,25.4mm,6,150mm;,8,200mm;,12,300mm;,亚微米1m的设计规范,深亚微米 0,反型层 沟道,源（Source）S,漏（Drain）D,栅（Gate）G,栅氧化层厚度：,50埃1000埃（5nm100n,m）,V,T,阈值电压,电压控制,N沟MOS（NMOS）,P,型衬底，受主杂质；,栅上加正电压，表面吸引电子，反型，电子通道；,漏加正电压，电子从源区经,N,沟道到达漏区，器件开通,。,6,N衬底,p,+,p,+,漏,源,栅,栅氧化层,场氧化层,沟道,P沟MOS（PMOS）,G,D,S,V,T,V,GS,I,D,+,-,V,DS, 0,N,型衬底，施主杂质，电子导电；,栅上加负电压，表面吸引空穴，反型，空穴通道；,漏加负电压，空穴从源区经,P,沟道到达漏区，器件开通,。,7,CMOS,CMOS,：,Complementary Symmetry Metal Oxide Semiconductor,互补对称金属氧化物半导体特点：低功耗,V,SS,V,DD,V,o,V,i,CMOS倒相器,PMOS,NMOS,I/O,I/O,V,DD,V,SS,C,C,CMOS传输门,8,N-Si,P,+,P,+,n,+,n,+,P-阱,D,D,V,o,V,G,V,SS,S,S,V,DD,CMOS倒相器截面图,CMOS倒相器版图,9,pwell,active,poly,N+ implant,P+ implant,omicontact,metal,A NMOS Example,10,pwell,Pwell,Active,Poly,N+ implant,P+ implant,Omicontact,Metal,11,Ntype Si,SiO,2,光刻胶,光,MASK Pwell,12,Ntype Si,SiO,2,光刻胶,光刻胶,MASK Pwell,13,Ntype Si,SiO,2,光刻胶,光刻胶,SiO,2,14,Ntype Si,SiO,2,SiO,2,Pwell,15,pwell,active,Pwell,Active,Poly,N+ implant,P+ implant,Omicontact,Metal,16,Ntype Si,SiO,2,Pwell,SiO,2,光刻胶,MASK active,MASK Active,Si,3,N,4,17,Ntype Si,SiO,2,Pwell,SiO,2,光刻胶,光刻胶,MASK active,MASK Active,Si,3,N,4,18,Ntype Si,SiO,2,Pwell,SiO,2,光刻胶,光刻胶,Si,3,N,4,19,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,Si,3,N,4,20,Ntype Si,SiO,2,Pwell,场氧,场氧,场氧,Pwell,21,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,poly,22,active,pwell,poly,Pwell,Active,Poly,N+ implant,P+ implant,Omicontact,Metal,23,Ntype Si,SiO,2,Pwell,SiO,2,MASK poly,场氧,场氧,场氧,Pwell,poly,光刻胶,24,Ntype Si,SiO,2,Pwell,SiO,2,MASK poly,场氧,场氧,场氧,Pwell,光刻胶,poly,25,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,poly,26,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,poly,27,active,pwell,poly,N+ implant,Pwell,Active,Poly,N+ implant,P+ implant,Omicontact,Metal,28,Ntype Si,SiO,2,Pwell,SiO,2,MASK N+,场氧,场氧,场氧,Pwell,poly,光刻胶,29,Ntype Si,SiO,2,Pwell,SiO,2,场氧,场氧,场氧,Pwell,光刻胶,poly,N+ implant,S/D,30,active,pwell,poly,P+ implant,Pwell,Active,Poly,N+ implant,P+ implant,Omicontact,Metal,31,Ntype Si,SiO,2,Pwell,SiO,2,MASK N+,场氧,场氧,场氧,Pwell,poly,光刻胶,光,S/D,32,