论文冶金法太阳能级多晶硅提纯技术现状与质量分析 31P

单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,Status quo of Metallurgical Purified Solar Grade Poly-Silicon and its Quality Analysis,冶金法太阳能级多晶硅提纯技术现状与质量分析,ProPower Inc.,目 录,Brief Introduction of Metallurgical Purification of SOG,冶金法简介,Evolution of Metallurgical Purification of SOG,冶金法的进展,Impurities and its affect to the SOG,太阳能级多晶硅的杂质及其对材料性能的影响,Quality Stability Analysis of Metallurgical Purified SOG,冶金法多晶硅的质量稳定性分析,Technology for Poly-Crystallin Silicon Production多晶硅提纯技术分类,Chemical Routine 化学法,Chemical changes happen to Si in purification process提纯过程中硅发生反响,Physical RoutineMetallurgical Routine)物理法(冶金法,No chemical change happens to Si in purification process 提纯过程中硅不发生反响,Chemical Routine 化学法,Chemical changes happen to Si in purification process 硅发生了化学反响,Siemens Routine 西门子法,Modified Siemens Routine 改进西门子法,Mainstream Routine at present 目前的主流工艺,Regular Purity is 9N 常规纯度应可到达9N,多晶硅纯度的表示,Substract the content of P,B,and Metals from 100%,用100%扣除磷、硼、金属杂质后的硅的纯度,C,O,N is about 110ppm无需扣除,含有大约110ppm级的碳、氧、氮等元素,e.g.,7N poly silicon,may contain:B:20ppb,P:50ppb,metals:10ppb;,and C:1ppm,O:5ppm,N:1ppm,绝对的硅纯度实际为5N,But content of C,O,N could not exceed the limit,但C、O、N不能过大。,太阳能所需要的多晶硅纯度,Poly silicon with purity higher than 7N could not be made into solar cell directly,7N以上的多晶硅无法用来直接作太阳能电池,B or P must be mixed as dopant,须掺入硼或磷,The dopant of B must be about 0.25ppm,对太阳能来说，硼的掺杂浓度大约在0.25ppmw,i.e.,for solar cell,the purity must down to 6N even using a 11N poly-silicon,也就是说，在生产太阳能电池时，即便采用11N的高纯硅，也必须掺杂降到6N左右。,Impurities and Solar efficiency杂质对光电转换效率的影响,Demand of New Technology新工艺的需求,Because impurities must added to high pure poly-silicon from Siemens method,which means energy double waste,采用西门子法得出高纯度的硅后，又要掺杂到6N的纯度，意味着能源的双重浪费,Thats why the technology of purifying silicon directly to 6N is being explored all the time,直接生产6N太阳能多晶硅的工艺开始被人们所探索。,Metallurgical Routine to purify the poly silicon is the most promising routine,冶金法是被人探索最多，也是目前最被人看好的工艺。,Metallurgical(Physical)Routine冶金法物理法,No chemical change happens to Si in purification process 硅不发生化学反响,Hydro-Metallurgical Routine 湿法冶金法,Powde Metallurgical Routine 粉末冶金法,Vacuum Refinery 真空熔炼法,Energy Beam(Electron,Ionic)Method 能束(电子、离子法,Directional Solidification 定向凝固,Other Metallurgical Methods 其它冶金法,高纯石英直接熔炼、低温熔体萃取等,通常的物理冶金法是采用上述手段的组合来到达对硅提纯的目的。,Process of ProPowers MP Routine,普罗的冶金法流程,5N,Packaging&Delivery,包装发货,Chosen Material,Local Vacuum,精料原则,Arc furcace,矿热炉,湿法冶金,Hydrometallurgy,Vacuum,Refinery,EM Stirring,Energy Beam,真空精炼及铸锭,Pyrochemical,高温化学,硅锭加工,Crystal Stretching,Resistivity Scan,Minor carrier LT,Impurities Test,质量测试,QC,粉末冶金,Powder Metallurgy,Smelting,精炼,Slagging 造渣,6N,5.55.7N,3N,44.5N,4N,Slicing,Cell,Manu-factuering,Mono-Crystal,Theoretical basis of MP Routine MP 法SOG 理论根底,Mechanics of Diffusion and Extraction reaction in solid 固体扩散萃取反响机理,Analysis and application of Hydrophile and hydrophobe in powder metallurgy 粉末冶金的亲水性和疏水性的分析及应用,Research of Segregation on interface between different matters不同物质界面分凝机理研究,Mechanism of physical chemical reaction in slagging refinery 造渣精炼的物理化学反响机制,Principle and application of oxygen dispensing in pyro-liquid silicon 液体硅内部高温施氧的原理与应用,Research of atomic kinetics on solid-liquid interface activity energy固液界面外表活化能的原子动力学研究,Quantum mechanics analysis of atoms in pyroliquid 高温液体原子的量子力学分析,Research on segregation in solid-liquid interfaces 液固界面分凝现象和机理研究,Mathematic model anlysis of heat field and crystal growth theory 晶体生长理论及各类温场的数学模型分析,Researcon existence form and impact of impurities in silicon crystal杂质在硅晶体内部的存在形式和对晶体的影响的研究,Formation mechanism of impurities deep lever and its restrain method杂质深能级的形成机制研究及抑制方法,冶金法同样需要在理论上进行重要的突破。,目 录,Brief Introduction of Metallurgical Purification of SOG,冶金法简介,Evolution of Metallurgical Purification of SOG,冶金法的进展,Impurities and its affect to the SOG,太阳能级多晶硅的杂质及其对材料性能的影响,Quality Stability Analysis of Metallurgical Purified SOG,冶金法多晶硅的质量稳定性分析,Progress of MP method on PurityMP法在纯度上的进展以经济规模,TimeLab PurityProd Purity Mfgrs Country,时间 实验室纯度产品纯度 局部制造商 国家,2003年“5n-JFEJapan,2004年“6n-JFE,2005年“6n-迅天宇 China,2006年“7n5N Elkem Norway,2007年“6n5N Dow Chem.,南安三晶 China,2021年5.7N 5.7n普罗,佳科,银星,BSI,DC，Chn,CAD,2021年6N 5.9N5.9n普罗,银星,etc.China,Progress of MP method Silicon on PurityMP法多晶硅在电池效率上的进展经济规模,时间 转换效率 衰减后 制造商 国家备注,2006年 16%N/AELKEM Norway掺料,2007年 16%1011%南安三晶 China单晶,2021年,6月 13.314.5%无BSI，佳科CHN,CAN 多晶,8月 16.1%12.8%普罗 CHN单晶,12月 17%N/A 银星 CHN 单晶,2021年,4月 16.8%14.5%普罗,CHN 单晶,8月 17.5%17.0%银星 CHN 单晶,两张MP法单晶硅片电阻率扫描图比较,2021年6月样品 2021年4月样品,中山大学太阳能系统所测试 阿特斯阳光电力测试,由图可见，整个硅片电阻率分布更加均匀。,两张MP法单晶硅片少子寿命扫描图比较,2021年6月样品 2021年4月样品,中山大学太阳能系统所测试 阿特斯阳光电力测试,由图可见，拉单晶引起的环线条纹消失，表示硅片更加平均。,CV Progress Comparation between MP method Silicon and Siemens method siliconMP法多晶硅与西门子法多晶硅在电池效率上的进展比较,单晶硅电池,时间 西门子法 冶金物理法衰减后稳定效率,2004年1012%-,2005年 1213%-,2006年1314%-,2007年 1516%1011%,2021年 1617%1214%,2021年 16.518%1517%,从10%到16%,所用的时间 5年2年,CV Progress Comparation between MP method Silicon and Siemens method siliconMP法多晶硅与西门子法多晶硅在电池效率上的进展比较,多晶硅电池,时间 西门子法 冶金物理法衰减后稳定效率,2004年89%-,2005年 911%-,200