第六章-工艺集成选编课件

*,Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,工艺集成,Process Integration,大规模集成电路制造工艺,工艺集成,2,集成电路的工艺集成：,运用各类单项工艺技术（外延、氧化、气相沉积、光刻、扩散、离子注入、刻蚀以及金属化等工艺）形成电路结构的制造过程。,薄膜形成,光刻,掺杂、刻蚀,工艺集成,3,形成薄膜：化学反应，,PVD,，,CVD,，旋涂，电镀；,光刻：实现图形的过渡转移；,改变薄膜：注入，扩散，退火；,刻蚀：最后图形的转移；,器件的制备：,各种工艺的集成,MOS,，,CMOS,，,BJT,，,MESFET,，,BiCMOS,，,工艺目的：,工艺的选择,4,工艺条件：,温度,压强,时间,功率,剂量,气体流量,工艺参数：,厚度,介电常数,应力,浓度,速度,器件参数：,阈值电压,击穿电压,漏电流,增益,工艺的限制,5,MOS,：阈值电压束缚了氧化层厚度；,BJT,：电流增益束缚了基区宽度；,内连线：,RC,延迟束缚了电阻率；,Al,的存在限制了工艺温度；,刻蚀的选择比限制了材料的选择；,器件特性要求对工艺的限制：,工艺兼容性的限制：,集成电路中器件的隔离,6,由于,MOSFET,的源、漏与衬底的导电类型不同，,所以本身就是被,PN,结所隔离，即自隔离,(self-isolated),；,MOSFET,晶体管是自隔离，可有较高的密度，,但邻近的器件会有寄生效应；,LOCOS,隔离,7,希望场区的,V,T,大,保证寄生,MOSFET,的电流小于,1pA,；,增加场区,V,T,的方法,:,场氧化层增厚,:,栅氧化层的,7-10,倍；,增加场氧化区下面掺杂浓度,(,Channel-Stop Implant,，,沟道阻断注入,),；,LOCOS,隔离工艺,8,氮化硅,P,型,衬底,p,+,p,+,P,型,衬底,氮化硅,p,+,p,+,SiO,2,LOCOS,隔离工艺,9,改进的,LOCOS,工艺,PBL:,p,oly,b,uffered,L,OCOS,10,在,LPCVD Si,3,N,4,前,先淀积一层多晶硅,让多晶硅消耗场氧化时横向扩散的,O,2,。鸟嘴可减小至,0.1-0.2,u,m,。,浅阱隔离,(,S,hallow,T,rench,I,solation),11,与,LOCOS,相比,，,STI,尺寸按比例缩小更容易！,MESFET,器件制备工艺流程,12,GaAs,优点：,电子迁移率高；,更高的饱和漂移速度；,衬底可以实现半绝缘；,GaAs,缺点：,体缺陷多；,少子寿命短；,氧化物质量差；,光刻胶,外延生长,n,型有源层；,外延生长,n,+,接触层；,Mask #1,刻蚀形成隔离,MESFET,器件制备工艺流程,13,Mask #2,形成源漏欧姆接触,金属蒸发沉积,Lift-off,工艺形,成金属图形；,蒸发沉积金属；,Mask #3,刻蚀,n,+,层,GaAs,，,源漏间形成断路；,光刻胶,光刻胶,光刻胶,MESFET,器件制备工艺流程,14,Mask #4,将沟道区刻薄；,定义栅极图形；,金属蒸发沉积,光刻胶,光刻胶,Lift-off,工艺形成栅电极,npn,型,BJT,器件制备工艺流程,15,SiO,2,隔离,金属电极,npn BJT,：基区为,p,型半导体，少数载流子为电子，,具有更高的迁移率，器件工作速度更快；,横向隔离用,SiO,2,，相对于,pn,结隔离，寄生电容更小；,纵向利用,n,+,p,结隔离；,n,+,埋层，也可以减少集电极的串联电阻；,npn,型,BJT,器件制备工艺流程,16,Mask #1,定义埋层注入区,杂质注入,+,扩散；,n,型外延层生长，,避免埋层杂质扩散；,npn,型,BJT,器件制备工艺流程,17,Mask #2,形成隔离,减压,SiO,2,生长；,Si,3,N,4,沉积；,硅阱刻蚀；,沟道阻挡离子注入；,隔离,SiO,2,形成；,Si,3,N,4,去除；,npn,型,BJT,器件制备工艺流程,18,Mask #3,基区注入掺杂,Mask #4,薄氧化层刻蚀,Mask #5,基区接触,p,+,注入掺杂,npn,型,BJT,器件制备工艺流程,19,n,+,发射极,/,集电极接触区,P/As,离子注入,Mask #6,发射极注入；,集电极金属接触区注入；,低能量，高剂量注入；,绝缘层,npn,型,BJT,器件制备工艺流程,20,PECVD SiN,x,钝化层,内连金属,纵向,npnBJT,Mask #7,开接触孔；,Mask #8,形成金属电极；,8,次光刻,5,次注入,7,次成膜,5,次刻蚀,p,+,n,+,n,+,n,+,NMOS,制备工艺流程,21,Mask #1,定义有源区,(,沟道阻止注入,),NMOS,制备工艺流程,22,LOCOS,隔离,去除,Si,3,N,4,；,去除压力释放氧化层；,NMOS,制备工艺流程,23,多晶硅,栅氧化层,自对准源,/,漏,/,栅注入,源,漏,沟道,栅,开栅接触孔,多晶硅区,栅氧化层生长；,多晶硅层沉积；,Mask #2,形成栅极,NMOS,制备工艺流程,24,内连金属,(Al-Si-Cu),内连绝缘层,接触孔,Mask #3,开接触孔；,Mask #4,形成金属电极,金属半导体,NMOS,制备工艺流程,25,源漏接触,外联接触,钝化层,PECVD SiN,x,Mask #5,开外联接触窗口,基于,LOCOS,的,CMOS,工艺,26,AlCuSi,PSG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,CMOS,集成电路制造工艺,I,27,技术特点：,LOCOS,隔离工艺；,平坦化层：,PSG,，,re-flow at 1100,o,C,Al-Si,金属作为内联金属；,最小图形尺寸：,30.8um,P,型基片,基于,LOCOS,的,CMOS,工艺,28,29,释放压力,氧化,层,P,型基片,生长释放压力,氧化層,P,型基片,氮化,硅,LPCVD,沉积,氮化,硅,30,P,型基片,光,刻胶,氮化,硅,光,刻胶旋涂,31,Mask #,1,LOCOS,隔离,32,P,型基片,光,刻胶,氮化,硅,Mask #,1,LOCOS,隔离,33,P,型基片,光,刻胶,氮化,硅,对准,和曝光,34,氮化,硅,P,型基片,光,刻胶,显,影,35,氮化,硅,P,型基片,光,刻胶,刻蚀氮化硅,36,氮化,硅,P,型基片,去除光刻胶,37,氮化,硅,P,型基片,p,+,p,+,沟道阻止注入,38,P,型基片,氮化,硅,p,+,p,+,SiO,2,氧化形成,LOCOS,39,P,型基片,p,+,p,+,SiO,2,去除氮化硅,/,压力释放氧化硅,，,清洗,40,P,型基片,p,+,p,+,p,+,SiO,2,生长遮蔽氧化层,41,光,刻胶,P,型基片,p,+,p,+,p,+,SiO,2,光刻胶旋涂,42,Mask#2,N,型,阱区,43,光,刻胶,P,型基片,p,+,p,+,p,+,SiO,2,Mask#2,N,型,阱区,44,光,刻胶,P,型基片,p,+,p,+,p,+,SiO,2,曝光,45,光,刻胶,P,型基片,p,+,p,+,p,+,SiO,2,显影,46,磷,离子注入,光,刻胶,P,型基片,p,+,p,+,p,+,SiO,2,N,型,阱区,N,型,阱区注入（预沉积）,47,P,型基片,p,+,p,+,p,+,SiO,2,N,型,阱区,去除,光,刻胶,48,P,型基片,p,+,p,+,N,型,阱区,SiO,2,N,型,阱区驱入（,Drive-in,）,49,P,型基片,p,+,p,+,N,型,阱区,SiO,2,去除遮蔽氧化层,50,P,型基片,p,+,p,+,N,型,阱区,SiO,2,生长栅极氧化层,51,多晶,硅,P,型基片,p,+,p,+,N,型,阱区,SiO,2,栅极氧化层,沉积多晶硅,52,多晶,硅,P,型基片,p,+,p,+,N,型,阱区,SiO,2,光刻胶旋涂,53,Mask #3,，栅极图形,54,P,型基片,p,+,p,+,N,型,阱区,SiO,2,多晶,硅,Mask #3,，栅极图形,55,多晶,硅,P,型基片,p,+,p,+,N,型,阱区,SiO,2,曝光,56,多晶,硅,P,型基片,p,+,p,+,N,型,阱区,SiO,2,显,影,57,P,型基片,p,+,p,+,N,型,阱区,SiO,2,光,刻胶,多晶,硅栅极,刻蚀多晶硅,光,刻胶,58,多晶硅栅极,P,型基片,p,+,p,+,N,型,阱区,SiO,2,去除光刻胶,59,多晶,硅栅极,光,刻胶,P,型基片,p,+,p,+,N,型,阱,SiO,2,光刻胶旋涂,60,光,刻胶,P,型基片,p,+,p,+,N,型,阱,SiO,2,Mask #4 NMOS,源漏注入,61,光,刻胶,P,型基片,p,+,p,+,N,型,阱,SiO,2,曝光,62,光,刻胶,P,型基片,p,+,p,+,N,型,阱,SiO,2,显影,63,P,型基片,p,+,p,+,SiO,2,磷,/,砷离子注入,NMOS,源漏栅自对准注入,64,65,P,型基片,p,+,p,+,SiO,2,去除光刻胶,P,型基片,p,+,p,+,SiO,2,光刻胶旋涂,66,P,型基片,p,+,p,+,SiO,2,Mask #5 PMOS,源漏注入,67,P,型基片,p,+,p,+,N,型,阱区,SiO,2,显,影,68,硼离子注入,P,型基片,p,+,p,+,SiO,2,P,型,源漏栅自对准注入,69,P,型基片,p,+,p,+,SiO,2,去除光刻胶,70,p,+,p,+,P,型基片,SiO,2,n,+,n,+,p,+,p,+,退火,71,p,+,p,+,SiO,2,n,+,n,+,p,+,p,+,LPCVD,氮化,硅阻挡层沉积,72,PSG,p,+,p,+,SiO,2,n,+,n,+,p,+,p,+,CVD,沉积,PSG/,BPSG,73,PSG,p,+,p,+,SiO,2,n,+,n,+,p,+,p,+,PSG,Re-Flow,74,PSG,p,+,p,+,SiO,2,n,+,n,+,p,+,p,+,光刻胶旋涂,75,PSG,p,+,p,+,SiO,2,n,+,n,+,p,+,p,+,Mask #6,形成接触孔,76,BPSG,p,+,p,+,SiO,2,n,+,n,+,p,+,p,+,显,影,77,PSG,p,+,p,+,SiO,2,n,+,n,+,p,+,p,+,接触孔刻蚀,78,PSG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,去除光刻胶,79,AlCuSi,PSG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,金属沉积,80,AlCuSi,PSG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,光刻胶旋涂,81,AlCuSi,P,SG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,Mask #7,形成金属连线,82,AlCuSi,PSG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,显,影,83,AlCuSi,BPSG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,金属刻蚀,84,AlCuSi,PSG,p,+,p,+,n,+,n,+,p,+,p,+,SiO,2,去除,光,刻胶,85,CMOS,集成电路制造,II,86,技术特点：,消除单晶硅衬底内氧杂质的影响，外延生长器件层；,STI,绝缘替代,LOCOS,绝缘；,引入,LDD,结构减小热载流子效应,利用金属硅化物减小寄生电阻；,利用,BPSG,作为金属前电介质,;,RTA,活化注入杂质；,最小图形尺寸：,0.80.13um,P,型硅衬底准备,P,型,硅衬底,轻掺杂外延生长,p,-,硅外延层,P,型,硅衬底,89,Mask #,1:,N,型,阱区,N,型,阱区注入,p,-,外延层,P,型,衬底,光,刻胶,N,型,阱区,磷,离子,Mask #,2:,P,型,阱区,92,P,型,阱区注入,硼,离子,P,型,阱区,N,型,阱区,光,刻胶,93,杂质扩散,N,型,阱区,P,型,阱区,94,生长氧化层,LPCVD,沉积氮化硅,N,型,阱区,P,型,阱区,氮化,硅,95,Mask #,3:,浅,沟槽绝缘,(,STI),刻蚀沟槽,N,型,阱,P,型,阱,氮化,硅,氮化,硅,97,HDP-CVD,沉积,USG,填充沟道,N,型,阱,P,型,阱,氮化,硅,氮化,硅,USG,USG,98,CMP USG,停止,于氮化硅层,N,型,阱,P,型,阱,Nitride,Nitride,USG,99,去除氧化硅,/,氮化硅,N,型,阱,P,型,阱,USG,STI,100,Mask #,4:,N,MOS,沟道,V,T,调整掺杂,101,光,刻胶,磷,离,子,N,型,阱,P,型,阱,USG,STI,N,MOS,沟道,V,T,调整掺杂,102,Mask #,5:,P,MOS,沟道,V,T,调整掺杂,103,光,刻胶,硼,离,子,N,型,阱,P,型,阱,STI,USG,P,MOS,沟道,V,T,调整掺杂,104,热氧化层生长,/,多晶硅沉积,多晶,硅,N,型,阱,P,型,阱,STI,USG,105,Mask #,6:,栅极,(,俯视图,),106,刻蚀多晶硅,多晶,硅栅极,N,型,阱,P,型,阱,STI,USG,光,刻胶,栅极氧化层,107,Mask #,7:,NMOS LDD,掺杂,108,NMOS LDD,掺杂,光,刻胶,砷,离子,N,型,阱,P,型,阱,USG,STI,109,Mask #8,:,PMOS LDD,掺杂,110,PMOS LDD,掺杂,BF,2,+,光,刻胶,BF,2,+,离,子,N,型,阱,P,型,阱,STI,USG,111,侧壁层,(Spacer),栅极氧化层,n,-,LDD,n,-,LDD,侧壁层,侧壁层,多晶,硅栅极,多晶,硅栅极,栅极氧化层,n,-,LDD,n,-,LDD,112,Mask #,9:,NMOS,源漏注入,113,NMOS,源漏注入,光,刻胶,磷,离,子,N,型,阱,P,型,阱,n,+,n,+,STI,p,-,p,-,USG,114,Mask #,9:,PMOS,源漏注入,115,PMOS,源漏注入,光,刻胶,硼,离,子,N,型,阱,P,型,阱,n,+,n,+,STI,p,+,p,+,USG,116,金属硅化物制备,多晶,硅栅极,侧壁层,侧壁层,栅极氧化层,n,-,n,-,n,+,n,+,Ar,+,Ar,+,Ti,多晶,硅栅极,n,-,n,-,n,+,n,+,TiSi,2,TiSi,2,Ti,多晶,硅栅极,n,-,n,-,n,+,n,+,TiSi,2,TiSi,2,多晶,硅栅极,n,-,n,-,n,+,n,+,117,BPSG,沉积,/,回流,(Re-Flow),n,+,n,+,p,+,p,+,STI,USG,BPSG,n,+,n,+,p,+,p,+,STI,USG,BPSG,118,Mask #,10:,接触孔,119,接触孔刻蚀,N,型,阱,P,型,阱,BPSG,n,+,n,+,p,+,p,+,STI,USG,120,CVD,钨沉积,N,型,阱,P,型,阱,BPSG,n,+,n,+,p,+,p,+,STI,USG,钨,钛,/ 氮化,钛,121,金属沉积,N,型,阱,P,型,阱,BPSG,n,+,n,+,p,+,p,+,STI,USG,铝铜,合金,钛,TiN ARC,W,122,Mask #,11:,金属,1,连线,123,金属刻蚀,P,-,型外延层,P,型晶,圆衬底,N,型,阱,P,型,阱,BPSG,n,+,n,+,p,+,p,+,STI,USG,钛,TiN ARC,W,铝铜,合金,124,P,-,型硅外延层,P,型,晶圆,金属,3,铝,铜,合金,IMD 3,USG,金,属,4,铝,铜,USG,氮化硅,铝,铜,合金,N,型,阱,P,型,阱,BPSG,n,+,n,+,p,+,p,+,STI,USG,W,铝,铜,合金,USG,M1,M2,铝,铜,USG,W,IMD 1,IMD 2,TiSi,2,多晶,硅,Ti,TiN ARC,W,Ti/TiN,Ti/TiN,侧壁层,USG,PMD,阻挡层,氮化硅,IMD 3,钝化层,1,钝化层,2,PMD,CMOS,截面,CMOS,集成电路制造,III,125,技术特点：,使用,SOI,和,STI,技术；,利用铜连接和低介电常数介电质，减少,RC,延迟；,使用金属,CMP,代替金属刻蚀；,图形最小尺寸：,0.13um,126,裸晶,圆,P,型晶,圆,127,大电流氧离子注入,P,型晶,圆,氧离子,O,+,128,氧化退火,P,型晶,圆,深埋,SiO,2,层,129,晶圓清洗,去除表面自然氧化层,P,型晶,圆,深埋,SiO,2,层,130,外延层沉积,P,型,外延层,131,晶圓清洗,P,型,外延层,132,压力释放氧化层生长,P,型晶,圆,深埋,SiO,2,层,P,型,外延层,133,LPCVD,氮化,硅沉积,P,型晶,圆,深埋,SiO,2,层,P,型,外延层,氮化,硅,134,旋涂光刻胶,P,型,外延层,光,刻胶,氮化,硅,135,Mask #1,:,浅沟槽隔离,(,STI),136,对准和曝光,P,型,外延层,光,刻胶,氮化,硅,137,显影,P,型,外延层,光,刻胶,氮化,硅,138,氮化硅,/,氧化硅刻蚀,P,型,外延层,光,刻胶,氮化,硅,139,去除光刻胶,P,型,外延层,氮化,硅,140,刻蚀硅,P,型,外延层,氮化,硅,P,型,外延层,141,晶圓清洗,P,型,外延层,氮化,硅,P,型,外延层,142,P,型,外延层,P,型,外延层,保护氧化层生长,氮化,硅,143,P,型,外延层,P,型,外延层,未掺杂氧化层沉积,（,undoped silicate glass, USG),氮化,硅,USG,USG,144,P,型,外延层,P,型,外延层,CMP,刻蚀,USG,氮化,硅,USG,USG,145,P,型,外延层,P,型,外延层,去除氮化硅,USG,USG,146,P,型,多晶硅,P,型,多晶硅,去除释放压力氧化层,USG,USG,STI,147,P,型,外延层,P,型,外延层,牺牲氧化层生长,USG,USG,STI,148,P,型,外延层,P,型,外延层,光刻胶旋涂,USG,USG,STI,光,刻胶,149,Mask #,2:,N-,型,阱,150,P,型,外延层,P,型,外延层,曝光,USG,USG,STI,光阻,151,P,型,外延层,P,型,外延层,显影,USG,USG,STI,光,刻胶,152,P,型,外延层,N-,型,阱注入,P,型晶圓,USG,USG,STI,光,刻胶,N,型,阱区,磷,离,子,P,+,不同能量，多次注入，形成均匀分布,153,P,型,外延层,PMOS V,T,调整注入,USG,USG,STI,光,刻胶,N,型,阱区,硼,离,子,B,+,利用同一次光刻形成图形,154,P,型,外延层,去除光刻胶,USG,USG,STI,N,型,阱区,155,P,型,外延层,光刻胶旋涂,USG,USG,STI,N,型,阱区,光,刻胶,156,Mask #,3:,P,型,阱,157,P,型,外延层,曝光,USG,USG,STI,N,型,阱,光,刻胶,158,P,型,外延层,显影,USG,USG,STI,N,型,阱,光,刻胶,159,P,型,阱,P-,型,阱注入,USG,USG,STI,N,型,阱,光,刻胶,硼,离,子,B,+,多次不同能量注入形成均匀分布,160,P,型,阱,NMOS V,T,调整注入,USG,USG,STI,N,型,阱,光,刻胶,磷,离,子,P,+,161,P,型,阱,去除光刻胶,USG,USG,STI,N,型,阱,162,P,型,阱,去除牺牲氧化层,USG,USG,STI,N,型,阱,163,P,型,阱,晶圓清洗,USG,USG,STI,N,型,阱,164,P,型,阱,生长栅极氧化层,USG,USG,STI,N,型,阱,165,P,型,阱,LPCVD,沉积非晶硅,USG,STI,N,型,阱,非晶,硅,栅极氧化层,USG,非晶硅相对于多晶硅表面更加平整,166,P,型,阱,光刻胶旋涂,USG,USG,STI,N,型,阱,非晶,硅,光,刻胶,167,Mask #,4,栅极和局部互联,168,P,型,阱,曝光,USG,USG,STI,N,型,阱,非晶,硅,光,刻胶,169,P,型,阱,显影,USG,USG,STI,N,型,阱,非晶,硅,刻胶,170,P,型,阱,非晶,硅刻蚀,USG,USG,STI,N,型,阱,非晶,硅,光,刻胶,栅极氧化层,171,P,型,阱,去除光刻胶,USG,USG,STI,N,型,阱,非晶,硅,172,P,型,阱,非晶硅,退火,USG,USG,STI,N,型,阱,多晶,硅,173,P,型,阱,光刻胶旋涂,USG,USG,STI,N,型,阱,光,刻胶,多晶,硅,174,Mask #,5,NMOS LDD,注入,175,P,型,阱,曝光,USG,USG,STI,N,型,阱,多晶,硅,光,刻胶,176,P,型,阱,显影,USG,USG,STI,N,型,阱,光,刻胶,177,P,型,阱,NMOS LDD,注入,USG,USG,STI,N,型,阱,光,刻胶,锑离,子,Sb,+,178,P,型,阱,去除,光,刻胶,USG,USG,STI,N,型,阱,179,P,型,阱,光刻胶旋涂,USG,USG,STI,N,型,阱,多晶,硅,光,刻胶,180,Mask #,6:,PMOS LDD,注入,181,P,型,阱,曝光,USG,USG,STI,N,型,阱,多晶,硅,光,刻胶,182,P,型,阱,显影,USG,USG,STI,N,型,阱,多晶,硅,光,刻胶,183,P,型,阱,PMOS LDD,注入,USG,USG,STI,N,型,阱,多晶,硅,光,刻胶,BF,2,+,184,P,型,阱,去除,光,刻胶,USG,USG,STI,N,型,阱,185,P,型,阱,氧化硅,氮化硅沉积,USG,USG,STI,N,型,阱,186,P,型,阱,氮化硅,/,氧化硅刻蚀,USG,USG,STI,N,型,阱,侧壁层,(spacer),多晶,硅栅极,187,P,型,阱,光刻胶旋涂,USG,USG,STI,N,型,阱,光,刻胶,188,Mask #,7,NMOS S/D,注入,189,P,型,阱,曝光,USG,USG,STI,N,型,阱,光,刻胶,190,P,型,阱,显影,USG,USG,STI,N,型,阱,光,刻胶,191,P,型,阱,NMOS S/D,注入,USG,N,型,阱,光,刻胶,STI,USG,砷,离,子,As,+,192,P,型,阱,去除光刻胶,USG,N,型,阱,STI,USG,n,+,n,+,193,P,型,阱,涂胶,USG,N,型,阱,STI,USG,n,+,n,+,光,刻胶,194,Mask #,8,PMOS S/D,注入,195,P,型,阱,曝光,USG,N,型,阱,STI,USG,n,+,n,+,光,刻胶,196,P,型,阱,显影,USG,N,型,阱,STI,USG,n,+,n,+,光,刻胶,197,P,型,阱,PMOS S/D,注入,USG,N,型,阱,STI,USG,n,+,n,+,光,刻胶,硼,离,子,B,+,198,P,型,阱,去除光刻胶,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,199,P,型,阱,RTA,退火,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,200,P,型,阱,氩离子溅射刻蚀,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,去除表面自然氧化层,201,P,型,阱,钴,(Co),和,TiN,沉积,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,钴,氮化,钛,TiN,保护,Co,不被氧化,202,P,型,阱,RTA,退火,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,钴硅,化物(,CoSi,2,),钴,氮化,钛,203,P,型,阱,去除,TiN,，,Co,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,钴硅,化物(,CoSi,2,),204,P,型,阱,PECVD,沉积氮化硅,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,小尺寸器件下，热预算的要求不能使用,LPCVD,氮化硅,205,P,型,阱,沉积,PSG,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,PECVD,氮化硅用来阻止,P,的扩散,206,P,型,阱,CMP,刻蚀,PSG,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,207,P,型,阱,光,刻胶旋涂,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,光,刻胶,208,Mask #,9,接触孔,209,P,型,阱,曝光,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,光,刻胶,210,P,型,阱,显影,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,光,刻胶,211,P,型,阱,刻蚀,PSG,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,光,刻胶,212,P,型,阱,去除光刻胶,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,213,P,型井區,氩离子溅射刻蚀,P,型晶圓,深埋,SiO,2,層,USG,N,型井區,STI,USG,n,+,n,+,p,+,p,+,PSG,清洁表面,214,P,型,阱,Ti/TiN,溅射沉积,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,Ti,/ 氮化,钛附着层,/,阻挡层,215,钨,P,型,阱,CVD,沉积钨（,W),USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,Tungsten,W,CVD,沉积具有良好的太阶覆盖性和填空性能,216,P,型,阱,CMP,金属刻蚀,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,217,PECVD,沉积,SiC,密封层,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SiC,致密性高，可以阻止,Cu,扩散；,SiC,的介电常数,: 4-5,，,SiN,x,的介电常数,: 7-8;,218,SOD,旋涂,SOD,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SOD,：,spin-on-dielectric,219,SOD,烘烤,硬化,SOD,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,220,PECVD,沉积,SiC,刻蚀停止层,SOD,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,221,SOD,旋涂,及硬化,SOD,SOD,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,222,沉积,PE-TEOS,覆盖层,SOD,SOD,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SOD,具有吸水性,223,光刻胶旋涂,SOD,SOD,光,刻胶,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,224,Mask #,10,金属接触孔,1,225,曝光,SOD,SOD,光,刻胶,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,226,显影,SOD,SOD,光,刻胶,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,227,刻蚀,PE-TEOS,和,SOD,并,在,SiC,层停止,SOD,SOD,光,刻胶,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,228,去除,光,刻胶,SOD,SOD,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,229,光刻胶旋涂,SOD,SOD,光,刻胶,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,230,Mask #,11,金属沟槽,1,231,對準和曝光,SOD,SOD,光,刻胶,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,232,显影,SOD,SOD,光,刻胶,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,233,沟槽刻蚀,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,SOD,SOD,光,刻胶,234,去除光刻胶,SOD,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,SOD,235,氩离子刻蚀清洁,SOD,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SOD,236,PVD,沉积钽和氮化钽阻挡层,SOD,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SOD,钽和氮化钽：阻挡铜的扩散,237,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,PVD,沉积,Cu,籽晶层,SOD,SOD,238,铜电镀沉积,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SOD,SOD,铜,1,铜,1,铜,1,铜,1,239,銅退火,P,型,阱,USG,N,型,阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SOD,SOD,铜,1,铜,1,铜,1,铜,1,250,o,C,减小电阻,240,CMP,金属刻蚀,USG,STI,USG,n,+,n,+,p,+,p,+,PSG,SOD,SOD,銅,1,銅,1,銅,1,銅,1,241,P,-,型阱,P,-,型,晶圆,深埋,SiO,2,层,USG,N,-,型阱,STI,USG,n,+,n,+,p,+,p,+,PSG,钨,钨,SOD,SOD,Cu 1,铜,1,Cu 1,铜,1,Cu 1,铜,1,Cu 1,铜,1,SOD,SOD,铜,2,SOD,SOD,铜,3,铜,3,SOD,铜,4,SOD,SOD,铜,5,PSG,氮化硅,铅锡合金,-,SOD,碳化硅密封层,氮化硅阻挡层,PE-TEOS,覆盖层,碳化硅密封层,氮化硅密封层,Ta/TaN,阻挡层,碳化硅刻蚀阻挡层,多晶硅栅极,钴硅化物,铬铜金衬底,切割，测试，封装,242,Good 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