开关电源常用元器件

单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,开关电源技术（二）,第二章 常用元器件,一、电阻,二、电容,三、二极管,四、晶体管,五、,MOSFET,和,IGBT,1,开关电源技术（二）,无源器件,R C L T,有源器件,D Q MOSFET IGBT,2,开关电源技术（二）,电阻,Resistor,WHAT,3,电阻,表面贴装,-SMD,直插型,4,电阻,氧化膜电阻,金属膜电阻,铝壳电阻,功率,线绕电阻,压敏电阻,贴片电阻,陶瓷电阻,碳膜电阻,径向,热敏电阻,高压片状玻璃釉,膜电阻,高压电阻,玻封热敏电阻,网络电阻,光敏电阻,可调电阻,5,贴片电阻,型号,尺 寸,(mm),英寸,L,W,H,M,N,RR1005,1.000.10,0.500.05,0.350.05,0.200.10,0.250.10,0402,RR1608,1.600.15,1.600.15,0.500.15,0.300.15,0.300.15,0603,RR2012,2.000.15,1.250.15,0.500.15,0.400.25,0.400.25,0805,RR3216,3.200.15,1.600.15,0.550.15,0.500.25,0.500.25,1206,6,贴片电阻,型号,额定功率,(70,),使用温度,最大工作电压,最高负荷电压,阻值范围,阻值误差,电阻温度系数,J,K,0402,1/32W,-55-+125,50V,100V,10-1M,5%,1%,250ppm/,(RR1005),1/16W,25V,50V,100-1M,0603,1/10W,50V,100V,10-10M100-1M,100ppm/200ppm/1M250ppm/,(RR1608),1/16W,0805,1/10W,100V,200V,(RR2012),1/8W,1206,1/8W,200V,400V,(RR3216),1/4W,7,碳膜电阻,名 称,型号,功率,(W),最高使用电压,(V),最高过载电压,(V),阻值误差,(%),阻值范围,(),温度系数,(PPm/),碳膜,电阻,RT13,0.125,200,400,2,1,5,1,1M,全系列,+300/-500,RT14,0.25,250,500,1,1M,全系列,RT15,0.5,350,700,1,1M,全系列,8,薄膜电阻,型号,RJ72,RJ73,RJ74,RJ16,RJ17,DIN-44061,0204,0207,0411,0617,0719,MIL-R- 1050 9F,RN50,RN55,RN60,RN65,RN70,阻值范围,0.1 -22M ,0.1 -22M ,0.1 -22M ,0.1 -22M ,0.1 -22M ,精度,%,F,（, 1,）；,D,（, 0.5,）；,C,（, 0.25,）；,B,（, 0.10,）；,J( 5.0),温度系数,ppm/C,C1,（, 100,）,C2,（, 50,）,C3,（, 25,）,C5,（, 15,）,C6,（, 10,）,额定功率,(W) P 70,1/8W,1/4W,1/2W,1.0W,2.0W,工作电压,200 V,250V,300V,350V,400V,尺寸,(mm),L0.50,3.2,5.9,10.0,12,16,D0.30,1.8,2.4,3.2,4,5.4,d0.05,0. 45,0.60,0.60,0.70,0.80,9,绕线电阻,10,绕线电阻,功率,尺寸,(mm),阻值范围,(),A,B,C,D,E,F,G,H,I,J,K,L,M,O,75W,110,25,16,30,8,150,5,18,6,166,58,1.2,6,27,0.18,90W,90,28,18,32,8,130,5,19,6,146,60,1.2,6,27,0.19,120W,110,28,18,32,8,150,5,19,6,166,60,1.2,6,27,0.112,150W,140,28,18,32,8,180,5,19,6,196,60,1.2,6,27,0.115,180W,160,28,18,32,8,200,5,19,6,216,60,1.2,6,27,0.118,225W,195,28,18,32,8,235,5,19,6,251,60,1.2,6,27,0.123,240W,185,35,24,36,10,225,5,19,8,245,76,1.6,6,34,0.124,300W,210,35,24,36,10,250,5,19,8,274,76,1.6,6,34,0.330,375W,210,40,25,38,12,250,5,20,8,274,78,1.6,6,34,0.338,450W,260,40,25,38,12,300,5,20,8,320,78,1.6,6,34,0.345,600W,330,40,25,38,12,370,5,20,8,395,78,1.6,6,34,0.360,750W,330,50,35,50,12,380,6,25,9,400,100,1.6,8,40,0.375,900W,400,50,35,50,12,450,6,25,9,470,100,1.6,8,40,0.390,1000W,460,50,35,50,12,510,6,25,9,530,100,1.6,8,40,0.5100,1200W,460,60,40,55,15,515,6,30,10,535,110,1.6,10,50,0.5120,1500W,540,60,40,55,15,595,6,30,10,615,110,1.6,10,50,0.5150,2000W,650,65,42,62,15,702,6,30,10,722,115,1.6,10,50,0.5200,11,压敏电阻,温度为,20,度，压敏电阻上流过,1mA,直流电流时，加在该压敏电阻两端的相应电压叫做压敏电压。,220V,一般选择,600V,12,压敏电阻,型号规格,压敏电压,最大允许使用电压,限制电压,(8/20S),能量耐量,(J),通流量,( 8/20S ),静态功率,电容量,(,参考值,),V1mA(v),ACrms(v),DC(v),Vc(v),Ip(A),10/100,S,2ms,1,次冲击,(kA),2,次冲击,(kA),(W),1kHz( pF),5D681K,612-748,385,560,1120,5,25,19,800,600,0.1,68,5D621K,558-682,385,505,1025,5,24,18,800,600,0.1,75,5D561K,504-616,350,460,920,5,23,17,800,600,0.1,80,5D511K,459-561,320,418,842,5,22,16,800,600,0.1,85,5D471K,423-517,300,385,810,5,21,15,800,600,0.1,90,5D431K,387-473,275,350,745,5,20,15,800,600,0.1,100,5D391K,351-429,250,320,675,5,17,12,800,600,0.1,105,5D361K,324-396,230,300,620,5,16,11,800,600,0.1,125,5D331K,297-363,210,275,575,5,15,10,800,600,0.1,130,5D301K,270-330,195,250,525,5,13,9,800,600,0.1,135,5D271K,243-297,175,225,475,5,12,8,800,600,0.1,150,5D241K,216-264,150,200,415,5,10.5,7.5,800,600,0.1,165,5D221K,198-242,140,180,380,5,9.0,6.0,800,600,0.1,190,5D201K,185-225,130,170,355,5,9.0,6.0,800,600,0.1,240,5D181K,162-198,115,150,320,5,7.5,5.5,800,600,0.1,330,5D151K,135-165,95,125,260,5,6.5,4.5,800,600,0.1,490,5D121K,108-132,75,100,210,5,4.5,3.5,800,600,0.1,670,5D101K,90-110,60,85,175,5,4.0,3.0,800,600,0.1,860,13,电阻,电阻值（,E24,、,E96,）,精度（误差）,（,0.01%,0.05%,0.1%,0.25%,0.5%,1%,5%,）,最大电压（封装）,温度系数,（,5PPM,；,10PPM,；,15PPM,；,25PPM,；,50PPM,）,额定功率（封装、降额）,14,开关电源技术（二）,电容,Capacitor,WHAT,15,电容,高压陶瓷电容 贴片陶瓷电容 瓷片电容,CBB,电容 钽电解电容 铝电解电容,涤纶电容 独石电容 安规电容,16,贴片电容,使用材料,规定容量,额定电压,0603,0805,1206,1210,1808,1812,2225,3012,3035,COG(NPO),25V,OR5102,OR5332,OR5472,561103,561103,102103,102473,102473,102104,50V,OR5102,OR5222,OR5392,561562,561562,102103,102223,100183,102473,100V,OR5821,OR5102,OR5302,100472,100472,100103,100273,100183,102333,200V,OR5331,OR5821,OR5202,100332,100272,100562,100123,100822,100103,500V,OR5561,OR5102,100202,100182,100392,100682,100472,100822,1000V,OR5681,100821,100821,100122,100222,100162,100472,2000V,OR5101,100471,100221,100391,100102,100681,100222,3000V,100151,100271,100681,100471,100681,4000V,100101,100221,100561,100331,100471,X7R,25V,101473,221105,102105,102334,561335,103474,103105,102155,103225,50V,101273,221105,102105,102224,561205,103334,103105,151105,103225,100V,101103,151333,102683,151224,151224,103224,151105,151684,103105,200V,101682,151223,151473,151104,151104,151154,151474,151394,100105,500V,151103,151223,151333,151393,151104,151334,151274,100684,1000V,151562,151103,151103,151273,151563,151393,100474,2000V,151152,151682,151682,151103,151273,151223,102104,3000V,151152,151222,151392,151332,151103,4000V,151102,151152,151332,151272,151822,Y5V(Z5U),25V,222334,103105,103125,104155,104155,154225,684475,684335,105106,50V,222104,103684,103105,104155,104155,154225,684335,684155,105685,100V,222683,103104,103334,104824,103824,104155,103205,103155,103335,200V,103563,103154,104391,103394,103474,103684,103564,103824,250V,103563,103154,103391,103394,103474,103684,103564,103684,17,CBB,电容,特点及用途：,金属化聚丙烯膜卷绕，无感式结构,环氧树脂包封，,CP,线单向引出,体积极小，适用于对电容器体积有严格要求的场合,自愈性能好，绝缘电阻高，耐高温电容量稳定,适用于直流和低脉动电路，广泛应用于各种电子仪器，,电子设备的滤波、隔直、旁路、耦合和降噪等场合,高频损耗极小，内部温升很低,技术要求：,气候类别：,55/085/21,额定电压：,50V,、,63V,电容量范围：,0.01-1.0F,电容量偏差：,J(5%), K(10%),耐电压：,1.60UR(5s),绝缘电阻：,50 000M,CR0.33F (20,1min),15 000s, CR0.33F(20,1min),损耗角正切：,10,.0001,（,1kHz,20,）,18,电容的高频模型,无极性 有极性,ESR,19,电容,X,C,ESR,Z,损耗因数,DF=ESR/Xc,损耗正切角,tan,等效串联电阻,ESR,功率因数,cos,如果纹波有要求，,DF,值应大于,67%,20,开关电源技术（二）,二极管,DIODE,WHAT,21,二极管,二极管的封装,22,二极管,I,F,U,F,t,F,t,0,t,rr,t,d,t,f,t,1,t,2,t,U,R,U,RP,I,RP,d,i,F,d,t,d,i,R,d,t,反向恢复时间：,t,rr=,t,d+,t,f,恢复特性的软度：下降时间与延迟时间的比值,t,f /,t,d,，或称恢复系数，用,S,r,表示,正向恢复时间：,t,fr,延迟时间：,t,d=,t,1-,t,0,电流下降时间：,t,f=,t,2-,t,1,反向恢复时间：,t,rr=,t,d+,t,f,23,二极管,二极管的主要类型,:,整流二极管（,Rectifier Diode,）：,trr,5us,，一般用于开关频率,1kHz,以下的整流电路（低频、大容量）。,正向电流定额和反向电压定额可以达到很高，分别可达数千安和数千伏以上。,快恢复二极管,(FRED),：,trr,很短的二极管（,trr,=,几十,几百,ns,）。一般用于高频电路。,性能上可分为快速恢复和超快速恢复两个等级。,肖特基二极管,(Power Schottky Diode),：,t,rr,很短（,trr,=1040ns,） 正向压降 较低，一般用于高频、低电压电路。,24,二极管,最高工作结温,TJM,：指在,PN,结不致损坏的前提下，,PN,结所能承受的最高平均结温。,通常在,1250C1750C,之间。,浪涌电流,IFSM,：指电力二极管所能承受的最大的连续一个或几个工频周期的过电流。,正向平均电流,IF,（,AV,）,：指在规定的管壳温度（,TC,）和散热条件下，允许流过的最大,工频正弦半波,电流的平均值。,正向压降,UF,：指在规定的温度下流过某一指定的稳态电流时对应的正向压降 。,反向重复峰值电压,U,RRM,：指电力二极管所能重复施加的反向最高峰值电压。,通常是其雪崩击穿电压,U,B,的,2/3,使用时，往往按照电路中电力二极管可能承受的反向最高峰值电压的,两倍,来选定。,二极管的主要参数,25,开关电源技术（二）,三极管,Transistor,WHAT,26,三极管,参数,型号,极性,极 限 参 数,直流参数,交流参数,管腿排列,Pc,mW,Ic,mA,BV,CBO,V,BV,CEO,V,BV,EBO,V,ICBO,IEBO,VCE(sat),hFE,fT,MHz,A,Vcb,V,A,Veb,V,V,Ic,mA,IB,mA,VCE,V,Ic,mA,S9012,PNP,625,500,40,20,5,0.1,25,0.1,3,0.6,500,50,60-300,1,50,-,EBC,S9013,NPN,625,500,40,20,5,0.1,25,0.1,3,0.6,500,50,60-300,1,50,-,EBC,S9014,NPN,450,100,50,45,5,0.05,50,0.05,5,0.3,100,5,60-1000,5,1,150,EBC,S9015,PNP,450,100,50,45,5,0.05,50,0.05,5,0.7,100,5,60-600,5,1,100,EBC,S8050,NPN,1000,1500,40,25,6,0.1,30,0.1,6,0.5,800,80,85-300,1,100,100,EBC,S8550,PNP,1000,1500,40,25,6,0.1,35,0.1,6,0.5,800,80,85-300,1,100,100,EBC,E8050,NPN,625,700,25,20,5,1,20,-,-,0.5,500,50,60-300,1,150,150,EBC,E8550,PNP,625,700,25,20,5,1,20,-,-,0.5,500,50,60-300,1,150,150,EBC,27,开关电源技术（二）,电力场效应晶体管,Power MOSFET,WHAT,28,功率半导体的应用范围,29,MOSFET,P,沟道,N,沟道,增强型,耗尽型,绝缘栅型,结型,场效应,晶体管,30,MOSFET,MOSFET,的封装形式,31,MOSFET,工作原理：,由栅极,(Gate),电压来改变导电沟道，从而控制漏极,(Drain),、源极,(Source),之间的电流和等效电阻，使场效应管处于截止或导通状态。,导通、关断条件,导通条件：栅极加正电压,关断条件：栅极电压为零或加负电压（,-5V,）,32,MOSFET,优点,电流增益大，驱动功率小，驱动电路简单,;,开关速度很快，工作频率很高,;,正的电阻温度特性（负的电流温度特性），易并联均流。,缺点,通态电阻较大，通态损耗相应也大；,单管容量难以提高，只适合小功率（,10KW,以下）。,33,MOSFET,静态参数,正向通态电阻,Ron,漏极电压,UDS,漏极电流,ID,、最大漏极电流,IDM,漏极击穿电压,UBDS : 1500V,栅极开启电压,UGSth,栅源击穿电压,UBGS :,一般为,20V,。,34,MOSFET,动态参数,极间电容,输入电容：,Ciss,输出电容：,Coss,反馈电容：,Crss,几点说明：, 电力,MOSFET,开关速度取决于栅极驱动电阻,R,G,与栅极输入电容,C,iss,的充放电时间。, 使用时，栅极不能开路。, 由于存在寄生的反并二极管，因此无反向阻断能力，不能承受反压。,35,MOSFET,的主要寄生参数,36,开关电源技术（二）,绝缘栅双极晶体管,（,IGBT,）,WHAT,37,IGBT,IGBT,的封装形式,38,IGBT,最大集射极间电压,U,CES,由内部,PNP,晶体管的击穿电压确定。,最大集电极电流,包括额定直流电流,I,C,和,1ms,脉宽最大电流,I,CP,。,最大集电极功耗,P,CM,正常工作温度下允许的最大功耗 。,IGBT,的,主要参数,39,IGBT,的主要寄生参数,40,