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,单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,Silvaco,学习,*,Silvaco TCAD,器件仿真(二),Tang shaohua,SCU,*,1,Silvaco,学习,E-Mail:,上一讲知识回顾和本讲内容,上一讲内容:,器件仿真的整体思路,器件结构,材料特性,物理模型,计算方法,特性获取和分析,这一讲安排,器件,结构生成(,2D/3D,),ATLAS,语法描述结构,DevEdit,编辑,结构,*,2,Silvaco,学习,器件仿真流程,*,Silvaco,学习,3,ATLAS,描述器件结构,ATLAS,描述器件结构的步骤,*,Silvaco,学习,4,mesh,region,electrode,doping,mesh,网格定义,,状,态有,mesh,x.mesh,y.mesh,eliminate,等,Mesh,对网格进行控制,x.mesh,和,y.mesh,定义网格位置及其间隔,(line),*,Silvaco,学习,5,mesh space.mult=1.5,mesh infile=nmos.str,x.mesh loc=0.1 spac=0.05,mesh,Eliminate,可以在,ATLAS,生成的,mesh,基础上消除掉一些网格线,消除方式为隔一条删一条,参数,columns,rows,ix.low,ix.high,iy.low.ly.high,x.min,x.max,y.min,y.max,*,Silvaco,学习,6,Eliminate columns x.min=0.2 x.max=1.4 y.min=0.2 y.max=0.7,Eliminate,前,Eliminate,后,region,Region,将,mesh,中不同位置以区域组织起来,语法:,Region number=,*,Silvaco,学习,7,region num=1 y.max=0.5 silicon,region num=2 y.min=0.5 y.max=1.0 x.min=0 x.max=1.0 oxide,region num=3 y.min=1.0 y.max=2.0 x.min=0 x.max=1.0 GaAs,例句:,electrode,Electrode,定义电极,语法:,electrode name=num=substrate ,*,Silvaco,学习,8,elec name=emitter x.min=1.75 x.max=2.0 y.min=-0.05 y.max=0.05,elec name=gate x.min=0.25 lenght=0.5,elec num=1 name=source y.min=0 left length=0.25,elec num=2 name=drain y.min=0 right length=0.25,elec name=anode top,elec name=cathode bottom,例句,doping,Doping,定义掺杂分布,*,Silvaco,学习,9,doping ,分布:,uniform,gaussian,erfc,,具体设置还可分为三组,1,,,Concentration and junction,2,,,Dose and characteristic,3,,,Concentration and characteristic,杂质类型:,n.type,p.type,位置:,region,x.min,x.max,y.min,y.max,peak,junction,Doping,例句,*,Silvaco,学习,10,doping uniform conc=1e16 n.type region=1,doping region=1 gaussian conc=1e18 peak=0.1 characteristic=0.05,p.type x.left=0.0 x.right=1.0,doping region=1 gauss conc=1e18 peak=0.2 junct=0.15,doping x.min=0.0 x.max=1.0 y.min=0.0 y.max=1.0 n.type ascii,infile=concdata,均匀掺杂,高斯分布,从文件导入杂质分布,ATLAS,描述的二极管结构,*,Silvaco,学习,11,go atlas,mesh,x.mesh loc=0.00 spac=0.05,x.mesh loc=0.10 spac=0.05,y.mesh loc=0.00 spac=0.20,y.mesh loc=1.00 spac=0.01,y.mesh loc=2.00 spac=0.20,region number=1 x.min=0.0 x.max=0.1 y.min=0.0,y.max=1.0 material=silicon,region number=2 x.min=0.0 x.max=0.1 y.min=1.0,y.max=2.0 material=silicon,electrode name=anode top,electrode name=cathode bottom,doping uniform conc=1e18 n.type region=1,doping uniform conc=1e18 p.type region=2,save outfile=diode_0.str,tonyplot diode_0.str,DevEdit,编辑器件结构,*,Silvaco,学习,12,Work area,Defining region,Mesh creation,Save the file,Defining region,添加、替换或删除区域,主要参数:,区域,ID(region=),、材料,(material=),、区域坐标,(points=“0,0 0,1”),*,Silvaco,学习,13,Region reg=1 mat=silicon color=0 xffb2 pattern=0 x9,points=“0,0 0.1,0 0.1,1 0,1 0,0”,Region reg=3 name=anode material=contact elec.id=1,work.func=0 points=“0,0 0.1,0 0.1,1 0,1 0,0”,例句,Defining impurity,定义某区域的掺杂,主要参数,序号,:,Id,region.id,掺杂:,impurity,resistivity,杂质分布:,peak.value,reference.value,combination.function,concentration.function.y|x|z,x1,x2,y1,y2,rolloff.y,coc.func.y,*,Silvaco,学习,14,impurity,*,Silvaco,学习,15,Peak.value,为杂质浓度,reference.value,为一定,距离后的杂质浓度,“Gaussian”,“Gaussian(Dist)”,“Error Function”,“Error Function(Dist)”,“Linear(Dist)”,“Logarithmic”log,“Logarithmic(Dist)”,“Exponential,“Exponential(Dist)”,“Step Function”,分布类型有:,Rolloff.y|x|z,为,浓度变化的方向,Impurity,例子,*,Silvaco,学习,16,impurity id=1 region.id=1 imp=Donors,x1=0 x2=0.1 y1=0 y2=1,peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply,rolloff.y=both conc.func.y=Constant,rolloff.x=both conc.func.x=Constant,impurity id=2 region.id=4 imp=Composition Fraction X,x1=0 x2=0 y1=0 y2=0,peak.value=0.47 comb.func=Multiply,rolloff.y=both conc.func.y=Constant,rolloff.x=both conc.func.x=Constant,Defining mesh,Base.mesh,,网格整体控制,参数有,height,width,,矩形的最大高度和宽度,Bound.conditioning,,减少边界的网格点,Constr.mesh,,对网格中三角形做限制,主要参数:,X1,x2,y1,y2,max|min.height|ratio|width,*,Silvaco,学习,17,Mesh,例句,*,Silvaco,学习,18,base.mesh height=0.1 width=0.125,#,bound.cond max.slope=28 max.ratio=300 rnd.unit=0.001 ,line.straightening=1 align.points when=automatic,#,constr.mesh mat.type=semiconductor max.angle=180 max.ratio=200,max.height=1 max.width=1 min.height=0.001 min.width=0.001,#,constr.mesh x1=0 x2=0.1 y1=0.0 y2=1 max.height=0.08 min.width=0.01,constr.mesh x1=0.01 x2=0.11 y1=1 y2=2 max.height=0.1 min.width=0.01,mesh,Devedit,编辑二极管结构的例子,*,Silvaco,学习,19,go devedit,#,region reg=1 mat=silicon color=0 xffb2 pattern=0 x9,points=“0,0 0.1,0 0.1,1 0,1 0,0”,impurity id=1 region.id=1 imp=Donors,x1=0 x2=0.1 y1=0 y2=1,peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply,rolloff.y=both conc.func.y=Constant,rolloff.x=both conc.func.x=Constant,region reg=2 mat=silicon color=0 xffb2 pattern=0 x9,points=“0.01,1 0.11,1 0.11,2 0.01,2 0.01,1”,impurity id=1 region.id=2 imp=acceptors,x1=0.01 x2=0.11 y1=1 y2=2,peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply,rolloff.y=both conc.func.y=Constant,rolloff.x=both conc.func.x=Constant,Devedit,编辑二极管结构的例子,*,Silvaco,学习,20,#electrode,region reg=3 name=anode mat=contact elec.id=1 work.func=0,points=“0,0 0.1,0 0.1,0.01 0,0.01 0,0”,region reg=4 name=cathode mat=contact elec.id=2 work.fu
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