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,Copyright BOE Technology Group,*,/28,Company Confidential,*,B2 Project Team,*,Array,工艺技术简介,Array,工艺构成,Thin-Film-,EQP,-L/UL Chamber,:在,ATM,和,Vacuum,两个状态之间传送,Glass,的,Chamber,-Transfer Chamber,:把玻璃基板在各个周边的,Chamber,之间进行传送的,Chamber,,内有一个,Vacuum Robot,。,-Sputter Chamber,:进行,Deposition,的,Chamber,。,Sputter Chamber,的主要构成有:,-Platen,:用来放玻璃基板,(Gate,有,2,个,SD,、,ITO,为,1,个),-Cathode,:包括,Target、Shield、Magnet Bar,等构成部分,-Motor:,有,Plate,转动的,Motor、Plate,升降的,Cylinder,、,Cathode,开关的,Motor、Magnetic Bar,运动的,Motor,等。,Sputter-SP Chamber,System Components,Automated cassette load station ACLS(optional),The system hardware consists of three major components:,Mainframe,Remote modules,Remote Support Equipment,Heat Exchanger,The heat exchanger provides DI water to the RF match for cooling purposes,Process Pumps,Provides vacuum to the process chambers,RF generator,The RF generator supplies Radio Frequency to the process chamber for the purpose of creating a plasma,Mainframe Pump,Provides vacuum to the transfer and,loadlock,chambers.,Remote AC Power Box,Facility power is connected from customer facilities to the remote AC power box on the remote service module,All electrical power to the system is distributed from the AC power box,Deposition-PECVD,GAS IN,Plasma,GAS OUT,Glass,RF Power,13.56MHz,SiH4,NH3,PH3,等,4EA GND,Diffuser,Susceptor,Process chamber,Deposition-PECVD,ACLS,Automatic Cassette Load Station,Load lock Chamber,Transfer Chamber(X-,Fer,),Process Chamber,Layer,名称,使用气体,描述,Multi,GH,SiH4+NH3+N2,对,Gate,信号线进行保护和绝缘的作用,GL,AL,SiH4+H2,在,TFT,器件中起到开关作用,AH,NP,SiH4+PH3+H2,减小,a-,Si,层与,S/D,信号线的电阻,PVX,SiNx,SiH4+NH3+N2,对,S/D,信号线进行保护,PECVD,所做各层膜概要,SiN,X,绝缘膜:,通过,SiH,4,与,NH,3,混合气体作为反应气体,生成等离子体在衬底上成膜。,a-,Si:H,有源层膜:,SiH,4,气体在反应室中,经过一系列初级、次级反应,生成包括离子、子活性基 团等较复杂的反应产物,最终生成,a-,Si:H,薄膜沉积在衬底上,其中直接参与薄膜生长的主要是一些中性产物,SiH,n,(,n,为,0,3,),n,+,a-,Si:H,欧姆接触层:,在,SiH,4,气体中参入少量,PH,3,气体在衬底上成膜。,PECVD,绝缘膜、有源膜成膜机理,a-,Si:H,:,低隙态密度、深能级杂质少、高迁移率、暗态电阻率高,(2)a-,SiN,x,:H,:,i.,作为介质层和绝缘层,介电常数适中,耐压能力强,电阻率高,固定电荷少,稳定性好,含富氮材料,针孔少,厚度均匀。,ii.,作为钝化层,密度较高,针孔少。,(3)n,+,a-,Si,:,具有较高的电导率,较低的电导激活能,较高的参杂效率,形成微晶薄膜。,-,成膜机理,-,膜性能要求,Etch,Etch Rate,Requirement,Items,Uniformity,Selectivity,Profile,CD Bias,Requirement Items of Wet Etch,FICD Size,Glass SUBSTRATE,FILM,DICD Size,PHOTOTESIST,CD BIAS,|DICD,FICD|,说明:,1,、,CD,:,Critical Dimension,DICD,:,Development Inspection CD,,,PR,间距离(有,PR,),FICD,:,Final Inspection CD,,刻蚀完后,无,PR,。,OL:,各,mask,之间对位的偏差。,2,、干法刻蚀主要以垂直方式刻蚀,,CD BIAS,较小;,湿法刻蚀水平方向的刻蚀多于干法刻蚀,,CD BIAS,较大,CD,CD,机(,critical dimension,)主要测试,mask,后各种,CD,(包括,DICD,和,FICD,)和,OL,。,gate,active,data,VIA,ITO,DICD:22.5,1.0um,DICD:3.5,1.0um,DICD:3.5,1.0um,DICD:6.5,1.5um,DICD:14.0,1.0um,FICD:20.0,1.0um,FICD:2.5,1.0um,FICD:6.0,1.0um,FICD:9.5,2.0um,FICD:16.0,1.0um,Stitch:1.5um,OL:1.5um,OL:1.5um,OL:1.5um,OL:1.5um,CD,Etch Process,Isotropic,&,Anisotropic,Isotropic(,各向同性,):,指各个方向的刻蚀率是相同的,所有的,Wet Etch,和部分,Plasma Etch,为,Isotropic,Substrate,Oxide,Oxide,Oxide,Resist,Resist,Resist,Anisotropic(,各向异性,):,指一个方向的刻蚀,刻蚀后的内壁基本为垂直的,Anisotropic,只能通过,Plasma Etch,Substrate,Oxide,Oxide,Resist,Resist,Resist,Wet Etch-,Gate,SD,ITO,刻蚀液种类及配比:,H,3,PO,4,:CH,3,COOH:HNO,3,:H,2,O=72:10:2:16 wt%,Al,:,4AL+2HNO3 2AL2O3+N2+H2,2H3PO4+AL2O3 2AL(PO4)+3H2O,Nd,:4Nd+2HNO3,2Nd2O3+N2+H2,2H3PO4+Nd2O3 2Nd(PO4)+3H2O,Mo,:,4Mo+2HNO3 2Mo2O3+N2+H2,2H3PO4+Mo2O3 2Mo(PO4)+3H2O,化学反应式:,刻蚀液种类及配比:,HCl,:CH3COOH:H2O=22:6:72 wt%,化学反应式:,InSnO,:,InSnO2+4HCL InCl3+SnCl+2H2O,CH3COOH,缓冲,调节浓度,H2O,减少,ETCHANT,粘性,Wet Etch,Etch Process,Rinsing Process,Dry Process,PR Mask,后,利用化学药剂去除薄膜形成的,Pattern,,主要适用于金属膜或,ITO Pattern,的形成。,L/UL Chamber,连接真空和大气压的一个,Chamber,。,Glass,进入此,Chamber,以后,,Valve,关闭,开始抽真空。,M/L Chamber,将,L/UL Chamber,中的,Glass,通过机械手送到反应舱中,在此,Chamber,中也要进一步抽真空。,Process Chamber,利用,Plassma,原理在反应舱中通入反应气体,生成的反应气体粒子撞击镀膜表面,达到刻蚀的目的。,利用真空气体和,RF Power,生成的,Gas Plasma,反应产生原子和原子团,该原子和原子团与淀积在基板上的物质反应生成挥发性物质。利用该原理可进行干法刻蚀。,Dry Etch,Process Chamber,结构示意图,相关部件,用途,RF Generator,Radio Frequency Generator,提供高频能量,Matching Box,将,RF Generator,产生的高频波能量有效的传给,chamber,MFC,Mass Flow Controller,控制,Gas,的流量,每种气体对应一个,MFC,Chiller,调节,Chamber,壁的温度,一般分三部分,:Top,Bottom,Wall,CM,控制,Process Chamber,的气体压力,根据控制压力的不同可分为,:CM1,和,CM2,APC,Adaptive,P,ressure,C,ontroller,控制管道的开口大小,以此来控制,Process Chamber,压力,TMP And,Dry Pump,抽真空的装置,TMP,比,Dry Pump,抽得更快,抽到的真空度大,Cut Off,三通口开关,Chiller,Plasma,上部电极,下部电极,Process Gas,RF Generator,Cut Off,慢抽管,Matching Box,Dry Etch,RF Power,增大,,Etch Profile,有变小的倾向。,RF Power,增大,整体的,E/R,也增大。可用于改善,Uniformity,效果。,RF Power,越大,,SiNx,与,Mo,的,Selectivity,越小。,Pressure大的情况下化学反应占优势,因此会使Profile也相应变大,。,Pressure,增大,基板中心部分,E/R,增大;周边部分,E/R,减小。,Pressure,增加,,Selectivity,增大(,10,)。随着,Pressure,增大,,Uniformity,也会提高。,Wet Strip,STRIP,就是利用腐蚀液经过化学反应去掉膜上面的光刻胶。化学反应主要是把光刻胶的长链结构断开,从而达到去除的目的。,醚,类,(,Dietylene,Glycol,Monoethye,Ether,),CH3CH2O(CH2)2O(CH2)2OHC6H1403,PR,中的对,Resin,的选择度大,;,胺类,(,MEA,),打破,PR,与,Resin,的,Cross-Link,结合,酮类,NMP,(Normal Methyl 2-Pyrrolidone:C5H9NO)Solubility,将分掉的,Acid,溶解,;,表面活化剂,(,Surfactant),促进,PR,在,Chemical,中溶解,.,目的:通过改变,a-,Si,的晶格结构和减弱消除金属的应力(让分子剧烈运动,达到 均匀分布的作用)来使得,TFT,器件性能更加稳定。,Temperature,:,250,下保持,20,分钟;将温度降到,23,用,7,分钟。,Anneal,加热仓,降温
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