半导体制程技术导论Chapter 2简介

Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,Hong Xiao, Ph. D.,www2.austin.cc.tx.us/HongXiao/Book.htm,*,Chapter 2,積體電路生產的簡介,Hong,Xiao, Ph. D.,hxiao89,Hong Xiao, Ph. D.,1,www2.austin.cc.tx.us/HongXiao/Book.htm,目標,定義極解釋良率的重要性,描述無塵室的基本佈局圖.,解釋無塵室協議規範的重要性,列出在積體電路製程的四種基本操作方式,列出至少六種在積體電路生產廠房內的製程區間名稱,解釋晶片封裝的目的,描述標準的打線接合製程與覆晶接合製程,Hong Xiao, Ph. D.,2,www2.austin.cc.tx.us/HongXiao/Book.htm,積體電路生產流程,材料,設計,光罩,積體電路生產廠房,測試,封裝,最後測試,加熱,製程,微影製程,離子佈植與光阻剝除,金屬化,化學機械研磨,介電質沉積,晶圓,蝕刻與光阻剝除,Hong Xiao, Ph. D.,3,www2.austin.cc.tx.us/HongXiao/Book.htm,生產廠房的成本,生產廠房的成本非常高，八吋晶圓的生產廠房成本, $1B,無塵室,設備, 每一項工具經常, $1M,材料, 高純度,超高程度,設施,人員, 訓練和薪酬,Hong Xiao, Ph. D.,4,www2.austin.cc.tx.us/HongXiao/Book.htm,晶圓良率,Hong Xiao, Ph. D.,5,www2.austin.cc.tx.us/HongXiao/Book.htm,晶粒良率,Hong Xiao, Ph. D.,6,www2.austin.cc.tx.us/HongXiao/Book.htm,封裝良率,Hong Xiao, Ph. D.,7,www2.austin.cc.tx.us/HongXiao/Book.htm,整體的良率,Y,T,=,Y,W,Y,D,Y,C,整體的良率可以決定一間生產工廠是賺錢還是賠錢,Hong Xiao, Ph. D.,8,www2.austin.cc.tx.us/HongXiao/Book.htm,生產廠房為何賺(賠)錢,成本:,晶圓 (8”): $150/晶圓,*,處理: $1200 ($2/晶圓/步驟, 600,步驟,),封裝: $5/晶片,銷售:,200,晶片/晶圓,$50/,晶片 (,2000,年的低階處理器),*晶圓成本,每片晶圓的晶片數,以及晶片價格的變動,此處的數字是隨機一般獲得的資訊,Hong Xiao, Ph. D.,9,www2.austin.cc.tx.us/HongXiao/Book.htm,生產工廠如何賺,(,賠,) 錢,100% 良率,: 150+1200+1000 = $2350/,晶圓,50%,良率: 150+1200+500 = $1850/晶圓,0%,良率: 150+1200 = $1350/晶圓,100%,良率,: 200,50 = $10,000/,晶圓,50%,良率,: 100,50 = $5,000/,晶圓,0%,良率,: 0,50 = $0.00/,晶圓,100%,良率,: 10000,-,2350 = $7650/,晶圓,50%,良率,: 5000,-,1850 = $3150/wafer,0%,良率,: 0,-,1350 = $1350/,晶圓,成本:,銷售:,獲利,空間:,Hong Xiao, Ph. D.,10,www2.austin.cc.tx.us/HongXiao/Book.htm,Question,假如積體電路製造的每一道製程步驟的晶粒良率都是99%，而且共有600道製程步驟，試問整體的晶粒良率是多少?,Hong Xiao, Ph. D.,11,www2.austin.cc.tx.us/HongXiao/Book.htm,解答,相當於99% 自乘,600,次,0.99,600,= 0.0024 = 0.24%,幾乎沒有良率可言!,Hong Xiao, Ph. D.,12,www2.austin.cc.tx.us/HongXiao/Book.htm,生產量,可以生產的晶圓數量,生產工廠: 晶圓,/,月 (典型值,10,000),工具:晶圓,/,小時 (典型值,60),高良率, 高產量,Hong Xiao, Ph. D.,13,www2.austin.cc.tx.us/HongXiao/Book.htm,缺陷與良率,Hong Xiao, Ph. D.,14,www2.austin.cc.tx.us/HongXiao/Book.htm,良率和晶粒尺寸,Y,= 28/32 = 87.5%,Y,= 2/6 = 33.3%,殺手缺陷,Hong Xiao, Ph. D.,15,www2.austin.cc.tx.us/HongXiao/Book.htm,晶圓產品的解說,晶粒,Hong Xiao, Ph. D.,16,www2.austin.cc.tx.us/HongXiao/Book.htm,晶圓產品的解說,切割道,晶粒,測試結構,Hong Xiao, Ph. D.,17,www2.austin.cc.tx.us/HongXiao/Book.htm,無塵室,低粒子數的人造環境,最初的無塵室是為了醫院手術房而建的,粒子是良率的殺手,積體電路製造必須在無塵室中進行,Hong Xiao, Ph. D.,18,www2.austin.cc.tx.us/HongXiao/Book.htm,無塵室,最初的無塵室是為了醫院手術房而建的,1950,年之後半導體工業採用本項技術,越小的圖形尺寸就需要純淨度更高的無塵室,粒子數越少，造價越高,Hong Xiao, Ph. D.,19,www2.austin.cc.tx.us/HongXiao/Book.htm,無塵室等級,等級 10：每立方英尺內其直徑大於0.5微米的微粒數目必須小於10顆,等級 1 ：每立方英尺內其直徑大於0.5微米的微粒數目必須小於1顆,0.18,mm,元件需要高於等級1以上的無塵室,Hong Xiao, Ph. D.,20,www2.austin.cc.tx.us/HongXiao/Book.htm,無塵室等級,0.1,1,10,100,1000,10000,100000,Class 100,000,Class 10,000,Class 1,000,Class 100,Class 10,Class 1,粒子總數 / 立方英尺,0.1,1.0,10,以微米為單位的粒子尺寸,Class M-1,Hong Xiao, Ph. D.,21,www2.austin.cc.tx.us/HongXiao/Book.htm,依聯邦標準209,E,定義所制定之空氣含微粒子的潔凈等級表,等級,粒子 / 立方英尺,0.1,m,m,0.2,m,m,0.3,m,m,0.5,m,m,5,m,m,M-1,9.8,2.12,0.865,0.28,1,35,7.5,3,1,10,350,75,30,10,100,750,300,100,1000,1000,7,10000,10000,70,Hong Xiao, Ph. D.,22,www2.austin.cc.tx.us/HongXiao/Book.htm,光罩上粒子污染效應,光罩上的粒子,正光阻上的殘留物,負光阻上的洞孔,薄膜,薄膜,基片,基片,Hong Xiao, Ph. D.,23,www2.austin.cc.tx.us/HongXiao/Book.htm,粒子污染的效應,局部佈植的接面,微粒,離子束,光阻,屏蔽氧化層,光阻中的摻雜物,Hong Xiao, Ph. D.,24,www2.austin.cc.tx.us/HongXiao/Book.htm,無塵室結構,製程區,設備區 1000級,設備區 1000級,孔狀框型高架地板,回風,HEPA,過濾網,風扇,幫浦、電力供應系統,製程工具,製程工具,補充空氣,補充空氣,1,級,Hong Xiao, Ph. D.,25,www2.austin.cc.tx.us/HongXiao/Book.htm,最少化微粒環境,等級1000的無塵室,較低的成本,董事長會議室的安排方式,製程和設備之間無牆面阻隔,在晶圓和製程工具的周圍環境較等級1佳,製程工具間晶圓轉移自動化,Hong Xiao, Ph. D.,26,www2.austin.cc.tx.us/HongXiao/Book.htm,最少化微粒環境的無塵室,設備區 1000級,設備區 1000級,孔狀框型高架地板,回風,HEPA,過濾網,風扇,幫浦、電力供應系統,製程工具,補充空氣,補充空氣,製程工具,HEPA,過濾網,1,級,Hong Xiao, Ph. D.,27,www2.austin.cc.tx.us/HongXiao/Book.htm,更衣區,無塵衣掛架,長椅,手套、髮套和鞋套架,棄物箱,刷洗 / 清潔位置,儲物區,手套架,手套架,入口,往無塵室,Hong Xiao, Ph. D.,28,www2.austin.cc.tx.us/HongXiao/Book.htm,積體電路製程流程圖,微影技術,薄膜成長、沉積，且(或)化學機械研磨,蝕刻,光阻剝除,光阻剝除,離子佈植,快速高溫回火或擴散,Hong Xiao, Ph. D.,29,www2.austin.cc.tx.us/HongXiao/Book.htm,半導體生產工廠的平面圖,製程區間,更衣區,走道,設備區,拉門,服務區,Hong Xiao, Ph. D.,30,www2.austin.cc.tx.us/HongXiao/Book.htm,半導體生產工廠基本平面圖,更衣區,緊急出口,服務區,製程和度量工具,Hong Xiao, Ph. D.,31,www2.austin.cc.tx.us/HongXiao/Book.htm,濕式製程,乾燥,蝕刻、光阻塗佈或清洗,沖洗,Hong Xiao, Ph. D.,32,www2.austin.cc.tx.us/HongXiao/Book.htm,中心帶區,平帶區,距離,溫度,加熱線圈,石英管,氣流,晶圓,水平爐管,Hong Xiao, Ph. D.,33,www2.austin.cc.tx.us/HongXiao/Book.htm,垂直爐管,製程反應室,晶圓,塔狀承座,加熱器,Hong Xiao, Ph. D.,34,www2.austin.cc.tx.us/HongXiao/Book.htm,軌道步進機整合示意圖,加熱平台,底層塗佈反應室,冷卻平台,冷卻平台,自旋塗佈站,顯影站,步進機,晶圓移動方向,晶圓,Hong Xiao, Ph. D.,35,www2.austin.cc.tx.us/HongXiao/Book.htm,具備蝕刻和光阻剝除反應室的群集工具,轉換室,光阻剝除反應室,裝載站,蝕刻反應室,光阻剝除反應室,蝕刻反應室,卸載站,機械手臂,Hong Xiao, Ph. D.,36,www2.austin.cc.tx.us/HongXiao/Book.htm,具備介電質化學氣相沉積(,CVD),及回蝕刻反應室的群集工具,轉換室,裝載站,PECVD,反應室,O,3,-TOES,反應室,卸載站,機械手臂,Ar,離子濺射室,Hong Xiao, Ph. D.,37,www2.austin.cc.tx.us/HongXiao/Book.htm,具有氣相沉積(,PVD),反應室的群集工具,轉換室,裝載站,Ti,/TiN,反應室,Al,Cu,反應室,卸載站,機械手臂,Al,Cu,反應室,Ti,/TiN,反應室,Hong Xiao, Ph. D.,38,www2.austin.cc.tx.us/HongXiao/Book.htm,乾進、乾出多研磨頭的化學機械研磨(,CMP),系統,晶圓裝載及等待位置,CMP,後段清潔位置,清洗位置,乾燥及晶圓卸載位置,多研磨頭研磨機,研磨襯墊,清潔機台,研磨頭,Hong Xiao, Ph. D.,39,www2.austin.cc.tx.us/HongXiao/Book.htm,製程區和設備區,製程區,設備區,設備區,製程工具,電腦桌與度量工具桌,服務區,拉門,晶圓裝載門,Hong Xiao, Ph. D.,40,www2.austin.cc.tx.us/HongXiao/Book.htm,測試結果,失效晶粒,Hong Xiao, Ph. D.,41,www2.austin.cc.tx.us/HongXiao/Book.htm,晶片接合結構,矽晶片,晶片背面金屬化,焊接材料,基片金屬化,基片(金屬或陶瓷),微電子元件和電路,融熔及,凝固,Hong Xiao, Ph. D.,42,www2.austin.cc.tx.us/HongXiao/Book.htm,打線接合製程,金屬線,形成融熔金屬球,接合墊片,接合墊片,接合墊片,緊壓使之連結接合墊片,打線頭退返,線夾,Hong Xiao, Ph. D.,43,www2.austin.cc.tx.us/HongXiao/Book.htm,打線接合製程,引線,接合墊片,接合墊片,引線,施壓及加熱使金屬線連結引線,線夾閉合加熱以截斷金屬線,Hong Xiao, Ph. D.,44,www2.austin.cc.tx.us/HongXiao/Book.htm,帶有接合墊片的積體電路晶片,接合墊片,Hong Xiao, Ph. D.,45,www2.austin.cc.tx.us/HongXiao/Book.htm,IC,晶片封裝,引線端,晶片,接合墊片,Hong Xiao, Ph. D.,46,www2.austin.cc.tx.us/HongXiao/Book.htm,具有金屬凸塊的積體電路晶片,凸塊,Hong Xiao, Ph. D.,47,www2.austin.cc.tx.us/HongXiao/Book.htm,覆晶封裝,晶片,凸塊,插座,引線端,Hong Xiao, Ph. D.,48,www2.austin.cc.tx.us/HongXiao/Book.htm,凸塊接觸,晶片,凸塊,插座,引線端,Hong Xiao, Ph. D.,49,www2.austin.cc.tx.us/HongXiao/Book.htm,加熱和凸塊融熔,晶片,凸塊,插座,引線端,Hong Xiao, Ph. D.,50,www2.austin.cc.tx.us/HongXiao/Book.htm,覆晶封裝技術,晶片,插座,引線端,Hong Xiao, Ph. D.,51,www2.austin.cc.tx.us/HongXiao/Book.htm,塑膠封裝的封膠空腔截面圖,接合線,IC,晶片,腳架,Pins,晶片接合金屬化,頂部凹槽,底部凹槽,封膠空腔,Hong Xiao, Ph. D.,52,www2.austin.cc.tx.us/HongXiao/Book.htm,陶瓷封裝,陶瓷覆蓋層,接合線,IC,晶片,引線架, 第,1,層,引線端,覆蓋層,密封金屬化,晶片接合金屬化,第 2 層,第 2 層,Hong Xiao, Ph. D.,53,www2.austin.cc.tx.us/HongXiao/Book.htm,概要,整體良率,良率決定生產工廠的盈虧,無塵室和無塵室協議規範,製程區間,製程, 設備, 以及設備區,晶粒測試, 晶圓薄化,晶粒分離, 晶片封裝,以及最後測試,Hong Xiao, Ph. D.,54,www2.austin.cc.tx.us/HongXiao/Book.htm,