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REGIONThe REGION statement defines the location of materials in a rectangular mesh.REGION NAME Materials LocationNAME= Semiconductor MaterialsSILICON 硅GAAS 砷化镓POLYSILI 多晶硅GERMANIU 锗SIC 碳化硅SEMICOND 半导体SIGE 锗硅ALGAAS 铝镓砷A-SILICO 多晶硅DIAMOND 金刚石HGCDTE INAS INGAASINP S.OXIDE ZNSE ZNTE ALINAS GAASP INGAP INASP Insulator MaterialsOXIDE NITRIDE SAPPHIRE OXYNITRI INSULATO Location Case1: X.MIN= X.MAX= Y.MIN= Y.MAX= IX.MIN= IX.MAX= IY.MIN= IY.MAX= Case 2: ROTATE R.INNER= R.OUTER= X.CENTER= Y.CENTER= Case 3: POLYGON X.POLY= Y.POLY= The following REGION statements may be used to define the material regions for a MOSFET that has an interface between oxide and silicon at y=0. In this example, the silicon region was named “Body” and the oxide region was named“SiO2”:REGION NAME=Body SILICONREGION NAME=Si02 OXIDE Y.MAX=0Si SiO2 Polygon region A polygon can be specified which defines boundaries of a region. The following statement could be used to specify a triangular polysilicon region:REGION NAME=STRANGE POLYGON POLY+ X.POLY=(1, 2, 3)+ Y.POLY=(1, 2, 1)Circular regionA circular region can be defined by specifying a 0 parameter. The following statement could be used to specify a donut-shaped nitride region with a center at x=0 and y=0, internal radius of 0.5 micron and external radius of 1 micron:A zero internal radius would convert a donut-shaped region into a circular one. REGION NAME=RING ROTATE NITRIDE+ X.CENTER=0 Y.CENTER=0+ R.INNER=0.5 R.OUTER=1 ELECTRODEThe ELECTRODE statement specifies the placement of electrodes in a devicestructure. ELECTRODE NAME= LOCAL ELECTRODENAME= VOID TOP | BOTTOM | LEFT | RIGHT | INTERFAC | PERIMETE X.MIN= | IX.MIN= X.MAX= | IX.MAX= Y.MIN= | IY.MIN= Y.MAX= | IY.MAX= (ROTATE X.CENTER= Y.CENTER= R.INNER= R.OUTER=)| (POLYGON X.POLY= Y.POLY=) | REGION= ELECTROD NAME=Drain INTERFAC X.MIN=2.5ELECTROD NAME=Gate TOP X.MIN=1.0 X.MAX=2.0ELECTROD NAME=Source INTERFAC X.MAX=0.5ELECTROD NAME=Substrate BOTTOM ELECTROD NAME=RING ROTATE+ X.CENTER=0 Y.CENTER=0+ R.INNER=0.5 R.OUTER=1 A region name may be specified that is converted to an electrode. In this case, every node in the specified region becomes part of the electrode. As an example,the following statement converts region named Top_part into an electrode. The electrode name in this example is arbitrarily chosen to be Anode. ELECTROD NAME=Anode REGION=Top_part PROFILEThe PROFILE statement defines impurity profiles to be used in the device structure.Statement formatPROFILE type local Profiles Output type N-TYPE P-TYPE regionREGION=localX.MIN= WIDTH= | X.MAX= Y.MIN= DEPTH= | Y.MAX= Output Doping FileOUT.FILE= Uniform Profile Analytic or One-Dimensional Profiles from Data Files Two-Dimensional Profiles from Data Files Polygonal Profiles Rotated Profile Uniform ProfileUNIFORM N.PEAK= Analytic or One-Dimensional Profiles from Data Files| ( X.CHAR= | XY.RATIO= X.ERFC ( N.PEAK= | DOSE= Y.CHAR= | Y.JUNCTI= ) Two-Dimensional Profiles from Data Files| ( 2D.PROC | SUPRA | TSUPREM4| ( 2D.ASCII X.COLUMN= Y.COLUMN=N.COLUMN= P.COLUMN=)IN.FILE= N.OFFSET= X.OFFSET= Y.OFFSET=X.CHAR= X.ERFC Y.CHAR= Y.ERFC) Choosing Impurity Profiles to InputThe choice of which impurity profiles to input from the file is made by specifying either, both, or none of the parameters N-TYPE and P-TYPE. If neither parameter is specified, then both the donor and acceptor impurity profiles are read from the data file.If the impurity profiles are taken from a formatted file, the parameters N.COLUMN and P.COLUMN are used to identify columns of data containing net donor and/or net acceptor impurity concentration. As an example, the following PROFILE statements read in impurity profiles generated by TMA SUPREM-3 in order to specify the doping for an N-channelMOSFET:PROFILE P-TYPE 1D.PROC IN.FILE=CHANNEL PROFILE N-TYPE 1D.PROC IN.FILE=SRCDRN X.MIN=0 WIDTH=1+ XY.RATIO=.8PROFILE N-TYPE 1D.PROC IN.FILE=SRCDRN X.MIN=3 WIDTH=1+ XY.RATIO=.8 Two-Dimensional Profiles From Data FilesThe entire two-dimensional impurity profile may be input from a data file by specifying the IN.FILE parameter and one parameter from the set 2D.PROC, SUPRA, TSUPREM4, and 2D.ASCII.By default the origin for the impurity profile is aligned with the origin in Medici.The X.OFFSET and Y.OFFSET parameters may be used to shift the two-dimensional impurity profile relative to Medici structure. Polygonal Profiles( N.PEAK= POLYGON X.POLY= Y.POLY= N.CHAR= N.ERFC )Rotated Profile(N.PEAK= ROTATE X.CENTER= Y.CENTER= R.INNER=R.OUTER= R.CHAR= R.ERFC) COMMENT Specify impurity profiles and fixed chargePROFILE P-TYPE N.PEAK=3E15 UNIFORM OUT.FILE=MDEX1DSPROFILE P-TYPE N.PEAK=2E16 Y.CHAR=.25PROFILE N-TYPE N.PEAK=2E20 Y.JUNC=.34 X.MIN=0.0 WIDTH=.5+ XY.RAT=.75PROFILE N-TYPE N.PEAK=2E20 Y.JUNC=.34 X.MIN=2.5 WIDTH=.5+ XY.RAT=.75 REGRIDThe REGRID statement allows refinement of a coarse mesh.REGRID Regrid-Criteria Regrid-Controls Local OutputLocalX.MIN= X.MAX= Y.MIN= Y.MAX=REGION= IGNORE= COS.ANGL=Output OUT.FILE= NO.TTINF ASCII Regrid Criteria POTENTIA | ( E.FIELD X.COMPON | Y.COMPON ) | QFN | QFP| DOPING | ELECTRON | HOLES | NET.CHAR | NET.CARR| ( MIN.CARR LOCALDOP ) | II.GENER | BB.GENER | PHOTOGEN| ELE.TEMP | HOL.TEMP | TRUNC | ARRAY1 | ARRAY2 | ARRAY3 Regrid Controls(RATIO= | FACTOR=) IN.FILE=CHANGE ABSOLUTE LOGARITH MAX.LEVE= SMOOTH.K= REGRID DOPING LOG IGNORE=OXIDE RATIO=2 SMOOTH=1+ IN.FILE=MDEX1DS REGRID POTEN IGNORE=OXIDE RATIO=.2 MAX=1 SMOOTH=1+ IN.FILE=MDEX1DS
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