硅片平整度知识介绍课件

硅片平整度知识介绍课件硅片平整度知识讨论IQC 2006-4-20硅片平整度知识介绍课件硅片平整度知识讨论主要内容如下：主要内容如下：1、硅片平整度定义；、硅片平整度定义；2、硅片平整度测量；、硅片平整度测量；3、硅片平整度规范、硅片平整度规范4、硅片使用中异常举例、硅片使用中异常举例硅片平整度知识介绍课件平整度SEMI 标准 关键字注释习惯用语SEMI 标准用语新SEMI 标准 关键字注释TTVGBIR Global flatness back ideal rangeTIR GFLRGlobal flatness front least-squares rangeSTIRSFQRSite flatness front least-squares rangeLTVSBIRSite flatness back ideal rangeFPDGFLDGF3DGlobal flatness front least-squares deviationGlobal flatness front 3 point deviation硅片平整度知识介绍课件TTV(Total Thickness Variation)定义：定义：TTV=a b (SEMI标准中为标准中为GBIR )说明：1.参考平面 B为Wafer背面硅片平整度知识介绍课件TIR(Total Indicator Reading)定义：定义：TIR=|a|+|b|(SEMI标准中为标准中为GFLR )说明：1.参考平面(bf)G为距上表面所有点截距之和最小的平面；硅片平整度知识介绍课件FPD(Focal Plane Deviation)定义：定义：FPD=Max(|a|,|b|)(SEMI标准中为标准中为GFLD )说明：1.如果|a|b|，则FPD取正值；反之取负值；2.参考平面G(bf)为距Wafer上表面所有点截距之和最小的平面；硅片平整度知识介绍课件Warp定义：定义：Warp=|a|+|b|说明：1.参考平面M为距曲面Median plane所有点截距之和最小的平面；2.不考虑重力影响；硅片平整度知识介绍课件Bow定义：定义：Bow=1/2*(b-f)说明：1.参考平面 W 以Wafer上三点确定，此三点组成一等边三角形2.凸的Wafer Bow值为正，凹的Wafer Bow值为负；3mm120120硅片平整度知识介绍课件LTV(Local Thickness Variation)定义：定义：LTVi=ai bi i=1,2,3,4,.,n(SEMI标准中为标准中为SBIR)说明：1.参考平面B为Wafer背面；2.LTV max=Max(LTV1,LTV2,.,LTVn)硅片平整度知识介绍课件STIR(Site Total Indicator Reading)定义：定义：STIRi=|ai|+|bi|i=1,2,3,4,.,n (SEMI标准中为标准中为SFLR)说明：1.参考平面G i通过每一单元块的中心且平行于wafer上表面的拟合平面bf G；2.G为距单元块上每一点截距最小的平面；3.STIR max=Max(STIR1,STIR2,.,STIR n)；硅片平整度知识介绍课件STIR/L-Site(Site Total Indicator Reading)定义：定义：STIRi/L=|ai|+|bi|i=1,2,3,4,.,n (SEMI标准中为标准中为SFQR)说明：1.参考平面bf G i为距单元块上每一点截距最小的平面；2.STIRi/L max=Max(STIR1/L,STIR2/L,.,STIRn/L)；硅片平整度知识介绍课件SFPD/L-Site定义：定义：SFPD i/L=Max(|ai|,|bi|)i=1,2,3,4,.,n (SEMI标准中为标准中为SFQD)说明：1.|a|b|,取正值；|a|b|,取正值；|a|b|,取负值；2.参考平面G i通过每一单元块的中心且平行于wafer上表面的拟合平面bf G；3.SFPD/G max=Max(SFPD 1/G,SFPD 2/G,.,SFPD n/G)硅片平整度知识介绍课件SEMI StandardFQAMeasurementMethodReferenceSurfaceReferencePlane and AreaReferencePlane and AreaReferenceSurfaceSite SizeandArrayParameterParameterGBIRGF3RGF3DGFLRGFLDSF3RSF3DSFLRSFLDSFQRSFQDSBIRSBIDRangeRangeDeviationRangeDeviationRangeDeviationRangeDeviationRangeDeviationRangeDeviationParameterParameterParameterParameterParameterReferencePlane and AreaReferencePlane and AreaS-TIRS-FPDS-TIRS-FPDS-TIRS-FPDLTVS-FPDSemi用语現行习惯用语TTVTIRFPDTIRNTVFPDFront Ref.Center Focus3pointBest FitSite Best FitBack Ref.Center FocusSite FlatnessGlobal FlatnessFrontBackBackFront3Point3Point(全面)Ideal(全面)(最小二乗法)bfLeast Squares(全面)Least Squares(全面)(bf)Least Squares(site)Ideal(全面)参考面的选取(表面 or 背面)参考平面的設定(bf or 3pt)又称理想平面(Flatness Quality Area)硅片平整度知识介绍课件Flatness Tools Principle:Capacitance sensor(ADE)Wafertbcat=a-b-cRing Spacing Ri ng Spaci ng Sam pl i ng Data Poi nt ADE9300 3.81m m 400poi nt/ri ng 8,664 ADE9600 1.9m m 400poi nt/ri ng 22,134 ADE9850 0.95m m 400poi nt/ri ng 40,000 X-Y Resol uti on Ni kon 0.33m m/pi xel 290,000 硅片平整度知识介绍课件局部平整度测量边缘问题Partials Inactive Site Setup硅片平整度知识介绍课件局部平整度测量边缘问题Partials Active Site Setup Green lines indicates partial sites.硅片平整度知识介绍课件 两种方式测量结果差异举例-SFQD TrendChanged Measurement to Partial Sites ActiveChanging to Partial Sites Active Increased SFQD on a sample of Epi wafers Inactive 0.17um Active 0.24um硅片平整度知识介绍课件平整度SEMI 标准 ITEMSPOLISHED WAFER EPITAXIAL WAFER1.0um Design Rule Twin-Tub CMOS0.35um Design Rule Twin-Tub CMOS0.35um Design Rule DRAMTTV(GBIR)10um-5umTIR(GFLR)-3umSFQD-=0.5um18x18mm=0.23um22x22mm=0.35um22x22mmBOW60um-WARP60um-SEMI STANDARD FOR 150mm(SEMI M1 AND M11)硅片平整度知识介绍课件常用硅片STIR数值举例P15-25各硅片厂家STIR数据分布对比P15-25各硅片厂家STIR数据分布对比00.20.40.60.811.21.4ABC有研厂家STIRMAXMEANMIN硅片平整度知识介绍课件工艺过程硅片平整度变化00.511.522.51357911 13 15 17 19 21 23 251次擦片后2次一次/牺牲氧化后3次SIN后擦片后、一次/牺牲氧化（900C）后、SIN（700C）后采用光刻PENKIB1设备进行平整度测量，每片的平整度三次测量结论：数值差异不大 平整度有增大的趋势平整度有增大的趋势硅片平整度知识介绍课件聚焦异常Flatness Values测量TTVTIRBest FitSFPD Best FitBow Best FitWarp Best FitS1 Defocus5.6201.943-0.271-0.73 6.16S2 Defocus6.9552.443-0.241-20.6142.14S3 Defocus5.2332.363+0.314-17.0035.77S233.0301.600-0.292+0.51 7.31S25 OK2.8681.793-0.297-17.8238.35EPI Not Proc 3.0651.801-0.224-异常与异常与TTV相关相关硅片平整度知识介绍课件 聚焦异常Flatness Values测量SFQDSite Best FitCurrentSBIDBack RefSFLDFront RefBest FitSF3DFront Ref3 PointS1 Defocus-0.271-1.311-0.940-0.966S2 Defocus-0.241-1.649-1.204-1.262S3 Defocus+0.314-1.502-1.151-1.184S23-0.292-0.757-0.951-1.012S25 OK-0.297-1.043-0.940-1.035EPINot Proc-0.224-0.565-0.744-0.730defocus does not correspond to site flatness,such as SFQD,SBID,SFLD,and SF3D.