CMOS工艺流程讲解

Click to edit Master title style,Click to edit Master text styles,Second Level,Third Level,Fourth Level,Fifth Level,*,*,*,Wafer Fabrication,Process,Technology,CMOS,1,Content,0.5um CMOS process flow&cross section,0.18um CMOS process flow&cross section,PCM introduction,2,CMOS,Starting with a silicon wafer,Cross Section of the Silicon Wafer,Magnifying the Cross Section,3,CMOS,n/p-well Formation,Grow Thin Oxide,Deposit Nitride,Deposit Resist,silicon substrate,UV Exposure,Develop Resist,Etch Nitride,n-well Implant,Remove Resist,4,CMOS,n/p-well Formation,silicon substrate,Grow Oxide(n-well),Remove Nitride,p-well Implant,Remove Oxide,Twin-well Drive-in,p-well,n-well,Remove Drive-In Oxide,5,silicon substrate,p-well,n-well,CMOS,LOCOS Isolation,Grow Thin Oxide,Deposit Nitride,Deposit Resist,UV Exposure,Develop Resist,Etch Nitride,Remove Resist,6,CMOS,LOCOS Isolation,silicon substrate,p-well,n-well,Deposit Resist,UV Exposure,Develop Resist,Field Implant B,Remove Resist,Grow Field Oxide,Fox,Remove Nitride,Remove Oxide,7,silicon substrate,p-well,n-well,Grow Screen Oxide,CMOS,Transistor Fabrication,Vt Implant,Deposit Resist,UV Exposure,Develop Resist,Punchthrough Implant,Remove Resist,Remove Oxide,Fox,8,silicon substrate,p-well,n-well,Grow Gate Oxide,CMOS,Transistor Fabrication,Deposit PolySi,PolySi Implant,polySi,polySi,Deposit Resist,UV Exposure,Develop Resist,Etch PolySi,Remove Resist,Fox,9,silicon substrate,p-well,n-well,CMOS,Transistor Fabrication,Deposit Thin Oxide,Deposit Resist,UV Exposure,Develop Resist,n-LDD Implant,Remove Resist,Fox,polySi,polySi,10,silicon substrate,p-well,n-well,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,p-LDD Implant,Remove Resist,Deposit Spacer Oxide,Etch Spacer Oxide,Fox,polySi,polySi,11,silicon substrate,p-well,n-well,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,n+S/D Implant,n+,n+,Remove Resist,Fox,polySi,polySi,12,silicon substrate,p-well,n-well,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,p+S/D Implant,p+,p+,Remove Resist,Fox,polySi,polySi,n+,n+,13,silicon substrate,p-well,n-well,CMOS,Contacts&Interconnects,Deposit BPTEOS,BPTEOS,BPSG Reflow,Planarization Etchback,Deposit Resist,UV Exposure,Develop Resist,Contact Etchback,Remove Resist,Fox,polySi,polySi,n+,n+,p+,p+,14,silicon substrate,p-well,n-well,CMOS,Contacts&Interconnects,Depost Metal 1,Metal 1,Deposit Resist,UV Exposure,Develop Resist,Etch Metal 1,Remove Resist,Fox,polySi,polySi,p+,p+,n+,n+,BPTEOS,15,silicon substrate,p-well,n-well,CMOS,Contacts&Interconnects,Deposit IMD 1,IMD1,Deposit SOG,SOG,Planarization Etchback,Deposit Resist,UV Exposure,Develop Resist,Via Etch,Remove Resist,Fox,polySi,polySi,p+,p+,Metal 1,n+,n+,BPTEOS,16,silicon substrate,p-well,n-well,CMOS,Contacts&Interconnects,Deposit Metal 2,Metal 2,Metal 2,Deposit Resist,UV Exposure,Develop Resist,Etch Metal 2,Remove Resist,Deposit Passivation,Fox,polySi,polySi,p+,p+,Metal 1,n+,n+,BPTEOS,IMD1,SOG,Passivation,17,0.18um Process Cross section,Pad oxide,P Substrate,OD SiN,18,0.18um Process Cross section,P Substrate,19,0.18um Process Cross section,P Substrate,Pwell mask,Pwell,NAPT,VTN,B11 Pwell/NAPT/VTN Implant,Nwell mask,P31 Nwell/P_APT/VTP Implant,Nwell,PAPT,VTP,20,0.18um Process Cross section,P Substrate,Pwell,NAPT,VTN,Nwell,Nfield,PAPT,Mask 132,HF Wet dip and Grow Gate oxide-2,21,0.18um Process Cross section,Poly,NLDD,P Substrate,NLDD,Pwell,NAPT,VTN,Nwell,PAPT,VTP,Poly,NLDD implant,NLDD 114 mask,PLDD 113 mask,PLDD implant,22,0.18um Process Cross section,Poly,PLDD,PLDD,NLDD,P Substrate,NLDD,Pwell,NAPT,VTN,Nwell,PAPT,VTP,Poly,PLDD 197 mask(3.3V&1.8V),P-pocket/PLDD imp,NLDD 116 mask(3.3V),NLDD2-1 As/NLDD2-2P31 imp,23,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,PSD 197 mask,NSD 198 mask,NSD imp,24,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,25,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,26,0.18um Process Cross section,Polyi,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,27,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Polyi,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,IMD-1,W,W,W,W,28,0.18um Process Cross section,Poly,P Substrate,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,IMD-1,W,W,W,W,Metal-1,Metal-2,29,0.18um Process Cross section,Metal-1,IMD-1,A-Si,Pwell,NAPT,Nwell,PAPT,VTP,Poly,PSD,NSD,NSD,NSD,PSD,PSD,W,W,W,W,ILD,Trench oxide,Metal-4,IMD-4,W,W,W,IMD-5,Metal-6,IMD-3,W,W,Metal-2,IMD-2,Metal_5,W,W,W,W,W,W,W,W,30,PCM,PCM就是Process Control&Monitor的简称；,同时,PCM也称为WAT：Wafer Accept Test；,31,PCM-Purpose,PCM 主要把线上一些工艺异常进行及时的反映,在产品入库前对其进行最后一道质量的检验,其作用归纳起来,主要有如下几点：,（1）对产品进行参数质量检验；,（2）监控在线工艺对电参数的影响,以及工艺的波动；,（3）判定WAFER PASS/FAIL的一个重要依据,客户会根据PCM 测试情况,决定接收、或拒收WAFER。,(4)Yield analysis,32,PCM key items,（1）Vt,（2)B