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按一下以編輯母片標題樣式,按一下以編輯母片文字樣式,第二層,第三層,第四層,第五層,*,AU Optronics Corp.,周驊,JI,工程,2,課,ACF,材料介紹,目錄,What is ACF,ACF之應用,ACF材料介紹,ACF與COG製程參數之關係,ACF與COG製程品質之關係,What is ACF,一.異方性導電膠,A,nisotropic,C,onductive,F,ilm,二.佈滿導電粒子之熱硬化樹脂膠帶,三.提供特定方向之導電功能,四.具有良好之接著效果,ACF之應用,PCB,Panel,Chip Glass,PCB,Panel,FPC Glass,FPC PCB,FPC,Glass COF,PCB COF,COF,Chip COF,ACF材料介紹,(for FPC),AC-7,10,6,U,-,25,Type of Separater,ACF厚度,1000mm,10,=,100mm,FPC min Pitch,一.FPC min space:50,m,二.FPC min width:50,m,三.Connection Resistance:, 2,四.Isulation,Resistance:, 10,12,Panel,FPC,width,space,ACF材料介紹,(for FPC:7106),五.厚度:25,m,(取決於FPC導線之高度,請見續頁詳述),六.長度:50M,七.寬度:2.5mm,(取決於FPC壓著區域之寬度),八.粒子大小:10,m,九.粒子密度:800pcs/mm,2,十.接著劑:熱硬化樹脂,十一.Separater:防靜電PET,Au,Ni,Plastic Particle,ACF材料介紹,(for FPC:7106),十二,.ACF,厚度與,FPC,的關係,W: conductor width,S: conductor space,H: conductor height,T,0,: ACF thickness before bonding,T,1,: ACF thickness after bonding,: correction value (0.15H),FPC,T,0,H,S,W,Panel,Panel,FPC,T,1,(W+S)*T,0,=H*S+T,1,*(W+S),if W=S,T,0,=H/2 + T,1,+,ACF材料介紹,(for COG:8304),一.厚度:23,m,(取決於IC Bump之高度,請見續頁詳述),二.長度:50M,三.寬度:2.5mm,(取決於IC之寬度),四.粒子大小:5,m,五.粒子密度:20000pcs/mm,2,六.接著劑:熱硬化樹脂,七.Separater:防靜電PET,八.Double layer,Au,Ni,Plastic Particle,ACF與COG製程參數之關係,8,6,4,2,0,0 250 500 750 1000,Time (hr),Connection resistance (,),170,C,190C,210,C,10sec,Bonding,8,6,4,2,0,0 250 500 750 1000,Time (hr),Connection resistance (,),190,C,210C,230,C,一.製程溫度時間 接觸阻抗,5sec,Bonding,190,C,210,C,85,C,85%RH,ACF與COG製程參數之關係,Connection resistance (,),8,6,4,2,0,0 250 500 750 1000,Time (hr),二.製程壓力 接觸阻抗,25MPa,50MPa,100MPa,200MPa,250MPa,50150 MPa,85,C,85%RH,ACF與COG製程品質之關係,Connection resistance (,),8,6,4,2,0,0 5 10 15,Number of particle (per Bump),一.導電粒子數 接觸阻抗,8,6,4,2,0,0 5 10 15,t = 0 hr,t = 500 hrs,-40,C 100 C,每個gold bump導電粒子數須大於5顆,ACF與COG製程品質之關係,二.導電粒子變形量 接觸阻抗,Connection resistance (,),Deformation (%),8,6,4,2,0,0 20 40 60 80,t,0=,5,m,t,Bump,Bump,Glass,Glass,Deformation=,t,0,-,t,t,0,100%,每個導電粒子壓著變形量須大於20%,ACF與COG製程品質之關係,三.導電粒子變形量 判別標準,ACF與COG製程品質之關係,四.ACF厚度 接觸阻抗,Connection resistance (,),8,6,4,2,0,ACF Thickness (,m),8,6,4,2,0,15 20 25 30,t = 0 hr,t = 500 hrs,-40,C 100 C,15 20 25 30,ACF Thickness, Bump height + 3,m,18,m,Bump height : 15,m,ACF與COG製程品質之關係,五.Bump hardness 接觸阻抗,Connection resistance (,),Time (hr),1525 Hv,4050 Hv,100110 Hv,8,6,4,2,0,0 250 500 750 1000,Bump hardness,50 Hv,85,C,85%RH,100110 Hv,4050 Hv,1525 Hv,導電粒子,未壓破變形,導電粒子,變形量,20%,導電粒子,變形量,50%,ACF與COG製程品質之關係,六.Bump pad導電粒子數 導電粒子密度,Number of conducting particles on a bump,30,20,10,0,0 5 10 15 20,Double layer Single layer,Bump size:70um*70um,particle size:5um,Particle density (,1000 pcs/mm2),Double layer,導電粒子抓取率:50%,Single layer,導電粒子抓取率:30%,ACF與COG製程品質之關係,七.,Layer structure insulation,100,80,60,40,20,0,0 5 10 15 20 25 30,Double layer,Single layer,Double layer,較不易短路,Probability of,short circuit (%),Conductor spacing (um),Conductor spacing,ACF與COG製程品質之關係,八.,Layer structure insulation resistance,10,12,10,11,10,10,10,9,10,8,104,0 5 10 15 20 25 30,Double layer,Single layer,Double layer,絕緣性較佳,Conductor spacing (um),Conductor spacing,Insulation resistance (, ),課程結束,ACF,材料,敬請指教,品質,參數,應用,
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