资源描述
单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,*,单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,*,单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,*,CVD Process Introduction,Outline,1. CVD Process Introduction,2. CVD Type Classification,3. Dielectric Film Characteristic,4. CVD film Application-DARC and LowK,5. Q & A,2,Outline,1. CVD Process Introduction,2. CVD Type Classification,3. Dielectric Film Characteristic,4.,CVD film Application-DARC and LowK,5. Q & A,3,1. CVD Process Introduction,4,CVD(Chemical Vapor Deposition) :,The process of depositing,solid films,using,gases or vapors,via,chemical reaction,on the,substrate surface.,Advantages of CVD,:,Good step coverage can be achieved,Wide range of materials available,Good composition control,Good process control,1. CVD Process Introduction,5,The sequence of reaction steps in a CVD reaction,Diffusion of reaction to surface,Diffusion of,products from surface,Film-forming reaction,Subsequent surface reaction,Desorption,Absorption,1. Transport of,reacting gaseous,species to the substrate surface,2. The reactants are,adsorbed,on the substrate.,3. The adatoms undergo,migration,and film-forming chemical reactions.,4.,Desorption,of gaseous reaction by-products,5.Transport of reaction,by-products,away from the substrate surface,CVD Process Sequence,Precursors arrive on the surface,Migrate on the surface,React on the surface,Nucleation :,Island formation,Islands grow,Islands grow,(cross section),Islands merge,Continuous thin film,1. CVD Process Introduction,(I):MASS TRANSPORT LIMITED,at,higher temperature,Deposition rate is,sensitive to,flux concentration,insensitive to temperature,(II):SURFACE REACTION RATE LIMITED,at,lower temperature,Deposition rate is,sensitive to,temperature,insensitive to flux concentration,(I),(II),1. CVD Process Introduction,Dep rate vs Temp,Schematic diagrams of transport of reacting gaseous species from source to the substrate surface for,(a) surface reaction rate limited reaction, and,(b) mass transport limited reaction,.,1. CVD Process Introduction,Surface reaction & Mass transport limited,Components of DCVD Systems,1. Gas sources,2. Gas feed lines,3. Mass flow controller,4. Reaction chamber,5. Heating and temperature control system,6. Pumping and pressure control system,7. RF system,8. Exhaust,1. CVD Process Introduction,1. CVD Process Introduction,10,N-Well,P-Well,P,+,P,+,N,+,N,+,APL,(Aluminum Pad Layer),RV (Re-distribution Via),M1,M2,M3,M4,T4M2,Via1,Via2,Via3,T4V2,IMD 2,IMD 3,IMD 4,IMD 5,IMD 1,PMD,CB (Chip Barrier),STI,IMD(Inter Metal Dielectric),SiN/SiCN/SiC,SiO2/FSG/SiOCH,Passivation:,SiO2,SIN,SiON,BEOL,FEOL,STI (Shallow Trench Isolation),Poly HM (Hard Mask),Spacer,SAB (Salicide Block),SMT (Stress Memory Technology),CESL (Contact Etch Stop Layer),PMD (Pre-Metal Dielectric),1. CVD Process Introduction,11,DCVD Process Precursors:,Silicon source: TEOS,SiH4,TMS,Oxygen source: O3 ,TEOS,N2O,O2,Phosphorus source:,TEPO,PH3,Boron source:,TEB,B2H6,Fluorine: SiF4, NF3,Nitric source: N2,NH3,Carbon source: C2H2, C3H6,TMS: (CH3)4Si,四甲基硅烷, Tetramethylsilane,TEOS: Si(OC2H5)4,四乙氧基硅烷,Tetraethoxysilane,TEPO: PO(OC2H5)3,三乙氧基磷烷, Triethyl Phosphate,TEB:,B(OC2H5)3,三乙氧基硼烷,Triethyl Borate,SiO2 (USG), SiN, SiON, PSG, BPSG, SiCN, SiOC, FSG ,Outline,1. CVD Process Introduction,2. CVD Type Classification,3. Dielectric Film Characteristic,4.,CVD film Application-DARC and LowK,5. Q & A,12,2. CVD Types Classification,13,Temperature based,HTO & LTO (High & Low Temperature Oxide),RTCVD (Rapid Thermal CVD),Pressure based,LPCVD (Low Pressure),APCVD (Atmospheric Pressure),SACVD (Sub Atmospheric Pressure),Reagent based,Silane,TEOS,MOCVD (Metal Organic),Energy based,Thermal CVD,PECVD (Plasma Enhanced),HDP (High Density Plasma),2. CVD Types Classification,14,PROCESS,Pro,Con,LPCVD,Excellent Purity, Uniform Conformal, Large Wafer Capacity,High Temperature, Low Dep rate,PECVD,Low Temperature, High Dep Rate,Hydrogen Content, Poor Step Coverage,SACVD,Low Temperature, Conformal,Low Dep rate, moisture uptake, surface sensitivity,HDPCVD,Excellent Gap Fill, High Quality Oxide,Complex Reactor,Pro & Con for Some Typical CVD Process,Three popular methods are widely adopted to produce SiO,2,.,1. LPCVD TEOS oxide (Typical spacer oxide),Si(OC,2,H,5,),4,- SiO,2,+ by-products D.R.: 55 A/min.,700C,2. PECVD TEOS oxide (Typical IMD oxide),Si(OC,2,H,5,),4,+ O2 - SiO2 + by-products D.R.: 7000 A/min.,Plasma (400C),3. SACVD O,3,/TEOS oxide (Typical IMD oxide),Si(OC,2,H,5,),4,+ O,3,- SiO,2,+ by-products D.R.: 1800 A/min.,400C,2. CVD Types Classification,Heating vs Plasma,1. LPCVD Si,3,N,4,deposition,NH,3,+ SiH,2,Cl,2,- Si,3,N,4,+ By products D.R.: 18 A/min.,740C 780C,2. PECVD Si,3,N,4,deposition .(2),SiH,4,+ NH,3,+ N,2,- SixNyHz + By products D.R.: 9000 A/min.,400C,2. CVD Types Classification,PECVD NIT,2. CVD Types Classification,17,Plasma,S,Heater Plate,RF Power,Process Gases,Byproduct to,The pump,Wafer,Process Chamber,Shower head,SACVD:,No RF system, No Plasma,Simple Sketch Map For PECVD & SACVD Process,2. CVD Types Classification,18,Basic Principle of HDP CVD,2. CVD Types Classification,19,Over Sputtering,Sputtering of Metal and ARC Layer at the corner,Too Little Sputtering,Cusping of,Deposition Oxide - Poor gap-Filling Results,in Void,Equilibrium Between Deposition and Sputtering,at the Corner,Deposition Rate (Dc) = Sputtering Rate (Sc),MAXIMIZED GAPFILL CAPABILITY,2. CVD Types Classification,20,PECVD,HDP CVD,Gapfill Capability Compare,Outline,1. CVD Process Introduction,2. CVD Type Classification,3. Dielectric Film Characteristic,4.,CVD film Application-DARC and LowK,5. Q & A,21,3. Dielectric Film Characteristic,22,1. Particle,2. Thickness & Uniformity,3. Refractive Index,- Impurity, composition,- Density,4. Reflectivity,5. Stress,6. FTIR,- Composition bonding ratio:,Si-F, Si-H, Si-N, Si-CH3,- Impurity (-H, -OH, H2O),7, XRF,-Dopant concentration: B, P,8. Etching Rate,- Composition (Dopant level),- Density,9.SEM & TEM,- Step coverage/ Gap fill,- Degree of planarization,10.Electrical Properties,- Dielectric constant,- Dielectric breakdown,3. Dielectric Film Characteristic,23,Non-Uniformity,Range-Uniformity,Uniformity,3. Dielectric Film Characteristic,24,Dep Rate, Shrinkage,After a thermal cycle, film thickness shrinks. The smaller the shrinkage, the better the film quality.,Deposition rate is a very important specification of a CVD process, as it is directly related to throughput.,3. Dielectric Film Characteristic,25,RI can deliver the information for films chemical composition and physical condition.,RI (Refractive Index),3. Dielectric Film Characteristic,26,Stress,3. Dielectric Film Characteristic,27,R is the calculated radius of curvature,t,s,is the substrate thickness,t,f,is the film thickness,E is the substrate Yongs modulus,v is the substrate Poisson ratio,G. Gerald Stoney. Proc. R. Soc. Lond. A80. 172-175 (1909),Stress,3. Dielectric Film Characteristic,28,Step coverage,TEOS,Silane,Outline,1. CVD Process Introduction,2. CVD Type Classification,3. Dielectric Film Characteristic,4.,CVD film Application-DARC and LowK,5. Q & A,29,4. CVD film Application-DARC,30,DARC (Dielectric Anti Reflective Coating),31,4. CVD film Application-DARC,32,4. CVD film Application-DARC,Why Need Low K?,RC Delay,4. CVD film Application-Low K,33,How to do Low K?,Porosity,Air,is considered the perfect insulator. It has a dielectric constant of 1.,One method of creating low-k dielectric materials is to introduce,nanometer scale pores,into a solid film to lower its effective dielectric constant.,4. CVD film Application-Low K,34,35,Type,EQP ID,Tool Model,Application,Vendor,HARP,ATHRPA01,Producer GT,STI/PMD,AMAT,HDP,ATHDPN02,SPEED Max,STI/PMD,NVLS,HDP,ATHDPN01,SPEED Max,STI/PMD,NVLS,SACVD,ATOTSA01,Producer GT,Spacer2 OX/SAB OX,AMAT,PECVD,ATPSNN03,Vector Express,Cu SIN,NVLS,PECVD,ATFSGN01,Vector Express,Cu SION,NVLS,PECVD,ATFSGN02,Vector Express,Cu FSG,NVLS,PECVD,ATPSNN02,Vector Express,Cu SIN,NVLS,PECVD,ATPSNN01,Vector Express,FEOL SIN,NVLS,PECVD,ATNDCN01,Vector Express,Cu NDC,NVLS,PECVD,ATNDCN02,Vector Express,Cu NDC,NVLS,PECVD,ATTEON03,Vector Express,Cu TEOS,NVLS,PECVD,ATTEON02,Vector Express,Al TEOS,NVLS,PECVD,ATHSNA01,Producer GT,Spacer2 SIN/SAB SIN/CESL,AMAT,PECVD,ATPOXA01,Producer GT,Cu MHM cap/ Pas OX,AMAT,PECVD,ATTEOA01,Producer GT,SMT SIN,AMAT,PECVD,ATLKOA01,Producer GT,Cu BD,AMAT,Current CVD tools list table in HuaLi,36,Thank you,谢谢,Q&A,
展开阅读全文