低功耗霍尔元件DH471

1. FeaturesMicropowerconsumptionforbatterypoweredapplicationsOmnipolar,outputswitcheswithabsolutevalueofNorthorSouthpolefrommagnetOperationdownto2.5V Highsensitivityfordirectreedswitchreplacementapplications CMOSoutput2. Chopperstabilizedamplifierstage2DescriptionTheDH471OmnipolarHalleffectsensorICisfabricatedtechnology.Itincorporatesadvancedchopper-stabilizationtechniquestoprovideaccurateandstablemagneticswitchpoints.ThecircuitdesignprovidesaninternallycontrolledclockingmechanismtocyclepowertotheHallelementandanalogsignalprocessingcircuits.Thisservestoplacethehighcurrent-consumingportionsofthecircuitintoa“Sleep”mode.Periodicallythedeviceis“Awakened”bythisinternallogicandthemagneticfluxfromtheHallelementisevaluatedagainstthepredefinedthresholds.IfthefluxdensityisaboveorbelowtheBop/Brpthresholdsthentheoutputtransistorisdriventochangestatesaccordingly.Whileinthe“Sleep”cycletheoutputtransistorislatchedinitspreviousstate.Thedesignhasbeenoptimizedforserviceinapplicationsrequiringextendedoperatinglifetimeinbatterypoweredsystems.TheoutputtransistoroftheDH471willbelatchedon(Bop)inthepresenceofasufficientlystrongSouthorNorthmagneticfieldfacingthemarkedsideofthepackage.Theoutputwillbelatchedoff(Brp)intheabsenceofamagneticfield.3Applications Solidstateswitch HandheldWirelessHandsetAwakeSwitch LidclosesensorforbatterypowereddevicesV2.00Apr.25,20111/9深圳凯祥科技有限公司DH47系列V2.00Apr.25,201133/9深圳凯祥科技有限公司DH47系列1*1.ParasiticdiodeVDDQsleep/awakelogicchopperMagnetproximitysensorforreedswitchreplacementinlowdutycycleapplications4TypicalApplicationCircuitInnosenspole-independentsensingtechniqueallowsforoperationwitheitheranorthpoleorsouthpolemagnetorientation,enhancingthemanufacturabilityofthedevice.Thestate-of-the-arttechnologyprovidesthesameoutputpolarityforeitherpoleface.Itisstronglyrecommendedthatanexternalbypasscapacitorbeconnected(incloseproximitytotheHallsensor)betweenthesupplyandgroundofthedevicetoreducebothexternalnoiseandnoisegeneratedbythechopper-stabilizationtechnique.Thisisespeciallytrueduetotherelativelyhighimpedanceofbatterysupplies.5FunctionalBlockDiagram6PinningMarkViewPinDescription7InternalTimingCircuitNAMENOSTATUSDESCRIPTIONVdd1PPowerSupplyOut2OoutputGnd3PICGroundCurrent0IawTime8AbsoluteMaximumRatingsParameterSymbolValueUnitsSupplyVoltage(operating)VDD6VSupplyCurrentIDD5mAOutputVoltageVOUT6VOutputCurentIOUT5mAOperatingTemperatureRangeTA-40to85CStorageTemperatureRangTS-50to150CESDSensitivity-4000VExceedingtheabsolutemaximumratingsmaycausepermanentdamage.Exposuretoabsolute-maximumratedconditionsforextendedperiodsmayaffectdevicereliability.9DCElectricalCharacteristicsDCOperatingParameters:TA=25C,VDD=.75VV2.00Apr.25,201133/9深圳凯祥科技有限公司DH47系列ParameterSymbolTestConditionsMin|TypMaxUnitsOperatingvoltageVDDOperating2.535.5VSupplycurrentIDDAverage5yAOutputCurrentIOUT1.0mASaturationVoltageVSATIOUT=1mA0.4VAwakemodetimeTAWOperating175ySSleepmodetimeTSLOperating70mS10MagneticCharacteristicsOperatingParameters:TA=25C,VDD=.75VDC.PARAMETERSymbolMinTypeMaxUnitsOperatingPointBop-+/-35+/-60GsReleasePointBrp+/-5+/-27-GsHysteresisBhys-8-Gs11ESDProtectionHumanBodyModel(HBM)testsaccordingto:Mil.Std.883Fmethod3015.7ParameterSymbolLimitValuesUnitNotesMinMaxESDVoltageVsd4kV12PerformanceCharacteristicsBop-TypicalMagneticSwitchpointsversusVdd43210pEjuou巴活PZH2.22.42.62.&33.2TypicalMagneticSwitchpointsversusTemperature.4TypicalCurrentConsumptionu左Iduln-suflQluiMJrl0VddV13UniqueFeaturesCMOSHallICTechnologyThechopperstabilizedamplifierusesswitchedcapacitortechniquestoeliminatetheamplifierV2.00Apr.25,201155/9深圳凯祥科技有限公司DH47系列offsetvoltage,which,inbipolardevices,isamajorsourceoftemperaturesensitivedrift.CMOSmakesthisadvancedtechniquepossible.TheCMOSchipisalsomuchsmallerthanabipolarchip,allowingverysophisticatedcircuitrytobeplacedinlessspace.Thesmallchipsizealsocontributestolowerphysicalstressandlesspowerconsumption.InstallationCommentsConsidertemperaturecoefficientsofHallICandmagnetics,aswellasairgapandlifetimevariations.Observetemperaturelimitsduringwavesoldering.TypicalIRsolder-reflowprofile: NoRapidHeatingandCooling. RecommendedPreheatingformax.2minutesat150CElectronicsemiconductorproductsaresensitivetoElectroStaticDischarge(ESD).AlwaysobserveElectroStaticDischargecontrolprocedureswheneverhandlingsemiconductorproducts.15PackageInformation15.1TSOT-23PackagePhysicalCharacteristicsV2.00Apr.25,201177/9深圳凯祥科技有限公司DH47系列V2.00Apr.25,201177/9深圳凯祥科技有限公司DH47系列TopView471mm1.702.95Notes:1) .PINOUT:Pin1VDDPin2OutputPin3GND2) .Alldimensionsareinmillimeters;SideView0.503.001.802.000.000.103.000.700.80Marking:47-CodeofDevice(DH471);y-last1digitofyear;mm-ProductionLot;EndView0.300.603.00V2.00Apr.25,201177/9深圳凯祥科技有限公司DH47系列V2.00Apr.25,201177/9深圳凯祥科技有限公司DH47系列TSOT-23PackageHallLocationV2.00Apr.25,201177/9深圳凯祥科技有限公司DH47系列V2.00Apr.25,201177/9深圳凯祥科技有限公司DH47系列V2.00Apr.25,201177/9深圳凯祥科技有限公司DH47系列V2.00Apr.25,201188/9深圳凯祥科技有限公司DH47系列15.2TO-92PackagePhysicalCharacteristics1O+-C22.00.13.901.40.13.904.00.10.050.053-0.383.90Hallplate471mm3-0.443.901.2731O03045厶一_Notes:1).Controllingdimension:mm;2).Lesdsmustbefreeofflashandplatingvoids;3).Donotbendleadswithin1mmofleadtopackageinterface;4).PINOUT:Pin1VDDPin2GNDPin3OutputMarking:47-CodeofDevice(ES247);y-last1digitofyear;mm-ProductionLot;15.3DFN2020-3(QFN2020-3)PackagePhysicalCharacteristicsDFN2020-3PackageDimensionDFN2020-3HallPlate/ChipLocationV2.00Apr.25,201188/9深圳凯祥科技有限公司DH47系列V2.00Apr.25,201199/9深圳凯祥科技有限公司DH47系列(TopView)(Bottomview)RillIVDBPm1OutputPin3QI)2.Gmrollingdiniviisifiii:mm；3”Chipnbiingwilllx?lOnuEnuvunuiiiii-l.ChipinuslIkinPKQ16.OrderingInformationPartNo.TemperatureSuffixPackageCodeDH471E(-4Cto85C)UA(TO-92S)ST(TSOT-23)DF(DFN2020-3)V2.00Apr.25,201199/9