《微波射频器件介绍》PPT课件.ppt

第一单元射频器件简介,理工大学通信工程学院,卫星通信系微波通信教研室,射频微电子学,第次课,2012.09.01,一、放大器二、衰减器三、倍频器四、混频器五、VCO和分频器六、开关FREQUENCYDIVIDERS(PRESCALERS)&PHASE/FREQUENCYDETECTORSFREQUENCYMULTIPLIERS-ACTIVEMODULATORS-BI-PHASEMODULATORS-DIRECTQUADRATUREMODULATORS-VECTORPHASESHIFTERS-AnalogPOWERDETECTORSVOLTAGECONTROLLEDOSCILLATORS*PHASELOCKEDOSCILLATORI/QMIXERSPHASESHIFTERS,HMC619LP5/619LP5EGaAsPHEMTMMICPOWERAMPLIFIER,DC-10GHzP1dBOutputPower:+27dBmGain:11dBOutputIP3:+37dBmSupplyVoltage:+12V300mA50OhmMatchedInput/Output32Lead5x5mmLeadSMTPackage:25mm2,HMC619LP5/619LP5E放大器,HMC619LP5/619LP5E放大器,GSM_PHS双模手机射频前端的关键技术研究与性能的优化,PAmodule,收发芯片,HMC619LP5/619LP5E放大器,HMC462LP5/462LP5E放大器,NoiseFigure:2.5dB10GHzGain:13dBP1dBOutputPower:+14.5dBm10GHzSelf-Biased:+5.0V66mA50OhmMatchedInput/Output25mm2LeadlessSMTPackage,TheHMC462LP5&HMC462LP5EareGaAsMMICPHEMTLowNoiseDistributedAmplifiersinleadless5x5mmsurfacemountpackageswhichoperatebetween2and20GHz.Theself-biasedamplifierprovides13dBofgain,2.5to3.5dBnoisefigureand+14.5dBmofoutputpowerat1dBgaincompressionwhilerequiringonly66mAfromasingle+5Vsupply.Gainflatnessisexcellentfrom6-18GHzmakingtheHMC462LP5&HMC462LP5EidealforEW,ECMRADARandtestequipmentapplications.ThewidebandamplifierI/Osareinternallymatchedto50OhmsandareinternallyDCblocked.,HMC462LP5/462LP5E放大器,HMC462LP5/462LP5E放大器,HMC273MS10G是宽带5位正电压控制的GaAsIC数字衰减器，覆盖0.73.7GHz，插入损耗为2dB,衰减器的离散值为1，2，4，8，16dB，总衰减量为31dB。精确值为0.5dB，5位控制电压为触发电压为0和35伏，来选择每一个衰减状态，通过5K欧姆外接电阻提供单电压35伏。,HMC273MS10G/273MS10GE数字衰减器,HMC273MS10G/273MS10GE数字衰减器,HMC273MS10G/273MS10GE数字衰减器,HMC307QS16G/307QS16GE数字衰减器,1dBLSBStepsto31dBSingleControlLinePerBit+/-0.5dBTypicalBitErrorMiniatureQSOP-16Package:29.4mm2,TheHMC307QS16G&HMC307QS16GEarebroadband5-bitGaAsICdigitalattenuatorsin16leadQSOPgroundedbasesurfacemountplasticpackages.CoveringDCto4GHz,theinsertionlossislessthen2dBtypical.Theattenuatorbitvaluesare1(LSB),2,4,8,and16dBforatotalattenuationof31dB.Attenuationaccuracyisexcellentat0.5dBtypicalwithanIIP3ofupto+44dBm.Fivebitcontrolvoltageinputs,toggledbetween0and-5V,areusedtoselecteachattenuationstateatlessthan50uAeach.AsingleVeebiasof-5VallowsoperationdowntoDC.ThisproductisanexcellentalternativetotheHMC235QS16G.,HMC307QS16G/307QS16GE数字衰减器,PAmodule,收发芯片,HMC307QS16G/307QS16GE,四倍频芯片HMC443LP4/443LP4E,采用的是HITTITE公司生产的集成四倍频芯片HMC443LP4/443LP4E利用基于该芯片所构成的倍频模块，可将频率合成器产生的点频2.4GHz信号倍频到9.6GHz，以作为转发器系统中上变频器的本振信号源。,集成芯片HMC443是采用InGaPGaAsHBT技术的宽带倍频器，当输入电压为+5V时，倍频器能提供4dBm左右的输出功率，并且对温度、输入电压、输入功率的变化等具有比较高的稳定性。与输出信号电平相比，倍频器对信号中出现的基波和不需要的奇次谐波的抑制效果很好，大于25dBc。同时HMC443芯片具有良好的系统相位噪声性能，单边带相位噪声低，约为-142dBc/Hz在100kHz处。与传统的本振链路的设计制作相比，四倍频器芯片HMC443的使用能有效的减少毫米波本振倍频链路中器件的数量，极大的简化了工程设计与制作。,图4-4倍频器HMC443外围电路图,四倍频芯片HMC443LP4/443LP4E,四倍频芯片HMC443LP4/443LP4E,图4-5倍频器的PCB版图图4-6倍频器模块实物图,二倍频器HMC448LC3B,HMC448是GaAsPHEMT技术宽带倍频器，当输入0dBm时，在2022GHz范围内，倍频器提供11dBm的输出电平，比较低的相位噪声-135dBc/Hz在100KHz处，帮助系统提供了良好的相位噪声性能，该器件消除了跳金线可以使用表贴技术安装，,GaAsMMICMIXERw/INTEGRATEDLOAMPLIFIER,1.2-2.5GHz采用混频器HMC422MS8是GaAsMMIC双平衡混频器，这种混频器可以用于上下变频器具有集成本振放大器，混频器需要的电平为0dBm，供电电压3V，电流30mA，混频器转换损失为810.5dB，,HMC422MS8混频器,HMC422MS8混频器,HMC422MS8混频器,压控振荡器HMC513LP5,压控振荡器采用HITTITE公司的HMC513LP5芯片，集成了谐振器、负阻器件、变容二极管、除二和四分频器，其输出功率为7dBm，输出频率10.4311.46GHz相位噪声为-110dBc/Hz100KHz，输出为5.215.73GHz，输出为2.62.86GHz，调谐电压为213V，电流270mA,由于VCO的输出功率较低，故为保证有足够的功率，在VCO输出加一级放大器。输出频率和调谐电压的关系如图3，调谐灵敏度和调谐电压的关系如图4，不需要外部匹配器匹配,压控振荡器是无引脚QFN5X5mm表贴器件。HMC513LP5,图3输出频率和调谐电压的关系,图4调谐灵敏度和调谐电压的关系,压控振荡器HMC513LP5,HMC362S8G/362S8GE4分频器,UltraLowSSBPhaseNoise:-149dBc/HzWideBandwidthOutputPower:-6dBmSingleDCSupply:+5VS8GSMTPackage,TheHMC362S8G&HMC362S8GEarelownoiseDivide-by-4StaticDividerswithInGaPGaAsHBTtechnologyin8leadsurfacemountplasticpackages.ThisdeviceoperatesfromDC(withasquarewaveinput)to12GHzinputfrequencywithasingle+5.0VDCsupply.ThelowadditiveSSBphasenoiseof-149dBc/Hzat100kHzoffsethelpstheusermaintaingoodsystemnoiseperformance.,HMC362S8G/362S8GE4分频器,HMC362S8G/362S8GE4分频器,HMC362S8G/362S8GE4分频器,HMC493LP3/493LP3EVCO,UltraLowSSBPhaseNoise:-150dBc/HzVeryWideBandwidthOutputPower:-4dBmSingleDCSupply:+5V3x3mmQFNSMTPackage,HMC493LP3/493LP3EVCO,HighRFPowerHandling:+40dBmHighThirdOrderIntercept:+70dBmSinglePositiveSupply:+3to+10VdcLowInsertionLoss:0.4to0.6dBUltraSmallMSOP8GPackage:14.8mm2IncludedintheHMC-DK005DesignersKit,TheHMC484MS8G+70dBmthirdorderinterceptat+5voltbias.RF1andRF2arereflectiveshortswhen“OFF”.On-chipcircuitryallowssinglepositivesupplyoperationfrom+3Vdcto+10VdcatverylowDCcurrentwithcontrolinputscompatiblewithCMOSandmostTTLlogicfamilies.,HMC484MS8G/484MS8GEGaAsMMIC10WATTT/RSWITCHDC-3.0GHz,单刀双掷开关,收发芯片,HMC484MS8G/484MS8GEGaAsMMIC10WATTT/RSWITCHDC-3.0GHz,HMC484MS8G/484MS8GEGaAsMMIC10WATTT/RSWITCHDC-3.0GHz,HMC484MS8G/484MS8GEGaAsMMIC10WATTT/RSWITCHDC-3.0GHz,HMC345LP3/345LP3E单刀丝掷开关,BroadbandPerformance:DC-8.0GHzHighIsolation:35dB6GHzLowInsertionLoss:2.2dB6GHzIntegratedPositiveSupply2:4TTLDecoder3x3mmSMTPackage,TheHMC345LP3&HMC345LP3Earebroadbandnon-reflectiveGaAsMESFETSP4Tswitchesinlowcostleadlesssurfacemountpackages.CoveringDCto8GHz,thisswitchoffershighisolationandlowinsertionloss.Thisswitchalsoincludesanonboardbinarydecodercircuitwhichreducestherequiredlogiccontrollinestotwo.Theswitchoperatesusingapositivecontrolvoltageof0/+5V,andrequiresafixedbiasof+5V.,GaAsMMICSP4TNON-REFLECTIVEPOSITIVECONTROLSWITCH,DC*-8.0GHz,HMC345LP3/345LP3E单刀丝掷开关,HMC345LP3/345LP3E单刀丝掷开关,HMC597LP4/597LP4E,SiGeWIDEBANDDIRECTDEMODULATORRFIC,100-4000MHz,HighLinearity:+25dBmIIP3&+60dBmIIP2LowNoiseFigure:15dBHighIntegration:On-ChipRFBalun,HMC597LP4/597LP4E,HMC597LP4/597LP4E,HMC597LP4/597LP4E,HMC538LP4/538LP4E移相器,AvailableasLeadFreeWideBandwidth:6-15GHz600PhaseShiftSinglePositiveVoltageControlQFNLeadlessSMTPackage,16mm2,HMC538LP4/538LP4E移相器,收发芯片,HMC538LP4/538LP4E移相器,HMC600LP4/600LP4E,WideDynamicRange:upto75dBFlexibleSupplyVoltage:+2.7Vto+5.5VPower-DownModeExcellentStabilityoverTemperatureCompact4x4mmLeadlessSMTPackage,75dBLOGARITHMICDETECTOR/CONTROLLER50-4000MHz,HMC600LP4/600LP4E,HMC600LP4/600LP4E,AD8367500MHz,Linear-in-dBVGAwithAGCDetectorAGC放大器,BroadRangeAnalogVariableGain2.5dBto+42.5dB3dBCutoffFrequencyof500MHzGainUpandGainDownModesLinear-in-dB,Scaled20mV/dBResistiveGroundReferencedInputNominalZIN200On-ChipSquare-LawDetectorSingle-SupplyOperation:2.7Vto5.5VAPPLICATIONSCellularBaseStationBroadbandAccessPowerAmplifierControlLoopsComplete,LinearIFAGCAmplifiersHigh-SpeedDataI/O,AD8367500MHz,Linear-in-dBVGAwithAGCDetectorAGC放大器,AD8367500MHz,Linear-in-dBVGAwithAGCDetectorAGC放大器,BasicConnectionsforVoltage-ControlledGainMode,Figure8.BasicConnectionsforAGCOperation,AD8367500MHz,Linear-in-dBVGAwithAGCDetectorAGC放大器,ExampleofUsinganExternalDetectortoFormanAGCLoop,AD8367500MHz,Linear-in-dBVGAwithAGCDetectorAGC放大器,AD83460.8GHzto2.5GHzQuadratureModulator,1degreermsquadratureerror1.9GHz0.2dBI/Qamplitudebalance1.9GHzBroadfrequencyrange:0.8GHzto2.5GHzSidebandsuppression:46dBc0.8GHzSidebandsuppression:36dBc1.9GHzModulationbandwidth:dcto70MHz0dBmoutputcompressionlevel0.8GHzNoisefloor:147dBm/HzSingle2.7Vto5.5VsupplyQuiescentoperatingcurrent:45mA,TheAD8346isasiliconRFICI/Qmodulatorforusefrom0.8GHzto2.5GHz.ItsexcellentphaseaccuracyandamplitudebalanceallowhighperformancedirectmodulationtoRF.ThedifferentialLOinputisappliedtoapolyphasenetworkphasesplitterthatprovidesaccuratephasequadraturefrom0.8GHzto2.5GHz.Bufferamplifiersareinsertedbetweentwosectionsofthephasesplittertoimprovethesignal-to-noiseratio.TheIandQoutputsofthephasesplitterdrivetheLOinputsoftwoGilbert-cellmixers.TwodifferentialV-to-Iconvertersconnectedtothebasebandinputsprovidethebasebandmodulationsignalsforthemixers.Theoutputsofthetwomixersaresummedtogetheratanamplifierwhichisdesignedtodrivea50load.Thisquadraturemodulatorcanbeusedasthetransmitmod-ulatorindigitalsystemssuchasPCS,DCS,GSM,CDMA,andISMtransceivers.ThebasebandquadratureinputsaredirectlymodulatedbytheLOsignaltoproducevariousQPSKandQAMformatsattheRFoutput.Additionally,thisquadraturemodulatorcanbeusedwithdirectdigitalsynthesizersinhybridphase-lockedloopstogeneratesignalsoverawidefrequencyrangewithmillihertzresolution.TheAD8346comesina16-leadTSSOPpackage,measuring6.5mm5.1mm1.1mm.,AD83460.8GHzto2.5GHzQuadratureModulator,AD83460.8GHzto2.5GHzQuadratureModulator,SingleSideband(SSB)OutputPower(POUT)vs.LOFrequency(FLO).IandQinputsdriveninquadratureatbasebandfrequency(FBB)=100kHzwithdifferentialamplitudeof2.00Vp-p.,AD83460.8GHzto2.5GHzQuadratureModulator,PLLFrequencySynthesizerADF4106,芯片选择集成锁相环芯片ADF4106是美国ADI公司最新生产的锁相环芯片，它具有较高的工作频率，最高达到6.0GHz，它主要应用于无线发射机和接收机中，为上下变频提供本振信号。该芯片主要由低噪声数字鉴相器、精确电荷泵、可编程参考分频器、以及可编程A、B计数器及双模前置分频器（P/P1）等部件组成。数字鉴相器用来对R计数器和N计数器的输出相位进行比较，然后输出一个与二者相位误差成比例的误差电压。精确电荷泵采用可编程电流设置完成输出。可编程参考分频器实际上是一个14bit的R计数器，主要完成对外部参考频率进行分频，分频比的范围是1至16383，从而得到参考频率。可编程A、B计数器及双模前置分频器（P/P1）共同完成主分频比N（N=BPA）,双模前置分频器（P/P1）也是可编程的，P的取值有几种模式：8/9，16/17，32/33，64/65。,图1044采用AD4106的频率合成器电路,ADF4106内部结构图,PLLFrequencySynthesizerADF4106,与其他同类锁相环芯片相比较，ADF4106主要有以下几点优势：（1）鉴相器采用电荷泵式相位频率鉴相器（双D鉴相），这是目前比较推荐使用的鉴相器，可以降低鉴相器输出的相位噪声，并使得鉴相器对于频差和相差都敏感；（2）直接锁定频率上限高达6GHz。其他大部分锁相环芯片，其锁定频率上限大多是3GHz左右。ADF4106提高了近一倍；（3）采用低相噪设计，其归一化相位噪声底为-219dbc/Hz。而且有详细的合成器输出噪声估算公式以及测试的性能指标，便于系统设计；,PLLFrequencySynthesizerADF4106,PLLFrequencySynthesizerADF4106,CABLEMODEM,CATV,DBS&VOIPSOLUTIONS,5-2150MHZ,GSM_PHS双模手机射频前端的关键技术研究与性能的优化,PAmodule,收发芯片,WIRELESSLAN,UWB,UNII&ISMSOLUTIONS,2.4,4.9,5.4,5.8&3-11GHZ,BTSRECEIVERSOLUTIONSFEATURINGHIGHIP3MIXER,BTSRECEIVERSOLUTIONSFEATURINGDUALRFICDOWNCONVERTER,CDMA/GSMREPEATERSOLUTIONS,汇报完毕请各位专家指正谢谢！,