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GDSN-CHANNELPOWER MOSFETDESCRIPTIONThis power MOSFET is produced with advanced VDMOS technology of Semiwill. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance , low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballastbased on half bridge.FEATURES? High ruggedness? RDs(ON)(Max. 0.85 Q)Vgs=10V? Gate Charge (Typ.35nC)? Improved dv/dt Capability? 100% Avalanche TestedABSOLUTE MAXIMUM RATINGSSymbolParameterValueUnitDrain co Source Voltage500VbContinuous Drain Current T 匚 -25 屹)8.5AContinuous Dm in Current (T(.1005.5ADrain current pulsed(note 1)34A%Gate io Sourne Voltage 30VSingle pulsed Avalanche Energy(note 2)790mJEmRepetitive Avalanche Energy(note 113.7tnJdv/dtPnak diode Recovery dv/dt(note3)5.0V/nsTotal power dissipation (TC =2S C)125wDerating Fatter above1.1WCOpcratin呂 JurKtion Temperature &. Storage Temperature55 JCTtMaxi mu rr Lead Temperature for soldering purpose, 1/S frorn C3?c for 5 seconcls.300CTHERMAL CHARACTERISTICSSymbolValueUnitThermal resistancejurctionrc case1.0R|hjbThermal resistanct*. Junction to ambient62.5ELECTFUCALCHARACTERISTIC ( Tc = 25C unless otherwise specified SymbolParamietetTest Condit lionsMln,Typ,UnitOff characteristicsevD5SDrain to source breakdown voltageVgs=0V,I d=250uA500-V&宜Drain Ta source leakage currentVds=500V,V gs=0V-1uAVds=400V,Tc=125 C-10u4Gate to Jiourte leaka current, forwardVds=30V,Vgs=0V-100nAGate to source leakage currerit, reverseVds=-30V,V gs=0V-100nAOn characteristicsVCj5our onres stanceVgs=10V,I d=4.0A0.70.85nDynarnk characteristicsSInput cnpacitanccVgs=0V,V DS=25V,f=1MHz11801450pF wOutput capacitance1302105Reverse transfer capacitance3035Td(griTurn on delay tmeVds=250V,I d=8.5A,R G=25ohm (note 4,5)2060rutrRising time2380Turn off delay time125320右Fall time30100Total eate chargeVds=500V,Vgs=10V,I d=8.5A(note 4,5)3546nC兀Gate -source charge6.0-%Gate drain chairn14SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICSSymbolParameterTest conditionsMin.T沖.UnitkContiriuoLis source currentIntegral reverse p-n Junction-8.5A1如Pulsed source currentdiode in the MOSFET34AV5DDiode forward vdltafie drop.Is=8.5A, V gs=0V-1.4VJReverse recovery timeIs=8.5A, V gs=0V300nsQrrRrpakdown voltage temperaturedlF/d t=100A/us-3.34-nCNotes1. Repeatitive rating : pulse width limited by junction temperature.2. L = 18.5mH, I as= 8.5A, V dd= 50V, Rg=50Q , Starting T 尸 25 C3. I sd 8.5A, di/dt = 300A/us, V dd BV dss, Staring T j=25 C4. Pulse Test : Pulse Width 300us, duty cycle 2%5. Essentially independent of operating temperature.PP0640SA - PP3584SCFig, 1* Gate charge test circuit & waveformSame type 蒔OUT5-DirQqdChaweflFig. 3, Unclamped Inductive switching test circuit & waveform050EV.R205B11Page 3www.prwtekdevi(SEMIWILLFig* 4 Peak diode recovery dv/dt test circuit & waveform* dv/dt controlled by RiG* Is co nt Tided by pulse period(DRIWR)PACKAGE DIMENSIONSTO-220ABLUSymbolMillimetersInchesMin.Max.Min.Max.A3.564.830.1400.190A12.032.920.0800.115b0.381.020.0150.040bl1.141.780.0450.070C0.511.400.0200.055C10.360.610.0140.024D9.6510.670.3800.420E14.2216.510.5600.650e2.54BSC0.10BSCF2.543.050.1000.120G3.533.900.1390.154H12.7014.730.5000.580L5.846.860.2300.270L1-6.35-0.250
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