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单击此处编辑母版标题样式,单击此处编辑母版文本样式,第二级,第三级,第四级,第五级,*,望道中期报告,*,半导体太阳能电池受辐照后的少子寿命,周敏,物理学系,指导教师：陆昉,望道中期报告,争论目的意义,试验原理,初步的试验结果,下一步的争论打算,望道中期报告,方波脉冲测量,望道中期报告,存储时间，下降时间,可用公式,取近似,正弦信号,测量,望道中期报告,在满足条件,下可由公式,得出少数载流子寿命。.,测量,GaAs,时,还要除,去电容性导电的影响,望道中期报告,试验电路图,方波脉冲可变参量:,串联电阻,正向偏压,反向偏压,正弦波可变参量,串联电阻,信号幅值,信号频率,我们先测量一般Si二极管的少数载流子寿命然后测GaAs太阳能电池pn结,试验电路图,R,Si(方波脉冲)转变正反向电压结果,望道中期报告,试验误差的来源有公式的拟合。取,反向,V(r),正向,V(f),5,830.4,5,948.1,4.6,838.2,4.6,931.6,4.2,837.7,4.2,942.9,3.8,856.4,3.8,957.8,3.4,859.5,3.4,967.4,3,879.3,3,981,2.6,881.6,2.6,986.1,2.2,895.5,2.2,1004.4,1.8,909.5,1.8,1026.7,1.4,926,1.4,1011.1,1,948.1,1,833.4,T,望道中期报告,结果分析：转变电阻对结果影响不大。所承受的拟合公式原来就不是准确解，从电荷掌握方程动身对边界条件的选取都是近似，文献指出从连续性方程动身可得准确解，但含不易测量参数。,取 对每一组正反向电压曲线求解，误差大。线形拟合，正反向电压线形拟合结果有差异，正向拟合线形好。,全部的方波脉冲试验说明，此Si样品的少数载流子寿命能确定在9001000ns,5,7.79E-07,10,8.55E-07,4.5,7.75E-07,15,8.55E-07,4,7.62E-07,20,9.09E-07,3.5,7.44E-07,25,8.98E-07,3,7.17E-07,30,8.91E-07,2.5,6.93E-07,35,8.55E-07,2,5.89E-07,40,8.55E-07,1.5,3.22E-07,45,8.31E-07,1,-3.54E-07,50,8.34E-07,Si(正弦信号)转变幅值 和频率,望道中期报告,考虑电源内阻，串联电阻影响可无视,满足条件 前五组,增大幅值，结果接近方波脉冲。频率影响不大，可用该法测GaAs二极管。,GaAs(,方波脉冲,),：没有反向存储时间，不能测量！,望道中期报告,GaAs(正弦波)转变频率、电阻,望道中期报告,电容影响效应很大,GaAs-,正弦信号测量结果,望道中期报告,R,Ep,f(kHz),wt,Ir/If,20,5,8,1.31E-06,0.0656,0.08411,40,5,8,1.45E-06,0.0728,0.09333,60,5,8,1.80E-06,0.0907,0.11628,60,5,8,1.80E-06,0.0907,0.11628,60,4,8,1.49E-06,0.0748,0.10318,60,5,5,1.73E-06,0.05442,0.06977,60,5,6,1.43E-06,0.05379,0.06897,60,5,7,1.44E-06,0.06349,0.0814,60,5,8,1.62E-06,0.08163,0.10465,60,5,9,1.60E-06,0.0907,0.11628,60,5,10,1.88E-06,0.11791,0.15116,60,5,11,1.86E-06,0.12847,0.16471,全部的数据都满足条件,由于电容效应很大导致读取数据的困难，会引进很大误差。试验选取幅值最大，电阻和频率可调整到最正确状态进展测量。因此，估量该GaAs样品的少子寿命1.52us,下一步争论打算,用正弦信号测量受不同辐照的GaAs太阳能电池样品的少数载流子寿命，分析辐照对其寿命的影响以为进一步争论其与太阳能电池效率关系,参阅文献就正弦信号测量二极管少数载流子寿命的原理可从理论上分析试验结果及误差，改进测量结果,望道中期报告,参考文献,刘恩科，朱秉升，罗晋生等，半导体物理学第6版，北京：电子工业出版社，2023.8,刘树林，张华曹，柴常春，半导体器件物理，北京：电子工业出版社，2023.2,RAYMOND H.DEAN,CHARLESJ.NUESE,”A Refined Step-Recovery Technique for Measuring,Minority Carrier Lifetimes and Related Parameters in Asymmetric p-n Junction Diodes”.IEEE,NO.3,1971,E.M.Pell,”Recombination Rate in Germanium by Observation of Pulsed Reverse Characteristic”,崔国庆等，阶越反向恢复法测量PIN二极管少子寿命，电子器件，2023.12,崔国庆，王建华，黄庆安，秦明，PIN二极管少子寿命测试方法，电子器件，2023.6,王渭源，用阶越恢复法测定砷化镓结型p-n和m-s结两极管的载流子寿命，物理学报，1979.5,Harmonic Generation,Rectification,and Lifetime Evaluation with the Step Recovery Diode.Stewart M.Krakauert,member,IRE,望道中期报告,望道中期报告,Q&A,Thank you!,Step pn junction,望道中期报告,正向偏压下的,pn,结,望道中期报告,正向注入非平衡载流子,正向偏压时,pn,结势垒变化,望道中期报告,反向偏压下的,pn,结,pn,结的反向抽取作用,方波脉冲测量,望道中期报告,存储时间，下降时间,可用公式,取近似,由电荷掌握方程动身：,正弦信号,测量,测量,GaAs,时,还要除,去电容性导电的影响,Si方波脉冲转变串联电阻,望道中期报告,考虑到电源内阻的影响，试验中将串联电阻固定为 R=300,并消退了过充电流影响。,Si(方波脉冲)转变正向电压,望道中期报告,V(f),V(r),Ts/ln(1+If/Ir),If/Ir,5,1,948.1,2.34,4.6,1,931.6,2.18,4.2,1,942.9,1.94,3.8,1,957.8,1.71,3.4,1,967.4,1.50,3,1,981.0,1.27,2.6,1,986.1,1.06,2.2,1,1004.4,0.83,1.8,1,1026.7,0.59,1.4,1,1011.1,0.38,1,1,833.4,0.16,Si(方波脉冲)转变反向电压,望道中期报告,V(f),V(r),Ts/ln(1+If/Ir,),If/Ir,5,5,830.4,0.71,5,4.6,838.2,0.77,5,4.2,837.7,0.83,5,3.8,856.4,0.90,5,3.4,859.5,0.99,5,3,879.3,1.09,5,2.6,881.6,1.2,5,2.2,895.5,1.3,5,1.8,909.5,1.6,5,1.4,926.0,1.9,5,1,948.1,2.3,40,60,5,7.79E-07,0.226,0.25,40,60,4.5,7.75E-07,0.226,0.26,40,60,4,7.62E-07,0.226,0.27,40,60,3.5,7.44E-07,0.226,0.28,40,60,3,7.17E-07,0.226,0.29,40,60,2.5,6.93E-07,0.226,0.33,40,60,2,5.89E-07,0.226,0.36,40,60,1.5,3.22E-07,0.226,0.37,40,60,1,-3.54E-07,0.226,0.49,Si(正弦信号)串联电阻和转变幅值,望道中期报告,考虑电源内阻，串联电阻影响可无视,满足条件 前五组,增大幅值，结果接近方波脉冲,Si(正弦波)转变频率,望道中期报告,f/kHz,Vf,Vr,t,wt,If/Ir,5,10,3.84375,0.25,8.55E-07,0.05373,0.06504,5,15,3.84375,0.375,8.55E-07,0.08059,0.09756,5,20,3.84375,0.53125,9.09E-07,0.11417,0.13821,5,25,3.84375,0.65625,8.98E-07,0.14103,0.17073,5,30,3.84375,0.78125,8.91E-07,0.16789,0.20325,5,35,3.84375,0.875,8.55E-07,0.18804,0.22764,5,40,3.84375,1,8.55E-07,0.21491,0.26016,5,45,3.84375,1.09375,8.31E-07,0.23505,0.28455,5,50,3.84375,1.21875,8.34E-07,0.26192,0.31707,小结：正弦波测量结果与方,波脉冲比较相对偏小，对公,式的来源及其准确程度还有,待进一步推导。该测量结果,只能给出近似。,
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