防微振介绍参考文档课件

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,Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,*,Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,*,1,Vibration and Noise Design of Advanced Technology Facilities,Ahmad Bayat,P.E.,J.Byron Davis,Vibro-Acoustic Consultants,29 June 2004,1Vibration and Noise Design of,2,Vibration and Noise Design of Advanced Technology Facilities,Brief background on VACC,Vibration Design of Facilities,Problem Definition,Two Design Fundamentals,Noise Design of Facilities,Tool Hook-Up,Structural Evaluation,2Vibration and Noise Design of,3,Background on VACC,Our background,3Background on VACCOur backgro,4,Western U.S.:,Intel,Fabs LCE,C6,11,12,22,23;,Sandia Natl Labs,;,HP,Fort Collins;,Motorola,COM1,MOS12,and Flat Panel;,Micron,Lehi,Boise,and Mask Shop;,Atmel,;,Vitesse,;,Philips,Fab 25;,Microchip,(Phoenix);,NCR,Projects United States,Texas,:,Atmel,;,Motorola,ULSI/MOS13;,TI,DMOS5,DMOS6,Kilby Center;,AMD,Fab 25;,Samsung,;,Methodist Heart Center,(Lubbock),East Coast,:,IBM,(Burlington,East Fishkill);,Dominion,Semiconductor,;,Lucent,(Orlando);,Seagate,(Pitts.);,Natl Security Agency,(Ft.Meade),4Western U.S.:Projects Unite,5,California:,Intel,Fabs D2,SC1,SC2,and IMO;,Stanford University,;,AMAT,Bldg.s 2,3,92,Arques Center,Scott Campus;,IBM,San Jose;,IDT,;,LAM,Research,;,Vishay,/,Siliconix,;,National,Semiconductor,;,Linear,Technology,;,AT&T,;,UC,Campuses at,Berkeley,Davis,and,San Francisco,;,Lawrence,Berkeley,National Labs;,Lawrence,Livermore,Natl Labs/,National Ignition Facility,;,Projects US West Coast,Pacific Northwest:,Intel,Fabs D1B,D1C,RB1,15,and Pathfinder;,Hyundai,;,WaferTech,Camus;,Fujitsu,Gresham,;,LSI Logic,;,IDT,MASCA;,Maxim,;Seattle Ferry Terminal;,University of Washington,Cal Poly,San Luis Obispo;,International,Rectifier,;,UC,Irvine;,ST Microelectronics,5California:Projects US West,6,Projects Southeast Asia,Taiwan,R.O.C.,:,TSMC,Fabs 3,6,and 7;,WaferTech,;,Quanta,TFT;,Arima,;,Formosa,;,Nan,Ya,Fabs 1 and 3;,Winbond,;,Formosa,;,Macronix,;,OPTO,Fab;,AMAT,Taiwan;,Eagle,TFT Fab;,UMC,;,Powerchip,Fab 2;,Acer,;,Chunghwa Picture Tube,;,NanYa/Inotera,China,:,Motorola,Tianjin MOS17,MOS17-X,Korea,:,CTIS,Korea;,AMAT,Korea,Thailand,:,SMT,Malaysia,:WTM,/,Silterra,Singapore,:ST Microelectronics,AMK8,6Projects Southeast AsiaTaiw,7,Projects Europe,Scotland,:,Motorola,East Killbride,Ireland,:,Intel,Fabs 10,24,Italy,:,ST Microelectronics,Catania M6,France,:ST Microelectronics,Rousset,7Projects EuropeScotland:Mo,8,Problem Definition:Processes,Basic Research,Universities,National Labs,Corporate R&D,Semiconductors,Devices,Flat Panel Display Technologies,Pharmaceuticals,Biotechnology,Nanotechnology,Mature Processes,Developing Processes,Manufacturing,Microelectronics,Flat Panel Displays,Pharmaceuticals,Biotechnology Tools,Nanotechnology(coming soon),Vibration Design of Advanced Technology Facilities,8Problem Definition:Processes,9,Problem Definition:Why Vibration?,Submicron,manufacturing/R&D,usually in a,super-clean,environment,Sensitivity vs.power:100/100 rule,Marriage of“Beauty”and“Beast”,Vibration Design of Advanced Technology Facilities,9Problem Definition:Why Vibra,10,Problem Definition:Sources,Rotating machinery(tones/BB)unknown,Piping/ductwork turbulence(BB)unknown,Movement of people/materials(BB)known,Environmental sources usually known,Vibration Design of Advanced Technology Facilities,10Problem Definition:Sources,11,Local&Environmental Sources,11Local&Environmental Source,12,Tones vs.Broadband,“,Tones”,“,Broadband Random Excitation”,Vibration Design of Advanced Technology Facilities,12Tones vs.Broadband“Tones”“B,13,Tones vs.Broadband,t,t,Deterministic Sine Wave(tone),Frequency at Shaft Speed,Amplitude,Unbalanced Force,Vibration Design of Advanced Technology Facilities,13Tones vs.BroadbandttDetermi,14,1/3 Octave Band Data,Dominated by 30Hz tone,Dominated by 60Hz tone,Vibration Design of Advanced Technology Facilities,141/3 Octave Band DataDominate,15,1/3 Octave Band vs.Narrowband Data,Vibration Design of Advanced Technology Facilities,151/3 Octave Band vs.Narrowba,16,Importance of Tones,Vibration Design of Advanced Technology Facilities,16Importance of TonesVibration,17,Importance of Tones,Vibration Design of Advanced Technology Facilities,17Importance of TonesVibration,18,Problem Definition:Structures,Mega fabs(usually 10,000+m,2,CR),Sub-fabs(one-&two-level),stacked fabs,Mostly concrete,mostly cast-in-place,Structural isolation breaks(SIBs),Access floors,from 150mm to 1.7m,secondary structures for sensitive tools,Soil Dynamics,Vibration Design of Advanced Technology Facilities,18Problem Definition:Structur,19,Problem Definition:Structures FPD,FPD Panel Size Driving Vibration Design,Vibration Design of Advanced Technology Facilities,Newer Generations,Larger Substrates,Larger(Heavier)Tools,Larger(Longer)Fabs,Fab,Fab,Fab Footprint,19Problem Definition:Structur,20,Problem Definition:Structures FPD,FPD Panel Size
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