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Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,3/10/2020,#,Two-dimensional semiconductor,Two-dimensional semiconductor,1,Outlook,Electronics,of,2D,materials,1.,Scaling,of,the,semiconductor generation,2.,Electronic,engineering,of,TMDC,Strong confinement of monolayer TMDCs,Indirect to direct band gap transition,Excitonic transitions,Inversion symmetry breaking of monolayer TMDCs,1.,N,onlinearity (Piezo, SHG),2. Nonequivalent valley index,OutlookElectronics of 2D mater,2,Insulator, semiconductor and conductor,Insulator, semiconductor and c,3,S,emiconductor and,human,daily,life,Semiconductor and human daily,4,Point,-contact,transistor-first,transistor,ever,made,The first point-contact transistor.,Point-contact transistor-first,5,Technology generation,-need,broad,exploration,45,nm,2007,22,nm,2011,32,nm,2009,14,nm,2013,10,nm,2015,7,nm,2017,Beyond,2020,QW,III-V,device,Carbon,Nanotube,1,nm,diameter,Graphene,1,atom,thick,Technology generation-need bro,6,Nature Nanotechnology 6, 147 (2011),Why,2D,semiconductor,Nature Nanotechnology 6, 147 (,7,From Wiki,Molybdenite,From WikiMolybdenite,8,Nature Nanotech. 7, 699 (2012),Different stacking phases of the MoS,2,Nature Nanotech. 7, 699 (2012),9,Cleaved by blade and tweezers,Cleaved by blade and tweezers,10,Single,-layer,MoS,2,transistors,Nature Nanotechnology 6, 147 (2011),.,Single-layer MoS2 transistorsN,11,MoS,2,transistors,with,1,nm,gate,lengths,Science,354, 99 (2016).,MoS2 transistors with 1 nm gat,12,Wafer,scale,monolayer,MoS,2,Nature,520,656,(201,5,),Wafer scale monolayer MoS2Natu,13,Carbon,nanotube,computer,Inorganic,n,anowire,Carbon,nanotubes,Precisely,place,and,orientation,Complex,fabrication,techniques,Nature,501,526,(201,3,),Carbon nanotube computerInorga,14,S,elf-assembly,graphene-MoS,2,-graphene heterostructures,Nature,Nanotechnolgoy,DOI,:,10.1038/NNANO.2016.115.,Self-assembly graphene-MoS2-gr,15,TEM,characteristics,Nature,Nanotechnolgoy,DOI,:,10.1038/NNANO.2016.115.,TEM characteristicsNature Nano,16,Transistor,of,graphene/MoS,2,/graphene,Nature,Nanotechnolgoy,DOI,:,10.1038/NNANO.2016.115.,Transistor of graphene/MoS2/gr,17,Self,-assembled,2D,circuit,Nature,Nanotechnolgoy,DOI,:,10.1038/NNANO.2016.115.,Self-assembled 2D circuitNatur,18,Outlook,Electronics,of,2D,materials,1.,Electronic,engineering,of,TMDC,2.Transistors,built,on,black,phosphorous,Strong confinement of monolayer TMDCs,Indirect to direct band gap transition,Excitonic transitions,Inversion symmetry breaking of monolayer TMDCs,1.,N,onlinearity (Piezo, SHG),2. 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Nonequivalent valley index,OutlookElectronics of 2D mater,37,Symmetry for phase and layer dependent,Bulk 3R,Bulk or even-layers 2H,Monolayer,With inversion symmetry,Indirect bandgap,Without inversion symmetry,Indirect bandgap,Without inversion symmetry,D,irect bandgap,Symmetry for phase and layer d,38,arXiv: 1304.4289v1 (2013),Angular dependent SHG of monolayer MoS,2,WiKi,arXiv: 1304.4289v1 (2013)Angul,39,SHG determines the grain size,Science 344, 488 (2014),SHG determines the grain size,40,Science 344, 488 (2014),SHG,mapping,SHG vs TEM,DF,-STEM,Science 344, 488 (2014)SHG map,41,Layer number dependence of SHG,Nano Lett. 13, 3329 (2013).,Layer number dependence of SHG,42,SHG,from,3R,stacking,phase,Light,:,Sci.,&,Appl.,5,e16131,(2016),.,SHG from 3R stacking phaseLigh,43,Light,:,Sci.,&,Appl.,5,e16131,(2016),.,Layer number dependence of SHG,Light: Sci. & Appl. 5, e16131,44,Light,:,Sci.,&,Appl.,5,e16131,(2016),.,Layer number dependence of SHG,Light: Sci. & Appl. 5, e16131,45,Piezoelectricity of MoS,2,Nature 514, 470 (2014).,J. 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Nanotech.,11, 598, (2016).,Electrical valley generation a,56,WS,2,/(Ga, Mn)As heterostructure,No defect emission.,Suppression of B exciton emission.,Nat. Nanotech.,11, 598, (2016).,WS2/(Ga, Mn)As heterostructure,57,Electrical Valley excitation in WS,2,Outward B,Inward B,= -14.8%,= 16.2%,Nat. Nanotech.,11, 598, (2016).,Electrical Valley excitation i,58,Magnetic field dependent,Nat. Nanotech.,11, 598, (2016).,Magnetic field dependentNat. N,59,Valley exciton generation efficiency,Non-perfect spin polarization.,Valley scattering.,Joule heating.,Nat. 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I.),Annihilation TI surface states,disadvantages,No gap,Too large gap,Low mobility,unstable,Surface,oxidation,unstable,Surface contamination,vdWs heterostructuresGraphene,65,Thank,you,for,your,attention.,Yu Ye,(,叶堉）,ye,_yu, you for your attention.Y,66,
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