plasma原理PPT课件

Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,.,*,等离子技术讲座:,等离子原理及其应用,PLASMA TRAINING PROGRAM,1,.,目录,Agenda,等离子技术在高级封装工业的应用,Application of Plasma Technology in Advanced Packaging Industries.,等离子技术简介,Introduction to Plasma Technology,March,公司产品介绍,Products of March Plasma Systems,2,.,等离子技术在高级封装工业的应用,Plasma Application,in Advanced Packaging Industries,3,.,综述,Overview:,微电子工业,Microelectronic Industry,Flash, EEPROM,DRAM, SRAM,Analog/Linear,Microcontrollers, Microprocessors, Microperipherals,ASIC,光电子工业,Optoelectronic Industry,Laser Diodes,Fiber Assembly,Hermetic Packaging,MEMS,印刷电路工业,Printed Circuit Industry,Printed Circuit Board,4,.,集成电路封装面临的挑战,IC Assembly and Packaging: Specific Challenges,不良的芯片粘结,Poor Die Attach,Insufficient Heat Dissipation Due to Poor Die Attach,不良的导线连接强度,Poor Wire Bond Strength,Contamination on Bond Pad,覆晶填料,Flip Chip Underfill,Fillet Height of Underfill,Void in Flip Chip Underfill,剥离,Delamination,Laminate Materials Releasing Moisture,Metal Leadframe Oxidation,印刷电路板孔中的残余物,Smearing in Printed Circuit Boards,打印记号,Marking,5,.,等离子体应用,Plasma Applications,表面污染物去除,Contamination Removal,Wire Bonding,Encapsulation,Ball Attach,(Contamination Sources: Fluorine, Nickel Hydroxide, Photoresist, Epoxy Paste, Organic Solvent Residue, smear in PCB, and scum),表面活化,Surface Activation,Die Attach,Encapsulation,Flip Chip Underfill,Marking,表面改性和刻蚀,Surface Modification and Etch,Fluxless Soldering,Cladding layer removal on fiber,6,.,表面活化: 芯片粘结,Surface Activation: Die Attach,Proper Die Attach Critical,Heat Dissipation,Delamination,Plasma Treatment of Substrate Prior to Die Attach,Promotes Adhesion of Epoxy,Removes Oxidation For Good Solder Reflow,Better Bond Between Die and Substrate,Better Heat Dissipation,Minimizes Delamination,7,.,污染物去除: 导线连接,Contamination Removal: Wire Bonding,Poor Wire Bond Strength,Contamination,Oxidation,Smaller Bond Pad Pitches,80,m,m to 25,m,m,Higher Ratio of Contamination to Pad and Wire,Deformation Welding Inhibited By,Physical Process: Contaminants Act As Physical Barrier,Chemical Process: Contaminants Form Bonds With Surfaces and Minimize Adhesion,Epoxy Resin Bleedout,8,.,污染物去除: 导线连接,Contamination Removal: Wire Bonding,Plasma Processing Removes Trace Contamination and Oxidation From Substrates,Metal,Ceramic,Plastic,Wire Bond Strength Significantly Increased,Throughput Increased: Lower Pressure Required,9,.,污染物去除和表面活化: 封装,Contamination Removal and Surface Activation: Encapsulation,Molding Compound Must Adhere To Different Compounds,Substrate Material,Solder Mask,Die,Metal Bond Pads,Several Materials Bonding to One Another,Delamination Can Result From Poor Surface Activity and Contamination,10,.,Delamination Biggest Challenge For Organic Based Substrates,Laminate Materials Absorb Water From Air and the Flux Residue Removal Process,Trapped Moisture Released From High Temperatures: Use or Soldering,Oxidation on Metal Leadframes Can Inhibit Adhesion of Frame to Mold,Plasma Treatment of BGA Packages, Other Polymer Substrates, and Metal Leadframes,Improves Surface Activity,Achieves Good Adhesion,Minimizes Delamination,污染物去除和表面活化: 封装,Contamination Removal and Surface Activation: Encapsulation,11,.,表面活化: 填料,Surface Activation: Underfill,Underfill Required in Flip Chip,Minimize Thermal Coefficient of Expansion (CTE) Mismatch Between Die and Substrate,Challenge,Void Free,Wicking Speed,Difficult with Large Dies and High Density Ball Placement,Plasma Treatment Increases Surface Energy,Promotes Adhesion,Increasing Wicking Speeds,Decreased Voiding,12,.,Presence of Oxides,Inhibits Wire Bonding,Limits Good Die Attachment,Inhibits Solder Reflow,Plasma Treatment Reduces Metal Oxides,Improves Wire Bond Strength,Improves Die Attachment,Improves Solder Reflow,氧化物去除,Oxides Removal,13,.,印刷线路板上的残余物清除,Desmearing in PCB,Smearing in Printed Circuit Boards (PCB),Vias Mechanically or Laser Drilled,Laminate Material (Epoxy Resin) Is Smeared Over Edges Of Inner Metal Conductor Lines,Subsequent Plating Of The Vias Must Electrically Connect All The Conductor Lines,Smeared Resin Must Be Removed To Ensure Good Electrical Contact,Plasma Treatment Removes the Epoxy Resins Producing Carbon Dioxide and Water,14,.,集成电路封装中等离子工艺的应用,IC Assembly and Packaging: Plasma Solutions,Improves Die Attach,Improved Wire Bond Strength With Minimal Process Requirements,Effective Encapsulation of Metal and Organic Based Packages,Minimizes Voids in Flip Chip Underfill,Desmearing in Printed Circuit Boards,15,.,等离子工艺的其它应用,Other Plasma Applications,Surface Activation of Numerous Materials: Polymers, and Metals,材料表面的活化,Thin Film Etch: Al, Si, SiO,2, Si,3,N,4, W, WSi,x,Organic Removal,去除有机污染物,Oxide Removal,去除氧化物,Residual Fluorine Removal,去除氟的残物,Hydrophilation,Hydrophobation,Plasma polymerization,PECVD,16,.,关键参数,Critical Product Parameters,Product Type,处理方式,Metal vs. Laminate,Chemical Sensitivity,Temperature Sensitivity,Product Handling,产品放置,Magazine,Single Strip,Process Required,工艺的要求,Contamination Removal,Surface Activation,Throughput,产量的要求,Uniformity,均匀性要求,17,.,等离子工艺,参数,Parameters For Plasma Processing,Power Supply Frequency and Power,电源的功率和频率,Chamber and Electrode Configuration,腔体的结构,Pressure,气压,Gas and Concentration,工艺气体的选择,Time,处理的时间,Pumping Speed,真空泵的速度,Product Positioning,产品的位置,Parameters Function of Product Type,18,.,单一工艺不适合所有的应用,Single Process Will Not Work For All Applications,等离子技术及集成电路封装工艺的知识是成功应用的,关键,Knowledge Of IC Package and Plasma Technology Critical For Successful Application,MARCH,拥有等离子应用的专家解决你的问题,March Maintains Experts Trained In Plasma Technology To Solve Your Problem,March,19,.,等离子技术,Plasma Technology,20,.,等离子体简述,Plasma: What, Why, How,什么是等离子体,What?,Gas Phase Mixture,Consists of: Neutral, Physically Active and Chemically Reactive Species,如何工作,How?,By Physical Bombardment and Chemical Reaction to,Remove Contamination,Activate Surface,Etch,为什么要用等离子体技术,Why?,Improves Yields and Enhances Reliability of IC Packages,Improves Adhesion of Wire Bonds, Die Attach, and Molding,Ease of Use, Environmentally Benign, Low CoO,21,.,什么是等离子体,What is a Plasma?,Fourth State of Matter,22,.,固态,液态,气态,等离子态,Solid,Liquid, Gas Plasma,Energy Energy,Energy,什么是等离子体,What is a Plasma?,23,.,等离子体的组成,Components of a Plasma,电子,Electrons,离子,Ions,Positive,Ar + e,-,Ar,+,+ 2e,-,Negative,Cl,2,+ 2e,-,2Cl,-,自由基,Free Radicals:,CH,4,+ e,-,.,CH,3,+,.,H + e,-,光子,Photons,Ar + e,-,Ar,*,+ e,-,Ar + e,-,+ h,n,中性粒子,Neutrals,24,.,等离子体特性,Plasma Properties,高能量态,High Energy State,Physical Work,Chemical Work,电中性的,Electrically Neutral,Equal Numbers Of Positive and Negative Species,Degree of Dissociation = 0.1 - 0.01%,Electrically Conductive,25,.,表面反应机理: 物理反应,Surface Reaction Mechanisms: Physical,Physical,Sputtering - Argon Plasma,Substrate Placed on (-) Electrode,Ar,+,Ion Attracted to (-) Electrode,Impact Force Removes Contamination,Advantages,Non-Chemical Reaction: No Oxidation,Pure Substrate Remaining,Disadvantages - Easy to Minimize,Substrate Damage: Impact, and Overheating,Poor Selectivity,Low Etch Rate,Contaminant Redeposition,26,.,表面反应机理: 化学反应,Surface Reaction Mechanisms: Chemical,Plasma Generated Reactive,Chemical Species,Source Chemicals Include:,H,2, O,2,and CF,4,Ionized Source Chemical,Produces Reactive Species,Gas Phase Products Produced From Reactions with Substrate Surface,Advantages,High Cleaning Speed,High Selectivity,Effective for Organic Contaminants,Disadvantages - Oxides Can Be Produced,27,.,表面反应总结,Summary of Surface Reaction Mechanisms,28,.,等离子技术的优点,Advantages of Plasma Treatment,Very Effective for Surface Cleaning, Activation, and Etching,Environmentally Friendly - Low Gas Flow,Non-Hazardous,非危险,No Aqueous Chemicals Used,No Personnel Exposure to Chemicals,Three Dimensional Treatment Capability(3D,处理),Controllable,Low Cost Of Ownership,Minimal Maintenance,Ease of Use - Automated,High Uniformity and Reproducibility,29,.,等离子工艺,Plasma Process,气相-固相表面相互作用,Gas Phase - Solid Phase Interaction,Physical and Chemical,分子级污染物去除,Molecular Level Removal of Contaminants,30 to 300 Angstroms,可去除污染物包括,Contaminants Removed,难去除污染物包括,Difficult Contaminants,Finger Prints,Flux,Gross Contaminants,Oxides,Epoxy,Solder Mask,Organic Residue,Photoresist,Metal Salts (Nickel Hydroxide),30,.,等离子体的产生,Generating a Plasma,31,.,等离子体的产生,Generating a Plasma,Gas To Be Ionized,Chamber With Electrodes,Materials,Aluminum,Stainless Steel,Glass: Quartz, Pyrex,Configuration,Barrel,Cylindrical,Usually Glass,External Electrodes,Parallel Plate,Box,Internal Electrodes: Powered, Grounded, or Floating,Custom,32,.,等离子体的产生,Generating a Plasma,Vacuum Pump,MilliTorr Process Requirements (50mTorr - 500 mTorr),Rapidly Remove Byproducts,Rotary Vane Pump,Roots Blower,Power Supply,Energy Source,Various Frequencies,2.45 GHz,13.56 MHz,40 kHz,DC,Various Powers,33,.,等离子体的重要特性,Important Properties of a Plasma,等离子工艺优化,Effective Plasma Processing Requires Optimum:,Physical Processes,Chemical Processes,等离子工艺参数,Plasma Properties That Dictate Process Performance:,Ion Density,Ion Energy,DC Bias,34,.,等离子体的电子和离子特性,Plasma Electron and Ion Properties,离子密度,Ion Density,Number of Ions per Unit Volume,Typically,1 Ion per 10,000 Neutrals,100 Radicals per 10,000 Neutrals,Higher Ion Density = Higher Number of Reactive Species,High Number of Active Species = Increased Speed,and Uniformity,Requires Efficient Coupling of Power,35,.,等离子体的电子和离子特性,Plasma Electron and Ion Properties,离子能量,Ion Energy,Energy of Ion To Do Work = Sputtering,Sputtering,Charged Species Collides With Surface,Energy Sufficient To Break Bonds,Surface Material Released,Narrow Range,Excess Ion Energy = Unwanted Sputtering,Too Low Ion Energy = No Sputtering or Slow Process,36,.,等离子体的电子和离子特性,Plasma Electron and Ion Properties,直流偏压,Self DC Bias,Negative DC Bias At Power Electrode,Capacitively Coupled,Electrons Respond to Alternating Electrical Field,Capacitor Prevents Electron Flow At Power Electrode,Electrons At Ground Electrode Flow To Ground Potential,Electron Build Up At Electrode Causes Potential Difference Between Powered and Ground Electrodes = Self DC Bias,DC Bias,Increases Ion Energy,Directionality of Ions,Important Parameters: Pressure, Power, Process Gas,37,.,等离子处理模型,Plasma Modes,Direct,Sample Placed Directly In Discharge,Samples Placed On Ground or Powered,Electrodes: Application Dependent,Aggressive,Downstream (Shielded),Plasma Generated Downstream Of Samples,Gas Phase Active Species Directed To Sample,Ions Removed,Radicals and Photons Perform Work,Reactive Ion Etch (RIE),Direct and Anisotropic,Samples Placed On Powered Electrode: Self Bias,38,.,Direct Plasma: Argon (Ar),39,.,Direct Plasma: Oxygen (O,2,),40,.,Downstream: Ion-Free Plasma,41,.,Downstream: Ion-Free Plasma,42,.,等离子处理模型,Plasma Modes,Reactive Ion Etch (RIE),Direct and Anisotropic,Samples Placed On Powered Electrode: Self Bias,43,.,成功应用的关键参数,Critical Parameters For Successful Application,Power Supply Frequency and Power,Chamber and Electrode Configuration,Pressure,Gas and Concentration,Time,Pumping Speed,Product Positioning,Parameters Function of Product Type,44,.,电源功率及频率,Power Supply Frequency and Power,General Trend:,Higher Frequency = Lower Ion Energy,Higher Frequency = Higher Ion Density,Higher Power,Increases Etch Rate,Increases Temperature,Power Supplies,DC,Low Frequency (40 kHz - 100 kHz),Medium Frequency (13.56 MHz),High Frequency (2.45 GHz),45,.,为什么选择频率13.56,MHz?,Frequency: Why 13.56 MHz ?,Ion Energy,Ion Density,Power Frequency,DC40-100 kHz13.56 MHz2.45 GHz,46,.,真空腔及电极组合,Chamber and Electrode Configuration,Barrel,External Electrodes,Non-Uniform Plasma,Parallel Plate,Internal Electrodes,Polarity,Powered,Higher Etch Rate, Higher Temperature, Lower Uniformity,Ground,Lower Etch Rate, Lower Temperature, Higher Uniformity,Floating,47,.,气体及浓度,Gas and Concentration,Argon (Ar),Inert,Physical Process: Surface Bombardment,Ar + e,-,Ar,+,+ 2e,-,Ar,+,+ Contaminant Volatile Contaminant,Two to Five Nanometers Removed,Applications: Oxide Removal, Epoxy Bleedout,Oxygen (O,2,),Chemical Process: Oxidation of Non-Volatile Organics,O,2,+ e,-,2O,.,+ e,-,O,.,+ Organic CO,2,+ H,2,O,Rate Function of Gas Concentration = High Pressure,Can Oxidize Surfaces and Damage Laminates,Minimize With Ar or Ar/O,2,48,.,气体及浓度,Gas and Concentration,Hydrogen (H,2,),Chemical Process,Applications,Remove Oxidation On Metals,Clean Metals Without Oxidation,Carbon Tetrafluoride (CF,4,),Normally Mixed With Oxygen,Chemical Process,Free Radicals React = CO,2, H,2,O, and HF,Higher Etch Rate = Higher Pressure,Other Gases: Helium, Nitrogen, Forming Gas, Sulfur Hexafluoride,49,.,气体及浓度,Gas and Concentration,化学清洗工艺,化学清洗工艺,物理清洗工艺,50,.,气体压力,Pressure,Average Force Of Gas Molecules On Chamber Wall,Chamber Pressure,Gas Flow,Outgassing Rate,Pumping Speed,In General,Higher Pressures (200 - 800 mTorr) = Chemical Processes,Higher Pressure = Larger Concentration of Reactive Species,High Concentration = Faster Etch Rates,Lower Pressures (50 - 200 mTorr) = Physical Processes,Lower Pressure = Longer Mean Free Path,Long Mean Free Path = Higher Energy Of Ions,51,.,处理时间,Processing Time,Longer Process Time = More Material Removed,Balance Process Time With,Power: Higher Power = Faster Etch Rate,Pressure: Higher Pressure = Faster Etch Rate,Gas Type and Concentration,Chamber Electrode Configuration,Minimize Time = Maximize Throughput,52,.,样品位置,Product Positioning,Direct Open Placement On Shelves,Carrier or Magazine,Require Lower Pressures,For Longer Mean Free Paths,Easy To Get Reactive Species Into Carrier,Chemical Or Physical Process,Pitch Is Critical,Uniformity Challenges,53,.,在清洗盒中处理,Treatment In,Magazine,Typical Plasma Condition:,Low system pressure (about 100,mTorr,) is required.,Increase the mean free path,Decrease the hot spots in chamber,Pitch should be larger than 6 mm.,The open slot on the side wall of magazine is required.,54,.,真空泵速度,Pumping Speed,Pump Required To Maintain Vacuum,Sweep Away Plasma Byproducts,Minimize Re-contamination,55,.,等离子工艺中可能的问题: 温度,Plasma Problems: Temperature,Plastic Parts are Susceptible to High Temperature,Factors That Effect Temperature,Substrate Material of Construction,Conductive - Metal Leadframes,Nonconductive - BGA,Placement of Parts on Electrode,Ground: Cooler Temperature, Longer Process Times,Powered: Hotter Temperature, Shorter Process Times,Process Power and Frequency,Higher Power = Higher Temperature,Lower Frequency = Higher Temperature,40 kHz 13.56 MHz,Process Gas and Gas Flow,Higher Gas Flow = Lower Temperature,56,.,等离子工艺中可能的问题: 温度,Possible Problems In Plasma: Temperature,Factors That Effect Temperature,Process Time,Longer Process Time = Higher Temperature,Chamber Temperature Typically Solid Surface Energy,Liquid Forms Spherical Shape,High Surface Energy Solid (Hydrophilic),Liquid Surface Tension Solid Surface Energy,Liquid Forms Low Profile Flatter Droplet,View Droplets Of Liquid On Surface,Line Tangent To Curve Of Droplet,Angle Between Tangent Line and Solid Surface,60,.,March,等离子技术,Plasma Technology,(Not All Plasma Systems Are The Same),+,集成电路封装技术,IC Packaging Technology,(Not All Packages Are The Same),成功应用,Successful Application of Plasma Technology for Integrated Circuit Packaging,61,.,March,产品,March Products,62,.,Batch,vs.,Automated,Equipment Solutions,63,.,AP-1000e8,AP-1000,Batch System Solutions,64,.,AP-1000,Flexible Shelf Configuration,Complete System Enclosure,PLC Controller,Vertical Door Option,e8 Option,CE and SEMI S2-93 Compliant,Applications,Magazine Treatment,Auer Boat Processing,Wafer Cleaning,MCM Carriers,Boards,65,.,AP 1000 Vertical Door,66,.,Higher throughputs,Improved uniformity,Matrix/Array,Pkgs,Metal,Leadframes,AP-1000e8,67,.,MultiTRAK,ITRAK,Automated System Solutions,XTRAK,68,.,Automated System Solutions,Unparalleled Uniformity,Compact Chamber Design,Balanced Gas Flow,Unique Vacuum Exhaust,Guaranteed Repeatability,Strip by Strip Processing,Closed or Open Magazines,No Pitch Restrictions,Speed,Total Overhead Time: Seconds,Infeed,Vacuum and Plasma,Outfeed,69,.,Strip Sized Chamber,ITRAK,Width 38-78 mm,Length 178 mm - 235 mm,XTRAK,Width 16-154 mm,Length 76-305 mm,PLC Controlled with Touch Screen,Intuitive Graphical User Interface,Statistical Data Gathering (SEMI E-10),Complete System Enclosure,Full Front Access,Self-Contained Handling System,SMEMA 1.2,ITRAK and XTRAK,70,.,XTRAK System,71,.,XTRAK-IFP System,72,.,Multiple Strip Processing: Up to Seven,PC Controlled with Touch Screen,Intuitive Graphical User Interface,Statistical Data Gathering (SEMI E-10),Complete System Enclosure,Full Front Access,Compact Footprint,Self-Contained Servo Motor,Driven Handling System,SEMI S2-93,SMEMA 1.2,MultiTRAK System,73,.,Field Configurable,Number of Tracks,Width of Tracks,MultiTRAK System,74,.,Part Dimensions:,Width16mm - 154mm0.62” - 6”,