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1,Preparedby:BinLiu,Date:9/25/2005,镭射钻孔,培,培训教材,前言,LASER钻孔简,介,介,LASER钻机介,绍,绍,Microvia,制,制作工艺,Microvia,常,常见缺,陷,陷分析,目录,随着PCB向微型,和,和高密度,互,互连的方,向,向发展,,越,越来越多,制,制板采用,微,微导孔的,连,连接方式,实,实现高密,度,度互连,,而,而目前制,作,作微导孔,的,的主要方,法,法是laserdrill。如何,利,利用现有,镭,镭射钻机,制,制作出各,种,种高质量,的,的microvia,是现,在,在PCB,制,制造的迫,切,切任务。,前言,1、LASER分,类,类,100 nm,5th H,4th H,3rd H,Ar-Ion,2nd H,Nd:YAG,Nd:YAG,Nd:YAG,Nd:YAG Nd:YAG Nd:YLF,Wavelength,212 nm,266,nm,355 nm,488,nm,532 nm,1064 nm,VISIBLE,INFRARED,ULTRAVIOLET,1000 nm,10,000 nm,400 nm,750 nm,1321 nm,光谱图,Laser 钻孔,简,简介,激光类型,主,主要包括,红外光,和,紫外光,两种;,2、常见,的,的LASER激发,方,方式,Laser 钻孔,简,简介,LASER 类型,UV,激发介质,YAG,激发能量,发光,二,二极管,代表机型,:,:ESI5320,LASER 类型,IR(RF-Radio Frequency,),),激发介质,密封CO2气,体,体,激发能量,高频,电,电压,代表机型,:,:HITACHILC-1C21E/1C,LASER 类型,IR(TEA-Transverseexcitedatmospheric,横,横波激励,),),激发介质,外供CO2气,体,体,激发能量,高压,电,电极,代表机型,:,:SUMITOMO LAVIA1000TW,3.1、CO2的,成,成孔原理,利用红外,线,线的热能,,,,当温度,升,升高或能,量,量增加到,一,一定程度,后,后,如有,机,机物的熔,点,点、燃点,或,或沸,点时,则,有,有机物分,子,子的相互,作,作用力或,束,束缚力将,大,大为减小,到,到使有机,物,物分子相,互,互脱离成,自,自由态或,游离态,,由,由于激光,的,的不断提,供,供能量,,而,而使有机,分,分子逸出,或,或者与空,气,气中的氧,气,气燃烧而,成,成为二氧,化碳或水,气,气体而散,离,离去,由,于,于激光是,以,以一定直,径,径的红外,光,光束来加,工,工的,因,而,而形成微,小,小孔。,Absorption,and,Heating,Thermal,Conduction,Light,Melting,Liquid,Interface,Vaporization,Plasma Production,Laser 钻孔,简,简介,固态Nd,:,:YAG,紫,紫外激光,器,器发射的,是,是高能量,的,的紫外光,光,光束,利,用,用其光学,能,能(高能,量,量,光子),,破,破坏了有,机,机物的分,子,子键(如,共,共价键),,,,金属晶,体,体(如金,属,属键)等,,,,形成悬,浮,浮颗粒,或原子团,、,、分子团,或,或原子、,分,分子而逸,散,散离出,,最,最后形成,盲,盲孔。,吸收,破坏分子(原子)键,成孔,长链大分子,小粒子逃逸,Laser 钻孔,简,简介,3.2、UV的成,孔,孔原理,4、常见LASER的加工,材,材料,Epoxy,FR4,ARAMID,COPPER,BT,现已加工,的,的介质材,料,料包括:,RCC、1X1080、2X1080、2116、2X106,、,、ARAMID,Laser 钻孔,简,简介,吸收率,波长(um),Resin,Matte Cu,Glass,UV,IR,VISIBLE,0,0.1,0.2,0.3,0.4,0.5,0.6,0.7,0.8,0.9,1,0.2,0.3,0.4,0.5,0.6,0.7,0.8,0.9,1,1.1,1.2,各种材料都吸收,树脂吸收红外光强,玻璃反射,铜反射,由于不同,材,材料对各,类,类激光的,吸,吸收均不,相,相同,导,致,致LASER加工,混,混合材料,时,时的困难,。,。,Laser 钻孔,简,简介,4.1、,不,不同材料,对,对波长的,吸,吸收情况,(,(2000版本),Laser 钻孔,简,简介,4.2、,不,不同材料,对,对波长的,吸,吸收情况,(,(2001版本),Aspect Ratio,500 450 400 350 300,250 200 150 100 50,m,m,Thru Vias,Blind Vias,10:1,1:1,.1:1,UV YAG,CO,2,Photo-via,Mechanical,Drill,5、各种,方,方法加工,孔,孔直径的,范,范围,Laser 钻孔,简,简介,我司现有Laser 钻,机,机,HITACHI,LC-1C21E/1C,LC-2F21SE/1C,LC-2F212SE/2C,LC-2G212E/2C,LC-2G212BE/2C,SUMITOMO,LAVIA 1000TW,ESI,5320,5330,Laser 钻机,介,介绍,ESI5320,高频率低,功,功率脉冲,固态激光,激,激发装置,,,,无须外,部,部供气,“冷光”,,,,产生热,量,量少,Hitachi,RF Excited 密,封,封气体激,发,发,无须定期,换,换气,每四小时,需,需做精度,校,校正,SUMITOMO,外部供气,须定期换,气,气,加工时有,能,能量检测,和,和补打功,能,能,ESIUV Laser,对,对位系统1内,层,层靶标对,位,位,Laser 钻机,介,介绍,UV Laser刮内层靶标图形,定位补偿,方,方法,4 pointsallow correction ofx-y offset,rotation,scale,andkeystone,15.7 mil Through Hole,3 mil Hole,8 mil Pad,40 mil Pad,Laser 钻机,介,介绍,ESIUV Laser,对,对位系统2通,孔,孔对位,1.对位,标,标靶-圆形,2.对位,补,补偿类似ESI,Laser 钻机,介,介绍,HITACHI&SUMITOMOLaser对位系,统,统,Conformal Mask靶标,对,对位,LaserBeam,Galvo,UV Laser,CO2Laser,光学系统,Laser 钻机,介,介绍,Copper surface is cleaned and textured,ESIUV Laser,的,的钻孔参,数,数:,Laser 钻机,介,介绍,调整Laser焦,距,距,StepOne:DrillCopper,StepTwo:RemoveDielectric,25,m,m,50-100,m,m,Focusedspot,Small spot size,Highenergydensity,De-focused spot,Larger spotsize,Lower energydensity,Stoponinner copperlayer,Laser 钻机,介,介绍,Dielectric,Copper,Planes,Punching,Dielectric,Copper,Planes,Trepanning,Spiraling,Dielectric,Copper,Planes,ESIUV Laser,的,的钻孔参,数,数:,Cycle Mode,Burst Mode,StepMode,Laser 钻机,介,介绍,Hitachi&Sumitomo Laser的,钻,钻孔参数:,即对在一,个,个区域内,所,所有的孔,进,进行第一,个,个脉冲加,工,工,,完毕后,,再,再进行第,二,二个脉冲,加,加工,如,此,此类推。,即对一个,孔,孔进行所,有,有的脉冲,加,加工后,,才,才对下个,孔,孔进行加,工,工。,钻孔速度,HITACHI,max1200脉冲/,秒,秒,SUMITOMO,max 1000脉冲/秒,ESI,15K30K70K脉冲/秒,Laser 钻机,介,介绍,一阶盲孔,:,:,A、CO2 laserdrill,B、CO2 laserdirect drill,C、UV,direct drill,D、UV+CO2laser drill,Microvia,制,制作工艺,Microvia,制,制作工艺,二阶盲孔(钻Stacked via):,A、UVDirectdrill,B、UV+CO,2,C、Conformalmask+CO,2,+UV,D、UV+Conformalmask+CO,2,五、Microvia 缺,陷,陷分析,-缺,陷,陷类型,-产,生,生原因和,影,影响,-解,决,决方法,Laser Microvia缺陷,分,分析,(1)UnderCut,(2)Delaminate,(4)Remained,Glass Fiber,(5)RemainedResin,(8)Void,(7)Damage,(6)MicroCrack,Barrel Shaped InnerHole,Laser Microvia缺陷,分,分析,Laser 盲孔,缺,缺陷,PROBLEMS,Under Cut,Delaminate,Cause and Effect,Heataccumulation from RCC copper surface,Impact to the RCC surface byLaser Beam,(1)UnderCut,(2)Delaminate,Laser Microvia缺陷,分,分析,Solution,Short pulsewidth,Reduce the pulseenergy,LASER Beam,Laser Microvia缺陷,分,分析,PROBLEMS,Barrel Shaped InnerHole,Cause and Effect,Reflection fromholebottom,Incorrect position of Lasermode(single,mode)tothehole,Barrel Shaped InnerHole,Laser Microvia缺陷,分,分析,Reflection,LASER,Beam,a,b,Single Mode,Laser Microvia缺陷,分,分析,Solution,Short pulse(lessthan less),Thebestsuitednumber of shots,Multi-mode Beam,Single-mode,Multi-mode,(top-flat),Laser Microvia缺陷,分,分析,PROBLEMS,RemainedGlass Fiber,Cause and Effect,Difference Nature against heat between,resin and glass,Solution,Highpeak powerprocessing,Cycle-mode processing,(4)Remained,Glass Fiber,Laser Microvia缺陷,分,分析,PROBLEMS,RemainedResin,Cause and Effect,a.Very thinsmearedresin onthebottomof,holenotreach sublimation point,(5)RemainedResin,Laser Microvia缺陷,分,分析,b.Unsuitabilityofresin thickness,c.Single-modeprocessing,60m,80m,Laser Microvia缺陷,分,分析,d.UnsuitabilityofLAS
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