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*,可编辑,*,*,可编辑,*,WAT,测量项目以及测试方法,2008/03/07,WAT 测量项目以及测试方法2008/03/07,WAT Introduction,WAT,是什么,WAT,系统介绍,3.WAT,测试项目及方法,WAT IntroductionWAT是什么,W,afer,A,cceptance,T,est,（晶片允收测试）,半导体硅片在完成所有制程工艺后，针对硅片上的各种测试结构所进行的电性测试。,通过对,WAT,数据的分析，我们可以发现半导体制程工艺中的问题，帮助制程工艺进行调整。,WAT,是什么,?,Wafer Acceptance Test（晶片允收测试）W,WAT,系统介绍,Manual Prober,Agilent 4284A CV Meter,Agilent 4156A IV Meter,Cascade Manual Prober,WAT系统介绍Manual ProberAgilent 42,WAT,系统介绍,Agilent 4070 system,TEL P8XL,Agilent 4070,WAT系统介绍Agilent 4070 systemTEL,WAT,系统介绍,HP 4070 Server,Agilent 81110A Pulse Generator,Agilent 4284A CV Meter,Agilent E4411B Spectrum Analyzer,Agilent 4070,内部结构,Agilent 3458A,Digit Multimeter,WAT系统介绍HP 4070 ServerAgilent 8,Wafer,Auto-Prober,Relay Metric,Server,EDA Server,Test Key,Probe card,SMU,PIN No,Data,Data,Product,information,Test Program,Control,command,DC tester,CV Meter,4070,Server,WAT,流程图,WaferAuto-ProberRelay MetricSe,WAT,测试项目,MOS device,Field Device,Junction,Gate Oxide,Resistor,Bipolar Device,Layout Rule Check,常见的几种器件结构,WAT测试项目MOS device常见的几种器件结构,MOS Device,MOS Device,WAT-测试项目方法课件,Item name,Method of measurement,Ids,Vd=Vg=Vdd,Vs=Vb=0,measure Id,Ids=Id/Width,Vt0,Vd=0.1V,Vs=Vb=0,sweep Vg from 0V to 3V,use maximum slope method,Vt0=X,intercept,1/2*Vd,Vt1,Vd=0.1V,Vs=Vb=0,sweep Vg from 0V to 2V,measure,Id,Vt1=VgId=0.1uA*Width/Length,Isub,Vd=Vdd,Vs=Vg=0,sweep Vg from 0 to Vdd to get,maximum Isub current,Ioff,Vd=1.1Vdd,Vg=Vs=Vb=0,measure Id,Ioff=Id/Width,Bvd,Vg=Vs=Vb=0,sweep Vd from 0V to Vdstop(3Vdd),measure Id,Bvd=VdId=0.1uA/um,以,NMOS,为例：,Item nameMethod of measurement,2.Field Device,2.Field Device,Item name,Method of measurement,Vt,Vd=1.1Vdd,sweep Vg from 0V to Vgstop(3Vdd),measure Id,Vt=VgId=10nA/um,Ileak,Vg=Vd=1.1Vdd,measure Id,Ileak=Id/Width,Vpt,Vg=1.1Vdd,sweep Vd from 0V to Vdstop(3Vdd),measure Id,Vpt=VdId=10nA/um,WAT Item Name(,以,Poly Nfield,为例,):,VtNfpS(field Vt),IleakNfpS,VptNfpS(punchthrough Vt),Item nameMethod of measurement,THANK YOU,SUCCESS,2024/11/11,14,可编辑,THANK YOUSUCCESS2023/10/71,3.Junction,3.Junction,WAT Item Name(,以,N+/PW junction,为例,):,CNj,IleakNj,BvNj,Item name,Method of measurement,Cj,Vg=0V,Vb=GND,apply a 0.03V AC signal to measure C value,Cj=C/Area,Ileak,Vg=1.1Vdd,measure Ig,Ileak=Ig/Area,Bv,Vb=0,sweep Vg from 0V to Vgstop(3Vdd),measure Ig,Bv=VgIg=100pA/um,2,WAT Item Name(以N+/PW junctio,4.Gate Oxide,4.Gate Oxide,WAT Item Name(,以,PW gate oxide,为例,):,Cgpw,Toxpw,BvCgpw,Item name,Method of measurement,Cox,Vg=Vdd,Vb=GND,apply a 0.03V AC signal to measure C value,Cox=C/Area,Tox,Vg=GND,Vb=Vdd,apply a 0.03V AC signal to measure Cox value,Tox=(,o,*,ox,*Area)/Cox,Bv,Vb=0,sweep Vg from 0V to Vgstop(3Vdd),measure Ig,Bv=VgIg=100pA/um,2,NOTE:If there has a dummy capacitor,Cdummy should be subtracted.(Cox=Cox-Cdummy),WAT Item Name(以PW gate oxide为,5.Resistor,5.Resistor,Item name,Method of measurement,Rs,Vh=1V,measure Ih,Rs=(Vh/Ih)/Sqr,Sheet resistance(RsN+/P+/NW/Poly/Metal),Item nameMethod of measurement,Contact Resistance(RcN+/P+/Via),Item name,Method of measurement,Rc,Vh=1V,Vl=GND,measure Ih,Rs=(Vh/Ih)-(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)/Ncon,Note:Rc need to subtract active&Metal resistor,RsMetal can be ignored due to metal resistor is very small.,Contact Resistance(RcN+/P+/Vi,6.Bipolar Device,6.Bipolar Device,WAT Item Name(,以,NPN,为例,):,HfeNpn,BvNpn,Item name,Method of measurement,Hfe,Ib=1uA,Vce=Vdd,Hfe=Ic/Ib,Bv,Base floating,Sweep Vce from 0V to Vcestop(3Vdd),measure Ic,Bv=VceIc=1uA,WAT Item Name(以NPN为例):Item nam,7.Layout Rule Check,7.Layout Rule Check,PAD,PAD,NW/N+Poly/N+active/Metal bridge,WAT Item Name(,以,NW bridge,为例,):,IbriNW,Item name,Method of measurement,Ibri,Vh=1.1Vdd,measure Ih,Ibri=Ih,PADPADNW/N+Poly/N+active/Met,Thanks!,Thanks!,THANK YOU,SUCCESS,2024/11/11,27,可编辑,THANK YOUSUCCESS2023/10/72,
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