APD芯片介绍以

,Unit of measure,Annotation,*Footnote,Source:Sources,APD芯片及其应用,目录,概述,结构与工作原理,技术指标,典型特性曲线,产品计划,应用注意事项,应用实例,1 概述,1.1 术语,APD：avalanche photodiode,Avalanche effect 雪崩效应,Avalanche multiplication factor倍增因子,Excess noise过剩噪声,Punch through voltage开通电压,Breakdown voltage击穿电压,1.2 研究概况,Spectrolab,Laser components,1.2 研究概况,学术会议,网上资料,1.3 应用领域,PON/FTTx,SFP/SFF,Photon counting,Laser range finding,Military application,Other,1 概述,1.4 分类方法,工作波长,材料,结构,用途,1 概述,1.4 分类方法结构,2 结构及工作原理,2.1 平面结构,台面结构,P,+,InGaAs,P,+,InP,P,-,InGaAs,P,+,InP,SL,N,+,InP,N,+,InP,N,+,InP 衬底,P接触,N接触,增透膜,背照式平面结构,二维阵列结构,Guard-ring InGaAs/InP APD array,2 结构及工作原理,2.2 材料结构及电场分布,2.3 基本参数理论计算,倍增因子,击穿电压,开通电压,基本参数理论计算,增益带宽积,过剩噪声因子,剩噪电流,av=（tn+tp）/2,其中,理论计算示例,Vr(V),Ea1(kV/cm),Eth1(kV/cm),Ec1(kV/cm),Em1(kV/cm),k=/,M,F,26.86,7.930,21.14,464.88,466.63,7315.87,20255.56,0.3612,2.326284,1.843236,27.000,8.452,21.66,465.40,467.15,7369.43,20392.34,0.3614,2.34306,1.851418,28.00,12.156,25.37,469.11,470.86,7756.96,21379.56,0.3628,2.470154,1.912631,29.000,15.860,29.07,472.81,474.56,8158.05,22396.99,0.3642,2.613288,.980112,30.00,19.563,32.77,476.51,478.26,8572.90,23444.88,0.3657,2.77549,2.055017,31.000,23.267,36.48,480.22,481.97,9001.68,24523.46,0.3671,2.960603,2.138817,32.00,26.971,40.18,483.92,485.67,9444.57,25632.96,0.3685,3.173582,2.23341,33.000,30.674,43.88,487.62,489.37,9901.74,26773.58,0.3698,3.420924,2.341294,34.00,34.378,47.59,491.33,493.08,10373.34,27945.51,0.3712,3.711318,2.465811,35.000,38.082,51.29,495.03,496.78,10859.54,29148.94,0.3726,4.056656,2.611544,36.000,41.786,55.00,498.74,500.49,11360.50,30384.03,0.3739,4.473661,2.784942,37.00,45.489,58.70,502.44,504.19,11876.35,31650.92,0.3752,4.98661,2.995374,38.000,49.193,62.40,506.14,507.89,12407.24,32949.76,0.3766,5.632151,3.256992,39.00,52.897,66.11,509.85,511.60,12953.29,34280.67,0.3779,6.468325,3.592219,40.000,56.600,69.81,513.55,515.30,13514.65,35643.77,0.3792,7.592853,4.038814,41.00,60.304,73.51,517.25,519.00,14091.44,37039.14,0.3804,9.184024,4.665682,42.000,64.008,77.22,520.96,522.71,14683.76,38466.88,0.3817,11.60529,5.613303,43.00,67.711,80.92,524.66,526.41,15291.74,39927.05,0.3830,15.72995,7.219236,44.000,71.415,84.63,528.37,530.12,15915.47,41419.72,0.3842,24.31802,10.55035,45.00,75.119,88.33,532.07,533.82,16555.07,42944.94,0.3855,53.09516,21.68537,45.851,78.271,91.48,535.22,536.97,17111.93,44268.57,0.3865,94455.39,36512.77,45.85,78.274,91.48,535.2244,536.97,17112.59,44270.14,0.3865,-87337.3,-33758.9,2 结构及工作原理,2.4 工作原理,2 结构及工作原理,2.4 工作原理,击穿电压-开通电压差,2.5 模拟结果,10GHz APD增益带宽积曲线,过剩噪声因子,技术指标的比较,Neophotonics,ADTECH,Spectrolab,Emcore,响应度最小（A/W）,0.8,08,0.7,0.8,暗电流最大（nA）,50,40,20,100,击穿电压范围(V),4252,3555,30-40,40-60,结电容最大(pF),0.5,0.5,0.75,0.4,-3dB带宽最小(GHz),2.0,2.0,2.0,1.8,击穿电压温度系数（V/）,012,012,-,-,组件灵敏度最小（dBm）,-33,-,-,-,过载功率最小（dBm）,-5,-7,-,-,3 技术指标,3.1 极限额定值,序号,参数,符号,最小值,最大值,单位,测试条件及说明,2-1,偏置,电压,V,R,V,BR,V,2-2,正向电流,I,F,10,mA,2-3,输入光功率,P,in,6,dBm,2-4,贮存温度,T,stg,-40,100,2-5,工作温度,T,op,-40,95,3 技术指标,3.2 常温指标,序号,参数,符号,最小值,典型值,最大值,单位,测试条件,验证,3-1,响应度,R,e,8,A/W,V,R,=(V,BR,-2)V,=1310nm,Pin=1,W,每片抽5只,9,V,R,=(V,BR,-2)V,=1550nm,Pin=1,W,每片抽5只,3-2,暗电流,I,D,50,nA,V,R,=(V,BR,-2)V, Pi,n,=0W,100%,3-3,击穿电压,V,BR,42,52,V,I,R,=10,A,100%,3-4,击穿电压温度系数,0.09,0.12,V/,V,BR,/,T,每片抽5只,3-5,结电容,C,j,0.5,pF,V,R,=(V,BR,-2)V,f=1MHz,每片抽5只,3-6,-3dB带宽,BW,2,GHz,V,R,=(V,BR,-2)V,=1310nm,Pin=1,W,每片抽5只,3-7,击穿-开通电压差,18,V,每片抽5只,3-8,灵敏度,S,-33,dBm,Vapd_opt, BER=1E-12, 2.5Gb/s,PRBS=2,23,-1,=1550nm,ER=(910)dB,参考TIA,样品测试,3-9,过载功率,-3,dBm,Vapd_opt, BER=1E-12, 2.5Gb/s, PRBS=2,23,-1,=1550nm,ER=(910)dB,参考TIA,样品测试,3-10,灵敏度-电压,稳定,性,1,dB,在Vapd_opt附近2V内,参考TIA,样品测试,3 技术指标,3.3 全温指标,序号,参数,符号,最小值,典型值,最大值,单位,测试条件,验证,4-1,响应度,R,e,7.5,A/W,V,R,=(V,BR,-2)V,=1310nm,Pin=1,W,每片抽5只,8.5,V,R,=(V,BR,-2)V,=1550nm,Pin=1,W,每片抽5只,4-2,暗电流,I,D,500,nA,V,R,=(V,BR,-2)V, Pin=0W,每片抽5只,50,V,R,=(V,BR,-2)V, Pin=0W,T,a,=25,100%,4-3,击穿电压,V,BR,35,60,V,I,R,=10,A,每片抽5只,42,52,I,R,=10,A, T,a,=25,100%,4-4,击穿电压温度系数,0.09,0.12,V/,V,BR,/,T,每片抽5只,4-5,结电容,C,j,0.5,pF,V,R,=(V,BR,-2)V,f=1MHz, Pin=0W,T,a,=25,每片抽5只,4-6,-3dB带宽,BW,2,GHz,V,R,=(V,BR,-2)V,=1310nm, Pin=1,W,每片抽5只,4-7,击穿-开通电压差,18,V,T,a,=25,每片抽5只,4-8,灵敏度,S,-32,dBm,Vapd_opt, BER=1E-12, 2.5Gb/s,=1550nm, ER=(910)dB,PRBS=2,23,-1,参考TIA,样品测试,-33,Vapd_opt, BER=1E-12, 2.5Gb/s,=1550nm, T,a,=25, ER=(910)dB,PRBS=2,23,-1,4-9,过载功率,-3,dBm,Vapd_opt, BER=1E-12, 2.5Gb/s,= 1550nm, ER=(910)dB,PRBS=2,23,-1,参考TIA,样品测试,4-10,灵敏度-电压稳定性,1,dB,在Vapd_opt附近2V内,参考TIA,样品测试,4 典型特性曲线,4.1 表面扫描响应曲线,4 典型特性曲线,4.2 光电流/暗电流与偏压的关系,4 典型特性曲线,4.3 频谱响应曲线,4 典型特性曲线,4.4 不同波长下光/暗电流与偏压的关系,4 典型特性曲线,4.5 响应度与温度的关系,4 典型特性曲线,4.6 击穿电压与温度的关系,4 典型特性曲线,4.7 击穿电压温度系数,4 典型特性曲线,4.8 暗电流-温度曲线,4 典型特性曲线,4.9 光谱响应曲线,4 典型特性曲线,4.10 灵敏度与电压的关系,自产APD组件验证结果,4.10 结电容-电压关系曲线,4 典型特性曲线,4.12 小批量测试结果22批,4 典型特性曲线,4.11 小批量测试结果24批,自产APD芯片小结,技术指标与商用APD相当甚至更优，可替代,工作温度范围宽，直接测试到高温95下工作，可直接用于GPON、BPON等工作环境,成本低,验证需加速,不足：无M=1的平坦区,5 产品计划,基线化文件,6 应用注意事项,温度系数,耦合,压焊要求,7 典型应用,APD偏置,模拟,数字,激光测距,单光子探测,目标方向、距离、位置,阵列式光探测,APD偏置电路框图,简单的温度补偿电路,并联电阻与温度的关系,输出电压与温度的关系,APD偏置电压数字温度补偿电路框图,数字温度补偿网络框图,数字补偿电阻与温度的关系,数字补偿输出电压与温度的关系,APD数字温度补偿的控制过程,镜像电流补偿电路框图,一种突发模式光功率测量方法,激光测距,Single-Photon-Counting -Application,Geiger-mode single photon counting with detection probability greater than 50%.,Linear-mode photon counting for high dynamic range applications.,Ultra-low-noise analog optical detection.,Quantum key distribution.,High-performance Optical Time-Domain Reflectometer (OTDR).,Time-resolved emission detection for failure analysis.,Ultra-sensitive near-infrared Raman detection without fluorescence background.,Singlet oxygen detection.,Single-Photon-Counting,FEATURES,Suitable for near-infrared photon counting in either linear or Geiger modes.,Incorporates high-performance APD, thermoelectric cooler, thermistor, and optical fiber coupling optics in a compact hermetic package.,Single-photon timing jitter below 100 picoseconds RMS.,单光子探测芯片实例,Target Direction, Range and Position Finding PRODUCTS,Maximum Range 20km, Receiver aperture 40 mm, InGaAs Detector APD, Beam Divergence 0.50 mra; Weight w/o housing 0.85 kg; Dimensions 17.8 x 7.6 x 7.6 (cm),二维阵列APD光探测器,APD与PIN组合构成单阵列单元,二维阵列APD光探测器,