光学镀膜基础知识Eversion-课件

1李艳龙李艳龙FundamentalsonOpticalCoating1李艳龙FundamentalsonOpticalCo12Contentsn1.ABriefIntroductiononCoatingandCoatingsystemsn2.RudimentsofCoatingsystemsn3.Theprincipleandeffectofevaporationsourcen4.Know-Howsofcoatingn5.Coatingprocessandfilmthicknessmonitoringn6.Opticalknowledgeandcoatingprocessn7.Coatingmaterials2Contents1.ABriefIntroducti23nPart1.ABriefIntroductiononCoatingandCoatingsystems334Know-howonCoatingqCoatingmaterialsqSubstratesqFilmforming4Know-howonCoatingCoatingma45OpticalfilmcoatingmaterialsTransparentrangeRefractiveindexEvaporationmethods5Opticalfilmcoatingmaterial56Categoriesofsubstrates：Glass,Ceramics,Metals,Crystals,andPlasticCleaningofsubstrates：Detergent,Chemicals,Ultrasoniccleaning,ionicbombardment,Heating,Steam-cleaning,UVcleaningandOzonecleaning,etc.6Categoriesofsubstrates：Clea67FilmformingChemicallyPhysicallyChemicalvapordepositionPlatingElectrolysisAnodizingetc.VacuumvapordepositionIonplatingSputteringMBEetc.7FilmformingChemicallyPhysica78蒸鍍(Evaporation)&濺鍍(Sputtering)8蒸鍍(Evaporation)89Film Deposition1SprayingSubstrateMaterial2ElectroplatingSubstrateMaterialAnodeCathode3EvaporationMaterialSubstrateHeaterVacuumchamberCloud4SputteringMaterialSubstratePlasma9FilmDeposition1SprayingSubst910ThinFilmDepositionnThemechanismofthinfilmdepositioninvolveselectronicals(electrodes?)andsemi-conductors.Totakeadvantageofcertainpropertiesofthematerials,filmsformedbysomematerialswillbecoatedonthesurfaceofsubstrates.Thefilmformingprocessisthuscalledthinfilmdeposition.10ThinFilmDepositionThemech1011PVDPhysicalVaporDepositionnPVDmeansthinfilmdepositionconductedbyphysicalrulesinsteadofchemicalinteraction.nEvaporationandSputteringaretwoofthemostcommonlyappliedPVDmethods.1EvaporationMaterialSubstrateHeaterVacuumchamberCloud2SputteringMaterialSubstratePlasma11PVDPhysicalVaporDepositio1112WaystoRealizeEvaporationandSputtering12WaystoRealizeEvaporation1213EvaporationSystemsMaterialSubstrateHeaterVacuumchamberCloud13EvaporationSystemsMaterialS1314Coatingsystemschamber14Coatingsystemschamber1415Coatingsystemschamber15Coatingsystemschamber1516EvaporationAccessoriesnFilamentsnWboatsnMoboats16EvaporationAccessoriesFilam1617SputteringMaterialSubstratePlasma17SputteringMaterialSubstrateP1718PLASMATheFourthHabtitusofSubstance18PLASMATheFourthHabtitusof1819Thenatureofplasman1.Asawhole,theplasmaisinaneutralstatus,thatmeansthenegativeparticlesandpositiveparticlesareequalinamount.n2.Theplasmaisconstitutedbymanyparticles,sowhensomeoftheparticlesareaffected,othersorthewholeplasmawillbealsoeffected.ThisiscalledGroupEffectofPlasma.n3.Thermalandelectricconduction19Thenatureofplasma1.Asa1920Principleonsputtering(examplary)n1.ArAtomicdissociationArAr+e2.Electronisacceleratedtoanodestatus,duringtheprocess,newdissociationwilltakeplace.n3.Arionisacceleratedascathodtostrikeoutthetargetparticletoformafilmonthesurfaceofthesubstrates.20Principleonsputtering(exa2021SputteringVacuumpumpTakes place in a vacuumchamberElectrical charge is formed between the substrate and cathodeGas is injected in chamberIons hit the target andknock off atomsTarget atoms land(condense)on substrate to form a thin filmTargetMaterial(Cathode)SubstrateEnergyIons move in plasmaGasPlasmaGas ionizes-forms a plasma21SputteringVacuumpumpTakesp2122TargetErosion22TargetErosion2223IntroductiononVacuumCoatingSystems:n1.Vacuumsystemsn2.Evaporationsystemsn3.Controlsystemsn4.Aidsystems23IntroductiononVacuumCoati23241.VacuumSystem241.VacuumSystem2425Vaporationsystems：ThermalsystemsSputteringIADIonAidDeposition25Vaporationsystems：2526ASketchonCoatingsystemsn1Heatingn2Glassn3Evaporationsourcen4Phosphorizer26ASketchonCoatingsystems12627Thermalevaporation27Thermalevaporation2728Electron Beam EvaporationElectronbeamevaporationisaformofthermalevaporation,andalsothemostcommonlyappliedmethodtocreatethinfilms.28ElectronBeamEvaporationEle2829SketchonElectrongun29SketchonElectrongun2930APS1104Leybold30APS1104Leybold3031313132APS1104Vacuumchamber32APS1104Vacuumchamber3233Lensesholder33Lensesholder3334IAD-IonAidDepositionnIADAtthesametimewhenelectronbeamevaporationistakingplace,ionsareusedtostrikethethinfilmtomakeabetterconstitution.ThisprocessiscalledIAD.34IAD-IonAidDepositionIAD3435ReactiveIonPlatingnRIPisaprocessofcombinedevaporation:intheprocessofelectronicgunevaporation,boththeevaporatedsourcematerialandplasmasourcefilamentaredissociatedintoplasmagasnIonsandsourcematerialintheplasmaionizationareacceleratedintheelectricfieldintothevapordischargeplasmanMeanwhiletheionsandelectronsarecollidingtoeachotherandreactedtoformafilmonthesurfaceofthesubstrates.35ReactiveIonPlatingRIPis35363.ControlSystemsTimingColorOpticalcontrolQuartzcrystalsvibrationcontrol363.ControlSystemsTiming3637OpticalThinFilmThicknessMonitoringSystems37OpticalThinFilmThickness3738Theprincipleofmonitoringthinfilmthicknessbyquartztakesadvantageoftwocharacteristics(effects)ofquartzcrystals:Piezoelectriceffect;andQualityloadingeffect.38Theprincipleofmonitoring3839AidSystemsHeating:ThemeasurementandcontroloftemperatureGaspuffing:ThemeasurementofvacuumlevelandpressurecontrolWorkrest:RevolutionandrotationofthesubjectIonicbombardment:DirectcurrentandionradiationSamplesshelf:transmission,reflection39AidSystemsHeating:Themeas3940TheOpticalPropertyofThinFilms:TransmissionReflectivityPolarizationmeasurement40TheOpticalPropertyofThin4041nPart2.RudimentsofCoatingSystems4141421.ThemeaningandcharacteristicsofvacuumVacuumisthestatusofagivenspace,inwhichairislessthanatmosphericpressure.Thethinairstatusisoftencalledavacuum.2.TechnologiesinvolvingvacuumAsthedensityofairdecreases,thephysicalpropertiesofairchanges.Itisbasedonthechangeofpropertyintheapplicationofvacuum.421.Themeaningandcharacter4243真空状真空状态气体性气体性质应用原理用原理应用概况用概况RoughVacuum105103（Pa）76010（Torr）气体状态与常压相比较只有分子数目由多变少的变化，而无气体分子空间特性的变化分子相互间碰撞频繁利用真空与大气的压力差产生的力及感差力均匀的原理实现真空的力学应用1.真空吸引和输运固体、液体、胶体和微粒；2.真空吸盘起重、真空医疗器械；3.真空成型，复制浮雕；4.真空过滤；5.真空浸渍。低真空10310-1（Pa）1010-3（Torr）气体分子间，分子与器壁间的相互碰撞不相上下，气体分子密度较小利用气体分子密度降低可实现无氧化加热利用气压降低时气体的热传导及对流逐渐消失的原理实现真空隔热和绝缘利用压强降低液体沸点也降低的原理实现真空冷冻真空干燥1.黑色金属的真空熔炼，脱气、浇铸和热处理2.真空热轧、真空表面渗铬；3.真空绝缘和真空隔热；4.真空蒸馏药物、油类及高分子化合物；5.真空冷冻、真空干燥；6.真空包装、真空充气包装；7.高速空气动力学实验中的低压风洞高真空10-110-6（Pa）10-310-8（Torr）分子间相互碰撞极少、分子与器壁间碰撞频繁气体分子密度小利用气体分子密度小任何物质与残余气体分子的化学作用徽弱的特点进行真空冶金、真空镀膜及真空器件生产1.稀有金属、超纯金属和合金、半导体材料的真空熔炼和精制；常用结构材料的真空还原冶金；2.纯金属的真空蒸馏精练；放射性同位素蒸发；3.难熔金疆的真空烧结；4.半导体材料的真空提纯和晶体制备；5.高温金相显微镜及高温材料实验设备的制造；6.真空镀膜，离子注入膜一刻蚀等表面改性真空镀膜，离子注入膜一刻蚀等表面改性；7.电真空工业的电光管、离子管、电子源管、电子束管、电子衍射仪，电子显微镜、x光显微镜，各种粒了加速器、能谱仪、核辐射谱仪，中子管、气体激光器的制造；8.电子束除气、电子束焊接，区域熔炼，电子束加超高真空10-110-6（Pa）10-110-8（Torr）气体分子密度摄低与器壁磋撞的次敌极少致使表面形成单分子层的时间增长气态空间中只有固体本身的原子几乎没有其他原子或分子的存在。利用气体分子密度极低与表面碰撞极少，表面形成单一分子层时间很长的原理实现表面物理与表面化学的研究1.可控热核聚变的研究；2.时间基准氢分子镜的制作；3.表面物理表面化学的研究；4.宇宙空间环境的模拟；5.大型同步质子加速器的运转；6.电磁悬浮式高精度陀螺仪的制作。43真空状态气体性质应用原理应用概况RoughVa4344 TheapplicationofvacuumincoatingareaVacuumcoatingtechnologyisanimportantbranchofvacuumapplication,andiswidelyappliedinoptics,electronics,energy,architecture,packaging,andscientificresearch,etc.444445MechanicalPumpMechanicalpumpisanequipmentthattakesadvantageofthemechanical&physicalprinciplestopumpouttheairofacontainer.45MechanicalPumpMechanicalpu4546464647474748484849494950505051LobePump51LobePump5152OilDiffusionPump52OilDiffusionPump5253CryocondensationPump53CryocondensationPump5354ThemeasuringtoolofvacuumlevelnVacuumgauge54Themeasuringtoolofvacuum5455555556565657Intherangeof1010-1Pa,theconnectionbetweenthethermalconductivityandatmosphericpressureisobvious.Intherangeof10-210-6Pa离子流正比与气压，这就是它的测量范围(thisrangeisthemeasuringrangeofioncurrentproportionaltoatmosphericpressure)57Intherangeof1010-1Pa,5758585859595960606061Acompletevacuumsystemconstitutethefollowings:1.Pumps2.Vacuumvalves3.Adjoiningpipeline4.Vacuumlevelmeasurementtools5.Accessories61Acompletevacuumsystemcon6162Part3.ThePrincipleandEffectofEvaporationSource62Part3.ThePrincipleandEff6263Heat-ResistantSource:ElectrifyboatsorfilamentsmadebyrefractorymetalssuchasW,Tatoheatthematerialhavebeenplacedonthem.ThisismainlytoevaporatePb,Ag,Al,Cu,Cr,Au,Nietc.63Heat-ResistantSource:6364Part4.Know-HowsofCoating64Part4.Know-HowsofCoating6465ThemicroversionofthinfilmsColumnstructuresTumors65Themicroversionofthinfi6566Theassemblingdensityofthinfilmisimportantbecauseiteffectsthefirmness,hardness,moist-resistance,scattering,andabsorptionoflightofthethinfilm.柱状结构柱状结构TheColumnStructureofThinFilm:Improvingthemicro-structureofthinfilmisoneofthemaingoalsinadvancingthetechnologiesofcoating66Theassemblingdensityofth6667Part5.CoatingProcessandFilmThicknessMonitoring67Part5.CoatingProcessand6768MethodstoMonitorThinFilmThicknessnOpticalthinfilmthicknessmonitorPassingthroughmethodReflectionmethodnQuartzthinfilmthicknessmonitor5M6M68MethodstoMonitorThinFilm6869Opticalthinfilmthicknessmonitor 透過式Via passing through the thin film69Opticalthinfilmthickness6970Opticalthinfilmthicknessmonitor 反射式Via reflecting on the thin film70Opticalthinfilmthickness7071717172OpticalThinFilmThicknessMonitoringnAdvantagesRequiresalowerstabilityofmonitoringsystems可以避免膜材折射率改變造成監控訊號變化幅度改變造成的問題。EasytodesignthemonitoringsystemsnDisadvantages無法執行極窄帶通的濾鏡監控Unabletomonitorthicknessofthinfilminaverynarrowband-pass72OpticalThinFilmThickness7273nQuartzThinFilmThicknessMonitorOscillatingcrystalsMonitoringequipments73QuartzThinFilmThickness7374Part6.OpticalKnowledgeAndCoatingProcess74Part6.OpticalKnowledgeAn7475【Spectrum】Therainbowofcolorsinvisiblelightwhenseparatedusingaprism:Visiblelightrangeisbetween770380nm,colorsincludingfromredtoviolet.Lightsbeyondcolorrediscalledinfrared,whilebeyondthecolorpurpleultraviolet,bothareinvisibletohumaneyes.75【Spectrum】7576Light rays at around 550nm is the most sensible light to human eyes,colors in yellow or green.76Lightraysataround550nmi7677Wavelength(m)Wavelength(nm)Wavenumber(cm-1)FarIF25100025000100000040010MidIF2.5252500250004000400NearIF0.782.57802500128204000Red0.620.786207801612912820Orange0.60.626006201666716129Yellow0.580.65806001724116667Green0.50.585005802000017241Blue0.440.54405002272720000Violet0.380.443804402631622727NearUV0.30.383003803333326316MidUV0.20.32003005000033333FarUV0.1850.21852005405450000VacuumUV0.010.1851018510000005405477Wavelength(m)Wavelength(nm)7778ImportantDatainOpticalThinFilmnReflectivedatanTransparencynRefractionnChromaticdispersion78ImportantDatainOpticalTh7879ReflectionandTransparencyBK7 substrateAirAir100%91.5%Air N0=N1=1BK7 substrate Ns=1.52A.O.I.=0R0s=N0-Ns2N0+Ns201S=(1-1.52)2(1+1.52)2=0.0425Rs1=Ns-N12Ns+N12(1.52-1)2(1.52+1)2=0.0425T=1-R0s-Rs1=0.9158.5%79ReflectionandTransparencyB7980RefractionN=C/VN:RefractionC:VelocityoflightinvacuumV:Velocityoflightinmedium 80RefractionN=C/V8081ChromaticDispersionThephenomenoninwhichthephasevelocityofawavelengthdependsonitsfrequency;oralternatively,whenthegroupvelocitydependsonthefrequency.Mediahavingsuchapropertyaretermeddispersivemedia.81ChromaticDispersionThephen8182TypicalCoatingsv Anti-reflective filmv Beam-splitting filmv Reflective filmv Filters82TypicalCoatingsAnti-reflec8283ARFilmPurposenIncreasesopticaltransmissionnDecreasesstrayedlightsnImprovesthequalityofimagenAddsthedistanceofeffects83ARFilmPurpose8384SingleLayerARCoating84SingleLayerARCoating8485Redline：1.38H0.61LBlueline：0.31H2.77LNH=1.7NL=1.46DoubleLayersARCoating-A85Redline：1.38H0.61LDoubleL8586DoublelayersARcoating-B86DoublelayersARcoating-B8687Three-layeredARCoating87Three-layeredARCoating8788G.25453I.06773H.0459I.10938L.05389H.08113L.21788F AirI:1.7 H:2.3 L:1.46 F:1.3888G.25453I.06773H.0459I8889Beam-SplittingFilmApplicationsincluding:Optoelectronicequipments,medicaldevices,semi-conductors,&military.89Beam-SplittingFilmApplicati8990PositionsofBeam-Splitting90PositionsofBeam-Splitting9091PrismSplitting1.NPBSNon-Polarizationbeamsplitters2.PBSPolarizationbeamsplitters91PrismSplitting1.NPBS2.PBS9192金属分光镜金属分光镜92金属分光镜9293939394949495TheComparismOfSingleZnsFilmAndFiveFilmsG/2LHLHL/Airg-K9;L-MgF2;H-Zns95TheComparismOfSingleZns9596ThePolarizationofBeam-splittingPlates96ThePolarizationofBeam-spl9697ThePolarizationofBeam-splittingPrisms97ThePolarizationofBeam-spl9798ThecurveofAlfilmon1、2、4、8、16、32、64、128nm金ReflectiveFilm98ThecurveofAlfilmon1、2、9899MetalReflectionMedium99MetalReflectionMedium99100ThingsToConsiderOnChosingMetalMaterialsqWavelengthqReflectionqEnvironmentqCostAl:CommonlyappliedinUV,VisibleandInfraredrangesAg:Highreflection,poorstabilityAu:CommonlyappliedinInfraredrange,stablePt,Rh：Stableandfirm100ThingsToConsiderOnChosi100101ComparismOnSpectrumOfAgFilm,AlFilm,andAl+lhlhFilm101ComparismOnSpectrumOfAg101102Filters102Filters102103InterferenceFilters103InterferenceFilters103104BandPassFilters0PeakWavelengthTmaxPeakTransmission2Pass-BandHalf-Width:Thewavelengthonwhichthetransmissionishalfofpeaktransmission104BandPassFilters0PeakW104105105105106106106107107107108Part7.CoatingMaterials108Part7.CoatingMaterials1081091.HighPurityOxidesSiO、HfO2、ZrO2、TiO2、TiO、SiO2、Ti2O3、Ti3O5、Ta2O5、Nb2O5、Al2O3、Sc2O3、In2O3、Pr(TiO3)2、CeO2、MgO、WO3、Sm2O3、Nd2O3、Bi2O3、Pr6O11、Sb2O3、V2O5、NiO、ZnO、Fe2O、Cr2O3、CuO、Y2O3etc.2.HighPurityFluoridesMgF2、YbF3、LaF3、DyF3、NdF3、ErF3、KF、SrF3、SmF3、NaF、BaF2CeF3etc.1091.HighPurityOxides2.High1091103.HighPurityMetals Al,Cu,Cr,Co,Ag,Pr,W,Si,Mn,Sn,V,Ti,Zr,Ni,Ta,Ir,etc.4.MixturesZrO2+TiO2,ZrO2+Ta2O5,ZrO2+Al2O3,MgO+Al2O3,In2O3+Sn2O3,etc.5.OthersBaTiO3、PrTiO3、SrTiO3、LaTiO3、ZnS、Na3AlF6、ZnSeetc.1103.HighPurityMetals4.Mi1101116.MetalTargetsSitarget、Nbtarget、Nitarget、Titarget、Zntarget、Crtarget、Mgtarget、Sntarget、Altargetect.7.CeramicTargetsITOtarget、AZOtarget、MgOtarget、SiO2target、TiO2target、Nb2O5target、MgF2targetetc.1116.MetalTargets7.Ceramic111112FAQsSpitsandstainsarecommonproblemsinthinfilmcoating,whichwillsignificantlyaffectthequalityofthethinfilmandthelens.Therearevariousfactorsthatcausethis,pleaseseethefollowing112FAQsSpitsandstainsa1121131.CommonReasonsForSpitsnThecoatingmaterialisnotpureenough,andtheimpuritiesinthematerialareevaporatedontothesubstrates;thuscreatingspits.nThecoatingmaterialismoisturized,andthushasnotbeencompletelymeltedintheprocessofcoating.nThepre-melthasnotfinishedwhenthecoatingtakesplace.nRedundantelectronicbeamcausesthematerialtospit.113CommonReasonsForSpits1131142.CommonReasonsToCauseStainsnThelensand/ortheaccessoriesarenotcleanedwell.nOnmultilayercoating,thefirstlayermaybepollutedduetoinefficientcleaning,whichcausesstainsonthelayer(s)afterwards.nThesubstratesaremoisturized,andthemoisturehasvaporizedintheheatingbeforecoatingtakesplace.nMoisturizedaccessoriesmayalsoaffectthecoating.1142.CommonReasonsToCause114115115115116116116117117117118118118119119119120120120121121121122122122123123123124124124125125125126Thankyou!126Thankyou!126 Thank you拯畏怖汾关炉烹霉躲渠早膘岸缅兰辆坐蔬光膊列板哮瞥疹傻俘源拯割宜跟三叉神经痛-治疗三叉神经痛-治疗 拯畏怖汾关炉烹霉躲渠早膘岸缅兰辆坐蔬光膊列板哮瞥疹127