模拟电路设计第2章.ppt

Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 1 Chapter 2 Basic MOS Device Physics Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 2 MOS Device Structure Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 3 NMOS and PMOS with Well Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 4 MOS Symbols Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 5 MOS Channel Formation Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 6 I/V Characteristics Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 7 I/V Characteristics Q d WC ox ( V GS V TH ) Q d ( x ) WC ox ( V GS V ( x ) V TH ) I Q d v Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 8 I/V Characteristics (cont.) I D WC ox V GS V ( x ) V TH v I D dx x 0 L WC ox n V GS V ( x ) V TH dV V 0 V D S G iv e n v E and E ( x ) dV ( x )dx I D WC ox V GS V ( x ) V TH n dV ( x ) dx I D n C ox WL ( V GS V TH ) V DS 12 V DS 2 Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 9 I/V Characteristics (cont.) I D n C ox WL ( V GS V TH ) V DS 12 V DS 2 Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 10 Operation in Triode Region I D n C ox WL ( V GS V TH ) V DS 12 V DS 2 I D n C ox WL ( V GS V TH ) V DS , V DS 2 ( V GS V TH ) R ON 1 n C ox W L ( V GS V TH ) Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 11 Operation in Active (Saturation) Region I D n C ox WL ( V GS V TH ) V DS 12 V DS 2 I D nC ox2 WL ( V GS V TH ) 2 V DS V GS V TH ( P i n c h o f f ) Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 12 Active Region (cont.) Active Region Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 13 Transconductance, gm g m I D V GS V D S c o n s ta n t n C ox WL ( V GS V TH ) g m 2 nC ox WL I D 2 IDV GS V TH Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 14 Triode and Active Region Transition Active Active Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 15 Threshold Voltage and Body Effect V TH MS 2 F Q d e pC ox , whe r e MS g a t e s ili c o n F kT q ln N s u b n i Q d e p 4 q si F N s u b Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 16 Threshold Voltage and Body Effect (cont.) V TH V TH 0 2 F V SB 2 F , 2 q si N s u bC ox No Body Effect With Body Effect Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 17 Channel Length Modulation L L L 1 / L 1L ( 1 L / L ) 1 / L 1L ( 1 V DS ), V DS L / L I D n C ox2 WL ( V GS V TH ) 2 ( 1 V DS ) L L Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 18 Channel Length Modulation (cont.) g m n C ox WL ( V GS V TH )( 1 V DS ) g m 2 nC ox W L I D ( 1 V DS ) g m 2 I DV GS V TH , ( unc hange d ) Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 19 Subthreshold Conduction I D I 0 e x p V GS kT q Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 20 MOS Layout Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 21 Device Capacitances Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 22 Layout for Low Capacitance Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 23 G-S and G-D Capacitance Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 24 MOS Small Signal Models r o V DS I D 1 I D / V DS 1 n C ox 2 W L ( V GS V TH ) 2 1 I D Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 25 Bulk Transconductance, gmb g mb I D V BS n C ox2 WL ( V GS V TH ) V TH V BS g mb g m 2 2 F V SB g m A ls o , V TH V BS V TH V SB 2 ( 2 F V SB ) 1 / 2 Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 26 Gate Resistance Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 27 MOS Small Signal Model with Capacitance Copyright The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Slides prepared by Travis N. Blalock, University of Virginia. Basic MOS Device Physics Ch. 2 # 28 C-V of NMOS